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Optical readout infrared sensor and preparation method thereof

An infrared sensor and optical readout technology, which is applied in the field of sensors, can solve the problems that the detection sensitivity and response time of the detector need to be further improved, and achieve the goal of improving radiation heat conversion efficiency and thermal deformation, low density, and improving detection sensitivity Effect

Pending Publication Date: 2019-07-23
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The microbeam double-layer material studied by Zhao Yang et al. is realized by the method of gold + silicon nitride. The detection sensitivity and response time of the detector prepared by this technology need to be further improved.

Method used

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  • Optical readout infrared sensor and preparation method thereof
  • Optical readout infrared sensor and preparation method thereof
  • Optical readout infrared sensor and preparation method thereof

Examples

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preparation example Construction

[0074] The present invention also provides a method for preparing an optical readout infrared sensor described in the above technical solution, comprising the following steps:

[0075] A) Depositing a layer of silicon oxide on a silicon substrate, and then etching part of the silicon oxide to form an array of support leg anchor points; the support leg anchor point array is composed of several support leg anchor points;

[0076] B) Deposit a layer of silicon nitride on the silicon oxide layer formed with the anchor point array of the support legs, and then etch part of the silicon nitride to obtain the support legs fixed at the anchor points of the support legs and the support Insulated beams with legs attached;

[0077] C) successively plating buffer layer and the catalyst required for growing carbon nanotubes on the heat insulating beam;

[0078] D) growing vertical carbon nanotubes on the catalyst plating position by vapor deposition, and then laying down the carbon nanotub...

Embodiment 1

[0139] Optical readout infrared sensor

[0140] A carbon nanotube-based optical readout infrared imaging sensor for acquiring and converting infrared signals such as Figure 1~2 As shown, it includes: a silicon substrate 1 and a micro-cantilever unit array fixed on the silicon substrate 1; the micro-cantilever unit array is made up of a plurality of micro-cantilever units, and each micro-cantilever unit consists of two The supporting legs 2 , two heat-insulating beams 3 and two double-material deformation beams 4 are symmetrically distributed on both sides of the heat-absorbing reflective plate 5 , and the supporting legs 2 are fixed on the silicon substrate 1 . The supporting leg 2 and the heat-insulating beam 3 are integrated, the double-material deformed beam 4 and the heat-absorbing reflector 5 are integrated, and the end of the heat-insulating beam 3 and the end of the double-material deformed beam 4 are adhered together by van der Waals force, so that Realize the connec...

Embodiment 2

[0146] Preparation method of optical readout infrared sensor

[0147] according to Figure 5 The optical readout infrared sensor of the structure described in Example 1 is prepared by the shown process flow, Figure 5 It is a schematic diagram of the preparation process of the optical readout infrared sensor provided by the embodiment of the present invention. In the figure, (1) represents the deposition of a silicon oxide film on a silicon substrate; (2) represents the etching of silicon oxide; (3) represents the deposition of nitride Silicon thin film; (4) represents the etching of silicon nitride; (5) represents the deposition catalyst, the catalyst is alumina and iron; (6) represents the growth of carbon nanotubes by water-assisted chemical vapor deposition; (7) represents the use of organic solvents Putting down the carbon nanotubes and densifying them to form an aligned carbon nanotube film; (8) means etching the carbon nanotube film; (9) means depositing a layer of met...

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Abstract

The invention belongs to the field of sensors, and especially relates to an optical readout infrared sensor and a preparation method thereof. The optical readout infrared sensor comprises a silicon substrate and a micro-cantilever beam unit array fixed on the silicon substrate; the micro-cantilever beam unit array is composed of a plurality of micro-cantilever beam units; each micro-cantilever beam unit comprises a supporting leg, a heat insulation beam, a double-material deformation beam and a heat-absorbing reflector board; and the double-material deformation beam and the heat-absorbing reflector board are composed of a carbon nanotube film layer and a gold film layer which are compounded together. A carbon nanotube has the characteristics that an axial thermal expansion coefficient of the carbon nanotube is about -11x10-6K-1 at room temperature, and the absorption rate of the infrared light of the 8 to 14mum waveband by the carbon nanotube is close to that of a black body; and whenthe carbon nanotube and the gold are combined to be applied to a double-material cantilever beam structure, the radiation thermal conversion efficiency and the thermal deformation can be improved, sothat the detection sensitivity is improved. Moreover, the density and the specific heat of the carbon nanotube are small, and the response time can be shortened.

Description

technical field [0001] The invention belongs to the field of sensors, in particular to an optical readout infrared sensor and a preparation method thereof. Background technique [0002] The infrared wavelength radiated by objects at room temperature is in the range of 8-14 μm, and the infrared sensor can obtain the radiant energy of the object and convert it into a visible image. In infrared imaging technology, the key component is the focal plane array FPA (focus-plane array). The development of FPA with high temperature sensitivity and spatial resolution is an important factor to promote the development of infrared imaging technology. [0003] Infrared imaging technology is mainly divided into two categories: photon type (cooling type) and thermal type (non-cooling type). In the cooling infrared imaging device based on the photoelectric effect, the temperature of the detector target surface must be cooled to a low temperature (about 77K), the noise equivalent temperature ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20
CPCG01J5/20G01J2005/204
Inventor 赵旸张鹏郭建侯虎旺陈烈
Owner UNIV OF SCI & TECH OF CHINA