A kind of high-temperature-resistant high-entropy alloy nbmotawv thin film and preparation method thereof

A high-entropy alloy, high-temperature-resistant technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of high cost, high stress of bulk material, high preparation temperature, and achieve smooth surface, resistance to resistance. The effect of large value change range and good resistivity stability

Active Publication Date: 2021-01-05
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: to solve the problems of high preparation temperature, large bulk material stress and high cost in the traditional preparation method of refractory high-entropy alloy

Method used

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  • A kind of high-temperature-resistant high-entropy alloy nbmotawv thin film and preparation method thereof
  • A kind of high-temperature-resistant high-entropy alloy nbmotawv thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Embodiment 1: Preparation of NbMoTaWV by radio frequency magnetron sputtering method 0.62 film

[0023] (1) Preparation of alloy sputtering target

[0024] Preparation of alloy target: according to Nb:Mo:Ta:W atomic percentage 1:1:1:1, the mass of each metal component is weighed and smelted into a target with a purity of 99.9%; The main sputtering area of ​​the elemental target is prepared into a five-element combined alloy target;

[0025] (2) Preparation of high-temperature resistant NbMoTaWV high-entropy alloy thin films

[0026] Cleaning the substrate: select a single crystal Si substrate, ultrasonically clean it with alcohol, ethanol and deionized water in sequence (10 minutes each), and then put the single crystal silicon wafer in a 5% hydrofluoric acid solution for 2 to 3 minutes, Rinse with deionized water and rinse with N 2 Blow dry and put in vacuum chamber;

[0027] Film preparation by magnetron sputtering: vacuum to 3.0×10 -4 Below Pa, fill high-purity...

Embodiment 2

[0032] Example 2: Preparation of NbMoTaW by magnetron sputtering 1.19 V 1.51 film

[0033] The preparation process is the same as in Example 1, only the number of V sheets is increased, and the film characterization method is the same as in Example 1. The composition of the obtained film is NbMoTaWV 1.51 , the film thickness is 460nm, the hardness is 11.20Gpa, and the resistivity at room temperature is 80.05 . figure 2 The resistivity-temperature curve under this composition is shown, and the resistivity can also remain constant from room temperature to 600°C, showing the excellent high temperature resistance of the film. The high-temperature-resistant high-entropy alloy NbMoTaWV thin film can be used for microelectronic device materials, high-temperature-resistant materials and high-hardness and wear-resistant materials.

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Abstract

The invention provides a high-temperature-resistant high-entropy alloy NbMoTaWV film and a preparation method thereof, and belongs to the technical field of high-entropy alloys and high temperature resistance. The film has the following general formula: NbMoTaWV<x>, x is equal to 0 to 2, the ratio of Nb:Mo:Ta:W:V is close to 1:1:1:1:x, and the film is in a nano columnar crystal form and of a single phase BCC structure. The film which is uniform, dense and flat in surface can be prepared through a radio frequency magnetron sputtering method. The performance of the film is adjusted by changing the content of V, the resistivity can be continuously changed within the range of 45-100.0 [mu]omega.cm, the excellent stability is achieved, and the resistivity can be kept constant within the range from the room temperature to 600 DEG C; and the hardness is continuously changed within the range of 7-15 Gpa. The film is excellent in high-temperature resistance, the adjustable range of the performance is large, the application filed of the film is expanded, and the film can be applied to the fields of microelectronic devices, high-temperature resisting materials, high-harness and abrasion-resistance and the like.

Description

technical field [0001] The invention relates to a high-temperature-resistant high-entropy alloy NbMoTaWV thin film and a preparation method thereof, belonging to the technical fields of high-entropy alloys and high-temperature resistance. Background technique [0002] High-entropy alloys proposed in the 1990s have the following advantages over traditional alloys: First, each element in high-entropy alloys is the main element, and the atomic percentage can be evenly distributed, and the properties of the alloy are determined by its constituent elements; It is the mixing of various elements in high entropy that will produce different degrees of high entropy effects, causing the alloy to tend to form a solid solution with a single structure, greatly reducing the possibility of intermetallic compounds, and having better performance. The third is that the structure and properties of high-entropy alloys are highly sensitive to changes in element content, and the properties of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/02C22C30/00
CPCC22C30/00C23C14/021C23C14/165C23C14/35
Inventor 李晓娜毕林霞利助民王清
Owner DALIAN UNIV OF TECH
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