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A kind of mid-wave infrared anti-reflection film on silicon substrate and preparation method thereof

A technology of infrared anti-reflection coating and silicon substrate, which is applied in optical components, instruments, optics, etc., can solve the problems of unsuitability and low transmittance of anti-reflection coating, reduce reflection loss, enhance signal strength, and improve detector The effect of response

Active Publication Date: 2021-03-23
上海欧菲尔光电技术有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the 3~5μm anti-reflection coating used for infrared thermal imaging has low transmittance, which is no longer suitable for the needs of the market.

Method used

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  • A kind of mid-wave infrared anti-reflection film on silicon substrate and preparation method thereof
  • A kind of mid-wave infrared anti-reflection film on silicon substrate and preparation method thereof
  • A kind of mid-wave infrared anti-reflection film on silicon substrate and preparation method thereof

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Embodiment Construction

[0018] The specific embodiment of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0019] see figure 1 , the mid-wave infrared anti-reflection coating of the present invention includes a silicon substrate and optical films on both sides. In the figure (1) is the front film system, (2) is the silicon substrate, and (3) is the back film system.

[0020] The spectral anti-reflection area of ​​the mid-wave infrared anti-reflection coating of the present invention is 3-5 μm. Select suitable optical thin film materials in the required spectral range, Ge as high refractive index coating materials, ZnS and YbF3 as low refractive index coating materials.

[0021] The mid-wave infrared anti-reflection film of the present invention adopts a multi-layer irregular film structure. The coating process uses a quartz crystal oscillator to monitor the material deposition thickness in real time. The central wavelength is selected...

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Abstract

The invention discloses a medium-wave infrared antireflection film on a silicon substrate. The antireflection film uses germanium (Ge) as a high-refractive-index coating material, and uses zinc sulfide (ZnS) and ytterbium fluoride (YbF3) as low-refractive-index coating materials; optical film plating is performed by using a PVD method; and by adopting ion source assisted deposition and specific material evaporation process conditions, 5 irregular film layers are deposited on the two surfaces of the substrate. The antireflection film can enable a silicon window to have an excellent light-transmitting effect within a wavelength range of 3-5 microns, and the average transmittance is greater than 98%. The optical efficiency of an uncooled infrared focal plane detector can be effectively improved, and the imaging quality of an infrared thermal imager is improved. The substrate is a silicon wafer and therefore can be applied to a wafer-level optical packaging window.

Description

technical field [0001] The invention relates to an infrared optical coating technology, and specifically refers to an anti-reflection coating based on monocrystalline silicon that can increase the transmittance of infrared light in the range of 3-5 μm. Background technique [0002] Anti-reflection coating is also called anti-reflection coating. In optical components, light energy is lost due to the reflection of the surface of the component. transparent effect. Infrared AR coatings play an important role in both civilian and military applications. In terms of civil use, it is mainly used in the optical lens of infrared detectors, which can be used in various fields such as object temperature measurement, medical diagnosis, security monitoring, electrical fault detection, and fire protection. In the military, the main application bands are 1~3μm, 3~5μm, 8~12μm, which are used for infrared guidance technology. [0003] Infrared detectors can convert optical signals into ele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/115
CPCG02B1/115
Inventor 赵中亮
Owner 上海欧菲尔光电技术有限公司
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