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Diffusion Method of Monocrystalline Silicon-Based Inverted Pyramid Texture-Like Structure

An inverted pyramid and diffusion method technology, applied in the field of solar cells, can solve problems such as unsatisfactory diffusion effect, and achieve the effect of short processing time and increased production cost

Active Publication Date: 2021-08-17
SUZHOU TALESUN SOLAR TECH CO LTD
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  • Abstract
  • Description
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Problems solved by technology

Under the same diffusion process method, the diffusion resistance will be affected by the surface condition of the silicon wafer, and the diffusion effect is not ideal

Method used

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  • Diffusion Method of Monocrystalline Silicon-Based Inverted Pyramid Texture-Like Structure

Examples

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specific example 1

[0057] The key idea of ​​the design of the present invention is: there are three step-by-step source-through deposition steps, and the deposition temperature of each step is gradually increased by about 10°C; the deposition time is gradually decreased from the first step to the third step. The push temperature is 35-50°C higher than the temperature of the first step of via deposition. The cooling step after the phosphorus source is advanced is divided into two steps or not limited to two-step buffer cooling.

[0058] Put the silicon wafer with an inverted pyramid-like structure into a diffusion furnace for step-by-step diffusion; step-by-step diffusion includes phosphorus source deposition under the condition of sequentially increasing temperature and at least two gradient cooling procedures as shown in the table below.

[0059]

[0060] Compared with the diffusion process of the existing positive pyramid textured battery, the present invention has the following beneficial ...

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Abstract

The invention provides a diffusion method of a monocrystalline silicon-based inverted pyramid suede structure, comprising: using a P-type monocrystalline silicon wafer as a monocrystalline silicon substrate, performing anisotropic etching on the front surface of the monocrystalline silicon substrate, A uniformly distributed inverted pyramid-like structure is obtained; the silicon chip with the inverted pyramid-like structure is placed in a diffusion furnace for step-by-step diffusion; the step-by-step diffusion includes phosphorus source deposition under the condition of sequentially increasing temperature and at least two Gradient cooling program. The design of the three-step orderly deposition of the present invention is conducive to the sufficient and uniform deposition of the phosphorus source on the surface of the silicon wafer; Layer", the diffusion square resistance obtained by applying this method is an ideal square resistance value, and the uniformity is good.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a diffusion method for a monocrystalline silicon-based inverted pyramid textured structure. Background technique [0002] The traditional monocrystalline silicon solar cell technology scheme is based on monocrystalline silicon, with a pyramid structure etched on the front, and the pyramid is covered with a PECVD-SiNx (x is a positive number) passivation film, and the front and back are screen-printed with silver and aluminum paste. And the back electrode, through the sintering process, realize the front ohmic contact and the aluminum back field; the disadvantage of this technical solution is that the spectral response of the battery device in the short wave band (300-450nm) and long wave band (900-1100nm) is not high, the main reason is The anti-reflection ability of the front pyramid structure is average, resulting in low external quantum efficiency in the short-wave band, and the sur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/225
CPCH01L21/2252H01L21/2256H01L31/1804Y02P70/50
Inventor 霍亭亭赵保星魏青竹倪志春连维飞苗凤秀胡党平
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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