Preparation method of cavity type bulk acoustic wave resonator and cavity type bulk acoustic wave resonator
A bulk acoustic wave resonator and cavity technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of metal bonding layer bubbles, film lift, depression, etc., to improve stress unevenness, improve bonding efficiency, improve Effects of Roughness Problems
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[0045] The invention provides a preparation method of a cavity-type bulk acoustic wave resonator, comprising the following steps:
[0046] S1) carrying out damage treatment to the single crystal wafer through a single crystal wafer damage treatment process to obtain a single crystal wafer with a damaged layer 7;
[0047] S2) prepare a lower electrode and a sacrificial layer 9 in turn on the lower surface of the single crystal wafer with the damaged layer 7, and prepare a polymer bonding layer 3 with a thickness greater than or equal to the sum of the thicknesses of the sacrificial layer 9 and the lower electrode 2 on the surface of the sacrificial layer 9, After the substrate 4 and the polymer bonding layer 3 are subjected to a bonding process and a single crystal wafer splitting process, a single crystal film with a lower electrode is obtained;
[0048] S3) prepare the upper electrode on the upper surface of the single crystal film with the lower electrode, open the release h...
Embodiment 1
[0063] Sample 1: 1) High-energy helium ions (He+) are injected into the lower surface of the lithium niobate single crystal wafer, so that a damaged layer is formed inside the lithium niobate single crystal wafer, and the damage layer separates the lithium niobate single crystal wafer Lithium niobate upper piezoelectric layer and lithium niobate single crystal thin film layer are formed; the implantation energy of He+ is 200kev, and the implantation depth is 0.6 μm; 2) Magnetron sputtering is used to grow the lower electrode on the lower surface of the lithium niobate single crystal thin film layer , perform mask etching on the lower electrode to obtain a patterned lower electrode, the material of the lower electrode is Al, and the thickness of the lower electrode is 0.01 μm; a sacrificial layer (PI) is grown on the surface of the patterned lower electrode; the sacrificial layer is masked Die etching to prepare a patterned sacrificial layer with a thickness of 0.3 μm; a polymer...
Embodiment 2
[0067] Sample 2: The preparation process is the same as that of Sample 1 in Example 1, the difference is that the thickness of the sacrificial layer is 0.6 μm, the material of the spin-coated polymer bonding layer is HSQ, the thickness is 0.8 μm, and the Q value of the resonator is 2510, which is equivalent to Electromechanical coupling coefficient 19.5%.
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