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Method for preparing manganese-doped holmium ferrite HoMnxFe1-xO3 magnetoelectric material

A technology of homnxfe1-xo3 and magnetoelectric materials, applied in the field of magnetic memory materials, can solve the problems of affecting material performance, difficulty in controlling the growth and agglomeration of product particles, and high cost, and achieve the effect of shortening the reaction time and superior magnetoelectric properties

Active Publication Date: 2019-08-16
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its problems are: since the reaction is a solid phase migration and diffusion process, it can only be carried out at a very high reaction temperature, and repeated sintering is required, so the preparation process is complicated and the cost is high. At the same time, the growth and agglomeration of product particles are difficult to control, and the Inhomogeneity, wide range of particle size distribution, and irregular crystal form, all of which seriously affect the performance of the material

Method used

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  • Method for preparing manganese-doped holmium ferrite HoMnxFe1-xO3 magnetoelectric material
  • Method for preparing manganese-doped holmium ferrite HoMnxFe1-xO3 magnetoelectric material
  • Method for preparing manganese-doped holmium ferrite HoMnxFe1-xO3 magnetoelectric material

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preparation example Construction

[0040] The invention discloses a simple and efficient method for preparing manganese-doped holmium ferrite HoMn x Fe 1-x o 3 A method for preparing a magnetoelectric material, comprising the steps of:

[0041] Step 1: According to the HoMn to be prepared x Fe 1-x o 3 The mass ratio of each element in the material and the total preparation amount are calculated to calculate the mass of each element, and the mass of each raw material is calculated according to the mass of each raw material and the element content in holmium-containing compounds, iron-containing compounds and manganese-containing compounds. Calculate the total mass of each raw material required, weigh the holmium-containing compound, iron-containing compound and manganese-containing compound according to the calculated total mass of each raw material, and configure the above-mentioned compounds as a standard solution.

[0042] Holmium-containing compounds can be Ho(NO 3 ) 3 ·6H 2 O or Ho 2 (SO 4 ) 3 ·8...

Embodiment 1

[0058] Manganese-doped holmium ferrite magnetoelectric material HoMn prepared by the method of the invention 0.2 Fe 0.8 o 3 , which in turn includes the following steps:

[0059] First, prepare the standard solution Ho(NO 3 ) 3 , MnCl 2 and Fe(NO 3 ) 3 The concentrations are 0.2M, 0.1M, 0.1M; then, measure 5mL Ho(NO 3 ) 3 (0.2M), 2mL MnCl 2 (0.1M) and 8mL Fe(NO 3 ) 3 (0.1M), magnetically stir the above standard solution in a 25mL beaker, slowly add 18g solid KOH while stirring, the stirring should be fast, specifically set at 600r / min, until the final mixture is cooled to room temperature.

[0060] Then, move the mixture into a p-polystyrene-lined hydrothermal reactor with a filling degree of 80%, and conduct a hydrothermal reaction at 200°C for 1 day, then put the reactor into cold water at 25°C to rapidly cool down, The obtained product was washed 4 times with deionized water, then washed 4 times with absolute ethanol, and finally dried at 80°C to obtain HoMn 0....

Embodiment 2

[0062] Manganese-doped holmium ferrite magnetoelectric material HoMn prepared by the method of the invention 0.4 Fe 0.6 o 3 , which in turn includes the following steps:

[0063] First, prepare the standard solution Ho(NO 3 ) 3 , Mn(NO 3 ) 2 and FeCl3 The concentrations are 0.2M, 0.1M, 0.1M; then, measure 5mL Ho(NO 3 ) 3 (0.2M), 4mL Mn(NO 3 ) 2 (0.1M) and 6mL FeCl 3 (0.1M), magnetically stir the above standard solution in a 25mL beaker, slowly add 18g solid KOH while stirring, the stirring should be fast, specifically set at 600r / min, until the final mixture is cooled to room temperature. Then, the mixture was moved into a p-polystyrene-lined hydrothermal reactor with a filling degree of 74%, and hydrothermally reacted at 260°C for 3 days, and the reactor was placed in cold water at 28°C to rapidly cool it down. The obtained product was washed 4 times with deionized water, then washed 4 times with absolute ethanol, and finally dried at 80°C to obtain HoMn 0.4 Fe 0...

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Abstract

The invention discloses a method for preparing a manganese-doped holmium ferrite HoMnxFe1-xO3 magnetoelectric material. The method comprises a step of taking a holmium-containing compound, an iron-containing compound and a manganese-containing compound and respectively preparing a holmium-containing standard solution, an iron-containing standard solution and a manganese-containing standard solution, uniformly mixing the holmium-containing solution, the iron-containing solution and the manganese-containing solution under magnetic stirring to obtain a first mixed solution, adding a solid KOH with same mass of the first mixed solution into the first mixed solution at room temperature, and fully dissolving and cooling to room temperature to obtain a second mixed solution, a step of transferring the second mixed solution into a hydrothermal reaction vessel of a polyphenylene lining, placing a hydrothermal reaction kettle in a reaction furnace, heating to 200 to 260 DEG C, after 1 to 4 daysof heat preservation, cooling the hydrothermal reaction vessel to obtain a first product, and washing and drying the first product to obtain the HoMnxFe1-xO3 magnetoelectric material. The material canbe prepared in one time at the low temperature, the product has uniform particles and regular crystal form, and the disadvantages of high time consumption and high energy consumption of a solid phasemethod are overcome.

Description

[0001] 【Technical field】 [0002] The invention belongs to the field of magnetic memory materials, in particular to a manganese-doped holmium ferrite HoMn x Fe 1-x o 3 Preparation methods of magnetoelectric materials. [0003] 【Background technique】 [0004] The performance of magnetic memory mainly depends on the magnetoelectric effect of magnetoelectric materials, HoMn x Fe 1-x o 3 As magnetoelectric materials with excellent magnetoelectric effect, they show extremely sensitive magnetization effect under an applied electric field. This allows the magnetism to be tuned at extremely small electric fields, so the magnetic response to electric fields is crucial when designing memory elements. [0005] The solid-phase method is currently the main method for preparing rare earth composite oxide magnetic materials. The reaction mechanism of the solid-state reaction is a thermodynamic diffusion process. The reactants of the traditional solid-phase method need to undergo solid-p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/10H10N50/01
CPCH10N50/01H10N50/85
Inventor 郑德山郭峰王喜锋杨巍李书典
Owner XIAN TECHNOLOGICAL UNIV