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A low emi vdmos device with l-type dielectric layer

A dielectric layer, L-shaped technology, applied in the electronic field, to achieve the effect of reducing EMI, reducing circuit volume, and strengthening coupling strength

Active Publication Date: 2022-06-17
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the prior art, there is no solution for integrating the RC snubber circuit into the VDMOS device

Method used

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  • A low emi vdmos device with l-type dielectric layer
  • A low emi vdmos device with l-type dielectric layer
  • A low emi vdmos device with l-type dielectric layer

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Embodiment Construction

[0025] Below in conjunction with accompanying drawing, the technical scheme of the present invention is described in further detail:

[0026] In the prior art, the VDMOS cell structure generally includes a drain metal electrode 101, the drain metal electrode 101 is above the drain N-type heavily doped active region 102, and the drain N-type heavily doped active region 102 is above the N-type heavily doped active region 102. Type lightly doped drift region 103, two source well regions 104 are symmetrically distributed on the upper end of the N-type lightly doped drift region, the upper end of the drift region is covered with gate silicon dioxide 105, and the entire source well region 104 is a P-type lightly doped drift region. Doping, a fourth N-type heavily doped region 106 and a P-type heavily doped region 107 are arranged above the source well region, a portion of the region above the source well region 104 is covered with gate silicon dioxide 105, and the fourth N-type heavi...

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PUM

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Abstract

The present invention proposes a VDMOS device with an L-shaped dielectric layer and low EMI, which includes a VDMOS cell structure, the VDMOS cell structure includes a drain metal electrode and a source metal electrode, and two sides of the VDMOS cell structure are provided with An RC snubber circuit, the RC snubber circuit includes a resistor and a capacitor connected in series, one end of the RC snubber circuit is coupled to the source metal electrode, and the other end is coupled to the drain end metal electrode. The invention effectively reduces the switching loss and electromagnetic interference of the VDMOS device on the basis of ensuring the original basic electrical performance of the VDMOS, and improves the integrated degree of the applied circuit.

Description

technical field [0001] The invention relates to a low-EMI VDMOS device with an L-type dielectric layer, in particular to a low-EMI VDMOS device with an internal integrated RC absorption circuit, belonging to the field of electronic technology. Background technique [0002] In a switching power supply topology including a transformer, when the switching tube is turned off, the loss caused by the overlap of voltage and current is the main part of the switching power supply loss. At the same time, overshoot voltage and oscillation will also occur in the circuit, causing serious electromagnetic interference (EMI, Electromagnetic Interference). If the spike voltage is too high, it will damage the power device. At the same time, the existence of oscillation will also increase the output ripple. In order to reduce the turn-off loss and peak voltage, a snubber circuit needs to be connected in parallel across the power device to improve the performance of the circuit. [0003] The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L23/552
CPCH01L29/7802H01L29/7803H01L23/552
Inventor 王玲成建兵沈醴田莉陈明
Owner NANJING UNIV OF POSTS & TELECOMM
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