Field emission cathode structure with current limiting resistive switching layer and preparation method thereof

A field emission cathode and resistive layer technology, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve problems such as device damage and cathode gate short circuit, and achieve low manufacturing cost and performance improvement. , the effect of improving launch stability

Active Publication Date: 2019-08-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the problems faced by the field emission cathode current-limiting structure design in the prior art, and provides a field emission cathode structure with a flow-limiting resistance variable layer, which is simple to prepare and low in cost, and through the simple field emission current-limiting structure, It can solve the problem of device damage caused by cathode-grid short circuit or over-current emission caused by uneven emission current density in the field emission array cathode, and improve the stability of the cathode

Method used

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  • Field emission cathode structure with current limiting resistive switching layer and preparation method thereof
  • Field emission cathode structure with current limiting resistive switching layer and preparation method thereof
  • Field emission cathode structure with current limiting resistive switching layer and preparation method thereof

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Embodiment 1

[0032] This embodiment provides a method for preparing a field emission cathode with a flow-limiting resistive layer, comprising the following steps:

[0033] Step A: Wafer Selection and Cleaning

[0034] In this embodiment, P-type lightly doped silicon wafers are selected, the resistivity is about 3-25Ω / cm-3, and the crystal orientation is 100. Use deionized water, ethanol, acetone, SC-1, SC-2, and deionized water in sequence. ultrasonic cleaning;

[0035] Step B: Fabrication of Spindt Field Emission Cavity Structure

[0036] The insulating layer is made by the oxidation process, and then the metal gate is made by the sputtering coating process, and then the array pattern is made by the photolithography process and the cavity structure is made by the etching process;

[0037] Step C: Preparing the resistive layer of the metal ion-doped memristive material

[0038] First deposit a silicon oxide layer (SiOx) in the cavity, and then use a sputtering coating process to coat a ...

Embodiment 2

[0045] This embodiment provides a method for preparing a field emission cathode with a flow-limiting resistive layer, comprising the following steps:

[0046] Step A: Wafer Selection and Cleaning

[0047] In this embodiment, P-type lightly doped silicon wafers are selected, the resistivity is about 3-25Ω / cm-3, and the crystal orientation is 100. Use deionized water, ethanol, acetone, SC-1, SC-2, and deionized water in sequence. ultrasonic cleaning;

[0048] Step B: Fabrication of Spindt Field Emission Cavity Structure

[0049] The insulating layer is made by the oxidation process, and then the metal gate is made by the sputtering coating process, and then the array pattern is made by the photolithography process and the cavity structure is made by the etching process;

[0050] Step C: Preparing the resistive layer of the metal ion-doped memristive material

[0051] First deposit a titanium oxide layer (TiOx) in the cavity, and then use a sputtering coating process to coat a...

Embodiment 3

[0057] This embodiment provides a method for preparing a field emission cathode with a flow-limiting resistive layer, comprising the following steps:

[0058] Step A: Wafer Selection and Cleaning

[0059] In this embodiment, P-type lightly doped silicon wafers are selected, the resistivity is about 3-25Ω / cm-3, and the crystal orientation is 100. Use deionized water, ethanol, acetone, SC-1, SC-2, and deionized water in sequence. ultrasonic cleaning;

[0060] Step B: Fabrication of Spindt Field Emission Cavity Structure

[0061] The insulating layer is made by the oxidation process, and then the metal gate is made by the sputtering coating process, and then the array pattern is made by the photolithography process and the cavity structure is made by the etching process;

[0062] Step C: Preparing the resistive layer of the metal ion-doped memristive material

[0063] First, a LaMnO3 layer (LMO) is deposited in the cavity, and then a copper film is deposited on the LaMnO3 laye...

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Abstract

The invention relates to a field emission cathode structure with a current limiting resistive switching layer and a preparation method thereof, which belong to the technical field of field electron emission. A composite memristor material doped with metal ions is used as a resistive switching layer between each cathode emitter and a substrate in a field emission array cathode, and the resistive switching layer under each cathode emitter controls the migration of metal ions in the resistive switching layer by its own current change. The resistive switching layer is in a low-resistance state during normal emission of the cathode emitter. Under short-circuit or over-current emission, the resistive switching layer is switched to a high-resistance state. The different cathode emitters do not affect one another, and the maximum emission current of a single cathode emitter can be limited to restrain short-circuit or over-current emission. The field emission current limiting structure providedby the invention is simpler than the existing current limiting structure, and has low preparation cost. Because of the existence of the resistive switching layer, the emission stability of the fieldemission cathode is improved without affecting the field emission characteristic, and the field emission cathode structure is of great significance for improving the performance of the existing fieldemission cathode.

Description

technical field [0001] The invention belongs to the technical field of field electron emission, and in particular relates to a field emission cathode structure with a flow-limiting resistance variable layer and a preparation method thereof. Background technique [0002] Field emission cathode has many advantages such as room temperature operation, fast start-up, low power consumption, high emission current density, etc., and it is a research hotspot of cathode electron source at home and abroad. Field emission cathode array (Field emission array, FEA), or Spindt cathode, is the core component of vacuum field emission microelectronic devices. The traditional Spindt cathode field emission cathode structure is a microtip electron gun array processed by micro-nano technology. The array unit is a cathode-grid component, that is, each unit is composed of a metal-tipped emitter grown on the emitter and a gate hole, and an insulating layer is set between the gate and the emitter. Ad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02
CPCH01J1/3042H01J9/025
Inventor 王小菊查林宏祁康成曹贵川林祖伦雷李杨霞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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