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Trivalent bismuth ion doped yttrium-lutetium-gallium-aluminum garnet ultraviolet long-afterglow luminescent material and preparation method thereof

A luminescent material, bismuth ion technology, applied in the field of material science, achieves the effect of simple operation method, strong practicability, and good ultraviolet long afterglow luminescence ability

Active Publication Date: 2019-09-20
SHANDONG UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The ultraviolet long afterglow luminescent material solves the problem that the emission area of ​​the ultraviolet long afterglow luminescent material in the prior art is mainly concentrated in the long-wave ultraviolet light region (340-400nm), and successfully expands the emission area of ​​the ultraviolet long afterglow luminescent material to Mid-short wave UV region

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  • Trivalent bismuth ion doped yttrium-lutetium-gallium-aluminum garnet ultraviolet long-afterglow luminescent material and preparation method thereof
  • Trivalent bismuth ion doped yttrium-lutetium-gallium-aluminum garnet ultraviolet long-afterglow luminescent material and preparation method thereof
  • Trivalent bismuth ion doped yttrium-lutetium-gallium-aluminum garnet ultraviolet long-afterglow luminescent material and preparation method thereof

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[0034] As introduced in the background art, the emission region of the ultraviolet long-lasting luminescent materials in the prior art is mainly concentrated in the long-wave ultraviolet region (340-400nm). Therefore, the present invention proposes a trivalent bismuth ion (Bi 3+ ) doped yttrium lutetium gallium aluminum garnet ultraviolet long afterglow luminescent material preparation method, comprising the following steps:

[0035] Weigh lutetium oxide and / or yttrium oxide, gallium oxide, aluminum oxide and bismuth oxide raw materials according to mole percentage, and mix the raw materials and flux B 2 o 3 Grinding and mixing in a mortar, pre-calcining the prepared powder at a low temperature, pressing the pre-calcined powder into tablets, and then sintering at a high temperature to obtain an ultraviolet long-lasting luminescent material;

[0036] preferred, B 2 o 3 The added amount is 0.1-1wt% of the total mass of lutetium oxide, yttrium oxide, gallium oxide, aluminum o...

Embodiment 1

[0044] According to the following ingredients: UV long afterglow luminescent material Y 3 Ga 5 o 12 : Bi 3+ , with Y 3 Ga 5 o 12 as the matrix, doped with ions Bi 3 + is the active ion, where Bi 3+ The doping amount is 2mol%. Accurately weigh yttrium oxide (Y 2 o 3 )0.6061g, gallium oxide (Ga 2 o 3 ) 0.8415g, bismuth oxide (Bi 2 o 3 )0.0084g and boron oxide (B 2 o 3 ) 0.0073g. Put the above raw materials in an agate mortar and grind for about 1 hour, mix the raw materials thoroughly, then transfer them to a corundum crucible, and pre-fire them at 900°C for 2 hours. After the calcined powder is reground, use a powder tablet press to press about 1 g of the powder into a disc with a diameter of about 15 mm and a thickness of about 1 mm. Finally, the shaped disc was sintered at 1600°C for 4 hours to obtain Y 3 Ga 5 o 12 : Bi 3+ UV long afterglow luminescent material.

[0045] The sample prepared in embodiment 1 is detected:

[0046] For the excitation and e...

Embodiment 2

[0051] According to the following ingredients: UV long afterglow luminescent material Y 3 Al 2 Ga 3 o 12 : Bi 3+ , with Y 3 Al 2 Ga 3 o 12 as the matrix, doped with ions Bi 3+ is the active ion, where Bi 3+ The doping amount is 2mol%; Accurately weigh yttrium oxide (Y 2 o 3 )0.6061g, gallium oxide (Ga 2 o 3 ) 0.5049g, alumina (Al 2 o 3 ) 0.1836g, bismuth oxide (Bi 2 o 3 )0.0084g and boron oxide (B 2 o 3 ) 0.013g. Put the above raw materials in an agate mortar and grind for about 1 hour, mix the raw materials thoroughly, then transfer them to a corundum crucible, and pre-fire them at 1000°C for 2 hours. After the calcined powder is reground, use a powder tablet press to press about 1 g of the powder into a disc with a diameter of about 15 mm and a thickness of about 1 mm. Finally, the shaped disc was sintered at 1500°C for 6 hours to obtain Y 3 Al 2 Ga 3 o 12 : Bi 3+ UV long afterglow luminescent material.

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Abstract

The invention relates to a trivalent bismuth ion doped yttrium-lutetium-gallium-aluminum garnet ultraviolet long-afterglow luminescent material and a preparation method thereof. The base composition of the luminescent material is (Y<1-x>Lu<x>)<3>(Ga<1-y>Al<y>)<5>O<12>:zBi<3+>, wherein x is greater than or equal to 0 and less than or equal to 1, y is greater than or equal to 0 and less than or equal to 1, and z is greater than or equal to 0.001 and less than or equal to 0.1. The invention also provides a preparation method of the ultraviolet long-afterglow luminescent material. The preparation method comprises the following steps: weighing oxide raw materials according to a stoichiometric ratio, carrying out grinding and mixing, carrying out low-temperature pre-sintering on the obtained powder, then carrying out tabletting on the pre-sintered powder material, and finally carrying out high-temperature sintering to prepare the ultraviolet long-afterglow luminescent material. The prepared material can generate medium-wave ultraviolet emission when being irradiated by ultraviolet with a wavelength smaller than 290 nm, and after the light source is moved away, the material can still generate continuous ultraviolet luminescence, wherein the luminescence peak value is in a range of 300-320 nm, and the luminescence lasting time is greater than 1 hour. The ultraviolet long-afterglow luminescent material has a good application prospect in the fields of photocatalysis, disinfection and sterilization, anti-counterfeiting, medical photodynamic therapy and the like.

Description

technical field [0001] The invention belongs to the technical field of material science and relates to the research of luminescent materials, in particular to a trivalent bismuth ion doped yttrium lutetium gallium aluminum garnet ultraviolet long afterglow luminescent material and a preparation method thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Long-lasting luminescent materials, also known as light-storing luminescent materials, can store part of the light energy when irradiated by high-energy ultraviolet light or visible light, and can release energy again under the thermal disturbance of the surrounding environment when the irradiation stops. Continuous se...

Claims

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Application Information

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IPC IPC(8): C09K11/80B01J23/18A01N59/16A01P1/00A01P3/00
CPCC09K11/7701C09K11/7706C09K11/7774B01J23/18A01N59/16B01J35/39
Inventor 梁延杰孙康宁葛平慧
Owner SHANDONG UNIV
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