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A field emission cathode structure with a flow-limiting resistance variable layer and its preparation method

A field emission cathode and resistive layer technology, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve problems such as device damage and cathode-grid short circuit, and achieve low manufacturing cost and performance improvement , Improve the effect of launch stability

Active Publication Date: 2020-05-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the problems faced by the field emission cathode current-limiting structure design in the prior art, and provides a field emission cathode structure with a flow-limiting resistance variable layer, which is simple to prepare and low in cost, and through the simple field emission current-limiting structure, It can solve the problem of device damage caused by cathode-grid short circuit or over-current emission caused by uneven emission current density in the field emission array cathode, and improve the stability of the cathode

Method used

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  • A field emission cathode structure with a flow-limiting resistance variable layer and its preparation method
  • A field emission cathode structure with a flow-limiting resistance variable layer and its preparation method
  • A field emission cathode structure with a flow-limiting resistance variable layer and its preparation method

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Embodiment 1

[0032] This embodiment provides a method for preparing a field emission cathode with a flow-limiting resistive layer, comprising the following steps:

[0033] Step A: Wafer Selection and Cleaning

[0034] In this embodiment, P-type lightly doped silicon wafers are selected, and the resistivity is about 3-25Ω / cm -3 , the crystal orientation is 100, using deionized water, ethanol, acetone, SC-1, SC-2, deionized water for ultrasonic cleaning in sequence;

[0035] Step B: Fabrication of Spindt Field Emission Cavity Structure

[0036] The insulating layer is made by the oxidation process, and then the metal gate is made by the sputtering coating process, and then the array pattern is made by the photolithography process and the cavity structure is made by the etching process;

[0037] Step C: Preparing the resistive layer of the metal ion-doped memristive material

[0038] First, a silicon oxide layer (SiO x), and then use sputtering coating process to coat silver film on the s...

Embodiment 2

[0045] This embodiment provides a method for preparing a field emission cathode with a flow-limiting resistive layer, comprising the following steps:

[0046] Step A: Wafer Selection and Cleaning

[0047] In this embodiment, P-type lightly doped silicon wafers are selected, and the resistivity is about 3-25Ω / cm -3 , the crystal orientation is 100, using deionized water, ethanol, acetone, SC-1, SC-2, deionized water for ultrasonic cleaning in sequence;

[0048] Step B: Fabrication of Spindt Field Emission Cavity Structure

[0049] The insulating layer is made by the oxidation process, and then the metal gate is made by the sputtering coating process, and then the array pattern is made by the photolithography process and the cavity structure is made by the etching process;

[0050] Step C: Preparing the resistive layer of the metal ion-doped memristive material

[0051] First, a titanium oxide layer (TiO x ), and then use sputtering coating process to plate silver film on th...

Embodiment 3

[0057] This embodiment provides a method for preparing a field emission cathode with a flow-limiting resistive layer, comprising the following steps:

[0058] Step A: Wafer Selection and Cleaning

[0059] In this embodiment, P-type lightly doped silicon wafers are selected, and the resistivity is about 3-25Ω / cm -3 , the crystal orientation is 100, using deionized water, ethanol, acetone, SC-1, SC-2, deionized water for ultrasonic cleaning in sequence;

[0060] Step B: Fabrication of Spindt Field Emission Cavity Structure

[0061] The insulating layer is made by the oxidation process, and then the metal gate is made by the sputtering coating process, and then the array pattern is made by the photolithography process and the cavity structure is made by the etching process;

[0062] Step C: Preparing the resistive layer of the metal ion-doped memristive material

[0063] First, a LaMnO3 layer (LMO) is deposited in the cavity, and then a copper film is deposited on the LaMnO3 l...

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Abstract

A field emission cathode structure with a flow-limiting resistance variable layer and a preparation method thereof belong to the technical field of field electron emission. In the present invention, a composite memristive material doped with metal ions is used as a resistive layer between each cathode emitter and the substrate in the field emission array cathode, so that the resistive layer under each cathode emitter is controlled by its own current change Metal ions migrate in the resistive layer to realize the resistive function. When emitting normally, it is in a low-resistance state; when short-circuit or over-current emitting, the resistive layer switches to a high-resistance state, and different cathode emitters do not affect each other, so that This limits the maximum emission current of a single cathode emitter, suppressing short circuit or over current emission. Compared with the existing current limiting structure, the field emission current limiting structure provided by the present invention is simpler and lower in preparation cost, and due to the presence of the resistive layer, it effectively improves the stability of the field emission cathode emission without affecting the field emission characteristics , which is of great significance to the improvement of the performance of the existing field emission cathode.

Description

technical field [0001] The invention belongs to the technical field of field electron emission, and in particular relates to a field emission cathode structure with a flow-limiting resistance variable layer and a preparation method thereof. Background technique [0002] Field emission cathode has many advantages such as room temperature operation, fast start-up, low power consumption, high emission current density, etc., and it is a research hotspot of cathode electron source at home and abroad. Field emission cathode array (Field emission array, FEA), or Spindt cathode, is the core component of vacuum field emission microelectronic devices. The traditional Spindt cathode field emission cathode structure is a micro-tip electron gun array processed by micro-nano technology. The array unit is a cathode-grid component, that is, each unit is composed of a metal-tipped emitter grown on the emitter and a grid hole. , an insulating layer is set between the gate and the emitter. W...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304H01J9/02
CPCH01J1/3042H01J9/025
Inventor 王小菊查林宏祁康成曹贵川林祖伦雷李杨霞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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