Substrate with heterosphere structure, preparation method and application

A technology of heterogeneous layer and substrate, which is applied in the field of material preparation for microwave devices, can solve the problem that the substrate with heterogeneous layer structure cannot be used in high temperature environment, and achieve the effect of tight combination, high performance reliability, and expanded application

Inactive Publication Date: 2019-09-06

CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST

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AI-Extracted Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: the substrate with heterogeneous layer structure prepared by the existing meth...

Method used

The substrate green body and the glass phase paste printed on the rough surface of the heterogeneous layer can penetrate each other during sintering, and are t...

Abstract

The invention discloses a preparation method of a substrate with a heterosphere structure. The preparation method comprises the following steps: arranging raw ceramic chips to obtain substrate monolayer green bodies, and arranging the substrate monolayer green bodies into a substrate green body; carrying out coarsening, punching and position alignment marking treatment on the upper end or lower end of a heterosphere to obtain a pretreated heterosphere; printing a first printing layer on the coarsening surface of the pretreated heterosphere, printing a second printing layer on the other surfaceopposite to the coarsening surface, and enabling through holes to be filled with a sizing agent to obtain printed pore-filling heterospheres; paving or stacking the printed pore-filling heterosphereson the upper end or lower end of the substrate green body to obtain a stacked body; arranging a supporting layer and a first protective layer on the substrate green body end of the stacked body frominside to outside in sequence, setting a second protective layer on the heterosphere end of the stacked body, and carrying out isostatic pressing to obtain a laminated stacked body; and carrying out degumming and sintering on the laminated stacked body to obtain the substrate with the heterosphere structure. The substrate is used under the condition of high temperature, is not influenced by subsequent assembly temperature, and is wide in range of application.

Application Domain

Semiconductor/solid-state device detailsSolid-state devices +1

Technology Topic

Pre treatmentGreen body +3

Image

Examples

Experimental program(3)

Example Embodiment

[0055] Example 1

[0056] In this embodiment, a substrate with a heterogeneous layer structure is prepared, and the specific process is as follows:

[0057] (1) Preparation of LTCC substrate blank:

[0058] According to the conventional method, the HL2000 zero-shrinkage green ceramic sheet is processed through punching, hole filling, and printing processes to prepare a single-layer LTCC substrate green body. The substrate green body is subjected to lamination, isostatic pressing, and hot cutting to obtain the substrate green body, etc. The static pressure temperature is 80℃, the pressure is 1000PSI, and the pressure holding time is 10min;

[0059] When punching, punch a 0.2mm hole on the substrate as an alignment mark;

[0060] (2) Pretreatment of silicon nitride ceramic thick film plate:

[0061] The heterogeneous layer in this embodiment is a silicon nitride ceramic thick film plate with a thickness of 0.381 mm;

[0062] First, the upper end surface of the silicon nitride ceramic thick film plate is roughened with molten sodium hydroxide for 60 seconds, rinsed with deionized water and dried;

[0063] Then use the laser to process through holes and alignment marks with a diameter of 0.1mm on the thick film board;

[0064] Finally, the thick film plate was cleaned in a 5% dilute hydrochloric acid solution at 80°C for 3 minutes, ultrasonically cleaned with deionized water for 15 minutes, and then dried to obtain a pretreated silicon nitride ceramic thick film plate. The structure diagram is as follows image 3;

[0065] (3) Print and fill holes for pretreated silicon nitride ceramic thick film plates:

[0066] Prepare the template and glass phase paste for printing. The glass phase paste is made of 116g silicon oxide, 36g boron oxide, 20g zinc oxide, 19g aluminum oxide, 5g barium oxide, and 4g potassium oxide after being mixed by ball milling and then added to the conventional organic carrier. Prepared

[0067] The first printing layer is screen-printed on the roughened surface of the pretreated silicon nitride ceramic thick film plate. The paste is a glass phase paste. After printing, it is allowed to stand for 10 minutes and placed in a drying oven to dry. The thickness of the first printing layer after drying 5μm;

[0068] Then use the printing method to fill the through holes of the pretreated silicon nitride ceramic thick film plate with gold conductive paste and dry it in an oven;

[0069] Finally, on the lower end of the pre-treated silicon nitride ceramic thick film plate, the second printed layer circuit pattern is printed with gold material and dried naturally. The thickness after drying is 10μm to obtain a printed hole-filled silicon nitride ceramic thick film plate. The structure diagram is as follows Figure 4;

[0070] (4) Preparation of laminated stack:

[0071] Lay a printed hole-filling silicon nitride ceramic thick film plate on the lower end of the LTCC substrate blank, and the printed hole-filling heterogeneous layer contacts the substrate blank through the roughened surface to obtain a stacked body;

[0072] Then add a 0.5mm alumina support layer and a 2mm silica gel pad protective layer on the LTCC substrate blank end of the stack from the inside to the outside, and add a 5mm nitrile rubber pad protective layer on the silicon nitride ceramic thick film plate end of the stack. , After vacuum packaging, perform hot isostatic pressing, isostatic pressing temperature 80℃, pressure 2500PSI, time 8min, then remove the alumina plate support layer, silica gel pad protective layer, rubber pad protective layer to obtain a laminated stack, in isostatic pressing When the rubber pad protection layer protects the printed graphics of the thick film board;

[0073] (5) Prepare a substrate with a heterogeneous layer structure:

[0074] Place the laminated stack on the setter with the LTCC substrate blank end of the laminated stack facing up, and then go into the muffle furnace to remove glue and sinter;

[0075] The temperature range of the degumming section is 30~460℃, the heating rate is 0.8℃/min, the holding temperature is 460℃, and the holding time is 90min to complete the degumming treatment;

[0076] Then continue to heat up to the peak temperature of 880°C at a heating rate of 5°C/min, and hold time for 8 minutes. After cooling in the furnace, an LTCC substrate with a heterogeneous layer structure of silicon nitride ceramic thick film plate is obtained. The structure diagram is as follows Figure 5.

[0077] The substrate blank and the glass phase paste printed on the roughened surface of the heterogeneous layer can infiltrate each other during sintering and are tightly bonded after sintering. The prepared substrate with a heterogeneous layer structure has high performance and reliability of the heterogeneous layer.

Example Embodiment

[0078] Example 2

[0079] In this embodiment, a substrate with a heterogeneous layer structure is prepared, and the specific process is as follows:

[0080] (1) Preparation of LTCC substrate blank:

[0081] According to the conventional method, the HL2000 zero-shrinkage green ceramic sheet is processed through punching, hole filling, and printing processes to prepare a single-layer LTCC substrate green body. The substrate green body is subjected to lamination, isostatic pressing, and hot cutting to obtain the substrate green body, etc. The static pressure temperature is 80℃, the pressure is 1000PSI, and the pressure holding time is 10min;

[0082] (2) Pretreatment of barium titanate ceramic thick film plate:

[0083] The heterogeneous layer in this embodiment is a barium titanate ceramic thick film plate with a thickness of 0.381 mm.

[0084] First, the upper end surface of the barium titanate ceramic thick film plate is roughened with molten sodium hydroxide for 50s to obtain the roughened surface, which is rinsed and dried with deionized water;

[0085] Then use laser to process through holes and alignment marks with a diameter of 0.15mm on the thick film board;

[0086] Finally, put the thick film plate in 8% sodium hydroxide solution at 90°C for 4 minutes, ultrasonically clean with deionized water for 25 minutes, and then dry to obtain the pretreated barium titanate ceramic thick film plate;

[0087] (3) Print and fill holes for pretreated barium titanate ceramic thick film plates:

[0088] Prepare the template and glass phase paste for printing. The glass phase paste is made of 116g silicon oxide, 36g boron oxide, 20g zinc oxide, 19g aluminum oxide, 5g barium oxide, and 4g potassium oxide after being mixed by ball milling and then added to the conventional organic carrier. Prepared.

[0089] The first printing layer is screen-printed on the roughened surface of the pretreated barium titanate ceramic thick film plate. The thickness of the first printing layer is 8μm. The paste is a glass phase paste. After printing, it is allowed to stand for 8 minutes and placed in a drying oven to dry ;

[0090] Then use the printing method to fill the through holes of the pretreated barium titanate ceramic thick film plate with silver conductive paste and dry it in an oven;

[0091] Finally, on the lower end of the pretreated barium titanate ceramic thick film plate, a silver material is used to print the second printed layer circuit pattern with a thickness of 12 μm, and it is dried naturally to obtain a printed hole-filled barium titanate ceramic thick film plate;

[0092] (4) Preparation of laminated stack:

[0093] Two printed hole-filled barium titanate ceramic thick film plates are laid flat on the upper end of the LTCC substrate blank, and the printed hole-filled barium titanate ceramic thick film plate contacts the upper end of the LTCC substrate blank through the roughened surface to obtain a stack;

[0094] Then add a 0.7mm aluminum plate support layer, a 3mm silica gel pad protective layer, and a 5mm fluororubber pad protective layer on the end of the barium titanate ceramic thick film plate from the inside to the outside. Then heat it after vacuum packaging. Static pressure, isostatic pressure temperature 80℃, pressure 2600PSI, time 10min, then remove the aluminum plate support layer, silica gel pad protective layer, rubber pad protective layer to obtain a laminated stack;

[0095] (5) Prepare a substrate with a heterogeneous layer structure:

[0096] Place the laminated stack on the sintering board with the LTCC substrate blank end facing upwards, and then enter the muffle furnace for degumming and sintering; the degumming section temperature range is 30-460℃, the heating rate is 1℃/min, and the holding temperature is 460 ℃, the holding time is 100min to complete the glue removal treatment;

[0097] Then continue to heat up to a peak temperature of 880°C at a heating rate of 6°C/min, and hold time for 10 minutes. After cooling in the furnace, an LTCC substrate with a heterogeneous layer structure of barium titanate ceramic thick film plate is obtained.

Example Embodiment

[0098] Example 3

[0099] In this embodiment, a substrate with a heterogeneous layer structure is prepared, and the specific process is as follows:

[0100] (1) Preparation of LTCC substrate blank:

[0101] According to the conventional method, the HL800 zero-shrinkage green ceramic sheet is processed through punching, hole filling, and printing in sequence to prepare a single-layer LTCC substrate green body. The substrate green body is subjected to lamination, isostatic pressing, and hot cutting to obtain the substrate green body, etc. The static pressure temperature is 80℃, the pressure is 1000PSI, and the pressure holding time is 10min;

[0102] (2) Pretreatment of tin oxide ceramic thick film board:

[0103] The heterogeneous layer in this embodiment is a tin oxide ceramic thick film plate with a thickness of 0.481 mm.

[0104] First, the upper end surface of the tin oxide ceramic thick film plate is roughened with molten sodium hydroxide for 60 seconds to obtain the roughened surface, which is rinsed and dried with deionized water;

[0105] Then use a laser to process through holes and alignment marks with a diameter of 0.2mm on the thick film board;

[0106] Finally, put the thick film plate in a 10% dilute hydrochloric acid solution for 5 minutes at 100°C in a water bath, and ultrasonically clean with deionized water for 30 minutes, and then dry to obtain a pretreated tin oxide ceramic thick film plate;

[0107] (3) Print and fill holes for pretreated tin oxide ceramic thick film plates:

[0108] Prepare the template and glass phase paste for printing. The glass phase paste is made of 116g silicon oxide, 36g boron oxide, 20g zinc oxide, 19g aluminum oxide, 5g barium oxide, and 4g potassium oxide after being mixed by ball milling and then added to the conventional organic carrier. Prepared.

[0109] The first printing layer is screen printed on the roughened surface of the pre-treated tin oxide ceramic thick film plate. The thickness of the first printing layer is 10μm. The paste is a glass phase paste. After printing, it is allowed to stand for 10 minutes and placed in a drying oven to dry;

[0110] Then use the printing method to fill the conductive paste of gold paste and silver paste in the through holes of the pretreated tin oxide ceramic thick film plate, and dry it in an oven;

[0111] Finally, use palladium silver to print the circuit pattern of the second printed layer on the lower end of the pretreated tin oxide ceramic thick film board, with a thickness of 15 μm, and dry naturally to obtain a printed hole-filled tin oxide ceramic thick film board;

[0112] (4) Preparation of laminated stack:

[0113] Lay a printed hole-filling tin oxide ceramic thick film plate on the upper end surface of the LTCC substrate blank, and the printed hole-filling tin oxide ceramic thick film plate contacts the upper end of the LTCC substrate blank through the roughened surface to obtain a stack;

[0114] Then add a 1mm alumina support layer and a 3mm silica gel pad protective layer on the LTCC substrate blank end of the stack from the inside to the outside, and add a 5mm rubber pad protective layer on the tin oxide ceramic thick film plate end of the stack. After vacuum packaging Carry out hot isostatic pressing, isostatic pressing temperature 80℃, pressure 2800PSI, time 12min, and then remove the alumina plate support layer, silica gel pad protective layer, rubber pad protective layer to obtain a laminated stack. The cross-sectional schematic diagram of the stack is as follows Image 6 , The top view is as Figure 7;

[0115] (5) Prepare a substrate with a heterogeneous layer structure:

[0116] Place the laminated stack on the sintering board, and then go into the muffle furnace for degumming and sintering; the temperature of the degumming section is 30~460℃, the heating rate is 1.5℃/min, the holding temperature is 460℃, and the holding time is 120min to complete the degumming treatment. ;

[0117] Then, the temperature is continued to rise to the peak temperature of 880°C at a heating rate of 6°C/min, and the holding time is 12 minutes. After cooling in the furnace, an LTCC substrate with a heterogeneous layer structure of a tin oxide ceramic thick film plate is obtained.

PUM

Property	Measurement	Unit
Thickness	5.0 ~ 10.0	µm
Thickness	10.0 ~ 15.0	µm
Thickness	0.5 ~ 1.0	mm

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Substrate with heterosphere structure, preparation method and application

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