A kind of production method of silicon carbide inorganic ceramic film

An inorganic ceramic membrane and production method technology, applied in chemical instruments and methods, membrane, membrane technology, etc., can solve the problems of high production cost, high processing and molding temperature, hindering market operation, etc., and achieve strong anti-pollution ability, The effect of high mechanical strength and reduction of overall production cost

Active Publication Date: 2022-06-28
HUBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, silicon carbide inorganic ceramic membranes are limited by the high cost of raw materials and the high processing temperature of 2800°C. The production cost has been high, which greatly hinders its market operation.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Hydrogen etching on the surface of silicon carbide powder:

[0025] Use 100μm silicon carbide powder to spread out evenly to form a thin layer. In a vacuum environment, use hydrogen at a flow rate of 30L / min to carry out hydrogen etching on the surface of silicon carbide powder to form a step array morphology with atomic level flatness. s surface. The etching process is firstly etched at 1100°C for 30min, and then heated to 1300°C for 50min.

[0026] 2) Generate graphene thin layer on the surface of silicon carbide powder:

[0027] After the hydrogen etching on the surface of the silicon carbide powder is completed, the thermal fracture of the carbon-silicon bond is completed under the condition of vacuum protection, so that the silicon atoms on the surface of the silicon carbide powder sublime before the carbon atoms and desorb from the surface, and the carbon atoms enriched on the surface occur. Reconstruction to form a hexagonal honeycomb graphene film. The tem...

Embodiment 2

[0038] 1) Hydrogen etching on the surface of silicon carbide powder:

[0039] Use 30μm silicon carbide powder to spread out evenly to form a thin layer. In a vacuum environment, use hydrogen at a flow rate of 10L / min to carry out hydrogen etching on the surface of silicon carbide powder to form a step array morphology with atomic level flatness. s surface. The etching process is to etch at 1000°C for 30 minutes first, then raise the temperature to 1150°C for 30 minutes, and finally raise the temperature to 1300°C for 40 minutes.

[0040] 2) Generate graphene thin layer on the surface of silicon carbide powder:

[0041]After the hydrogen etching on the surface of the silicon carbide powder is completed, the thermal fracture of the carbon-silicon bond is completed under the protection of argon, so that the silicon atoms on the surface of the silicon carbide powder are sublimated before the carbon atoms and desorbed from the surface, while the carbon atoms enriched on the surfac...

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Abstract

The invention relates to a method for producing a silicon carbide inorganic ceramic film, comprising the following steps: (1) performing hydrogen etching on the surface of silicon carbide powder; (2) generating a graphene thin layer on the surface of silicon carbide powder; (3) forming (4) Swell the generated graphene oxide; (5) Plasticity of silicon carbide powder; (6) Reduction solidification of silicon carbide. The method is based on the silicon carbide epitaxial growth graphene technology, and provides an innovative silicon carbide inorganic ceramic film production process and method. The silicon carbide inorganic ceramic membrane prepared by the method has small filter pore size, high pore size distribution precision, good mechanical strength of the membrane body, and high flexural strength.

Description

technical field [0001] The invention relates to a method for producing a silicon carbide inorganic ceramic film, in particular to an innovative production process and method for a silicon carbide inorganic ceramic film based on the epitaxial growth of graphene on silicon carbide. Background technique [0002] Inorganic ceramic membrane is a unique type of separation membrane, with excellent stability, including high temperature resistance, chemical solvent resistance, strong anti-pollution ability; high mechanical strength, suitable for separation of high viscosity, high solid content and complex fluid materials ; Inorganic ceramic membranes have a narrow pore size distribution, and cross-flow filtration can significantly improve the separation efficiency of specific molecular weights; the service life of inorganic ceramic membranes is 3 to 5 times that of organic membranes. [0003] With the advancement of science and technology in recent years, the materials and manufactur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01D67/00B01D71/02B01D69/02C04B35/565C04B35/628C04B35/622
CPCB01D67/0039B01D71/02B01D69/02C04B35/565C04B35/62834C04B35/62218B01D2325/22B01D2325/30B01D2325/24C04B2235/96
Inventor 万端极谢逾群刘德富李猷徐国念李祝常锋毅汪淑廉梅洪葛红梅
Owner HUBEI UNIV OF TECH
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