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Interference photoetching system, printing apparatus, and interference photoetching method

A technology of interference lithography and printing devices, which is applied in the field of interference lithography, can solve the problems of complex optical path construction, complex structure, and large structure, and achieve the effect of low production cost, simple structure, and variable-period interference lithography

Active Publication Date: 2019-08-13
SVG TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the traditional holographic interference exposure technology, a periodic structure needs to build an optical path, and for a two-dimensional periodic micro-nano structure, it needs more than three beams of light to realize the interference optical path, and the optical path of more than three beams of light is on the holographic platform. more complex to build
In Chinese patent CN102236267A, a multi-beam multi-angle interference lithography system is disclosed, which is realized by combining mirrors on multiple mechanical arms, and its structure is huge and complicated

Method used

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  • Interference photoetching system, printing apparatus, and interference photoetching method
  • Interference photoetching system, printing apparatus, and interference photoetching method
  • Interference photoetching system, printing apparatus, and interference photoetching method

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no. 1 example

[0033] figure 1 is a structural schematic diagram of the interference lithography system of the present invention. Such as figure 1 As shown, the interference lithography system 10 includes a phase element 11 a, a light blocking diaphragm 12 a, a first lens 13 , a second lens 14 , a third lens 15 , a fourth lens 16 and an axicon lens group 17 .

[0034] The phase element 11a, the first lens 13, the light-blocking diaphragm 12a, the second lens 14, the third lens 15, and the fourth lens 16 are arranged in sequence along the propagation direction of the optical axis 101, and the first lens 13 and the second lens 14 form a A group of 4F imaging systems, the third lens 15 and the fourth lens 16 form another group of 4F imaging systems, and the axicon lens group 17 is movably arranged between the third lens 15 and the fourth lens 16 along the propagation direction of the optical axis 101 . The phase element 11a is used to split the light beam, and the phase element 11a is a light...

no. 2 example

[0045] Figure 5 It is a schematic diagram of the partial structure of the phase element of the second embodiment of the present invention. Figure 6 It is a structural schematic diagram of the light-blocking diaphragm of the second embodiment of the present invention. Such as Figure 5 and Figure 6 As shown, the structure of the interference lithography system 10 of this embodiment is substantially the same as that of the interference lithography system 10 of the first embodiment, except that the interference lithography system 10 of this embodiment is used to realize multi-beam, multi-angle, variable Periodic interference lithography.

[0046] Such as Figure 5 and Figure 6 As shown, by changing the structural design of the phase element 11b and the light-blocking diaphragm 12b, multi-beam interference lithography can be realized. Specifically, the phase element 11b is provided with a plurality of hexagonal periodic structures 112 arranged in an array, and the light ...

no. 3 example

[0048] Figure 7 is a schematic structural diagram of a printing device according to a third embodiment of the present invention. Such as Figure 7 As shown, the printing device 100 includes the above-mentioned interference lithography system 10, a laser source 20, a beam shaper 30, a beam splitter 40a, a half mirror 40b, a detection optical path 50a, an autofocus optical path 50b, a miniature objective lens 60, and a translation stage 70, controller 80 and computer 90. In this embodiment, a beam shaper 30, a beam splitter 40a, a half mirror 40b, a miniature objective lens 60, and a translation stage 70 are sequentially arranged along the propagation direction of the laser light, wherein the detection optical path 50a is arranged on the transmitted light of the beam splitter 40a. On the way, the autofocus optical path 50b is set on the reflection optical path of the half mirror 40b.

[0049] The laser light emitted by the laser source 20 passes through the beam shaper 30 to...

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Abstract

The invention provides an interference photoetching system which comprises a phase element, a first lens, a second lens, a third lens, a fourth lens and a conical lens group. The phase element, the first lens, the second lens, the third lens and the fourth lens are sequentially arranged in the optical axis propagation direction. The first lens and the second lens form one group of 4F imaging system, the third lens and the fourth lens form another group of 4F imaging system, and the conical lens set is movably arranged between the third lens and the fourth lens in the optical axis propagation direction. The interference photoetching system disclosed by the invention is simple in structure, and low in manufacturing cost and multi-angle and variable-period interference photoetching can be achieved. The invention also relates to a printing device and an interference photoetching method.

Description

technical field [0001] The invention relates to the technical field of interference lithography, in particular to an interference lithography system, a printing device and an interference lithography method. Background technique [0002] As an emerging technology, surface periodic micro-nano structure has excellent application prospects in many fields, such as optical anti-reflection, waterproof self-cleaning, sapphire patterned substrate, holographic waveguide, holographic 3D display, etc. [0003] The methods currently used to manufacture surface micro-nano structures include electron beam direct writing, nanoimprinting, high-end miniature projection exposure machine (stepper scanner) and holographic interference exposure. However, electron beam direct writing equipment and high-end miniature projection exposure machine equipment are very expensive, and the production investment is relatively large. Nanoimprint technology molds are expensive, and the problem of defective ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/2051G03F7/70408G03F7/70991
Inventor 袁晓峰吕帅朱鹏飞邵仁锦朱鸣浦东林
Owner SVG TECH GRP CO LTD
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