IGBT (Insulated Gate Bipolar Transistor) device with PNP punch-through triode
A technology for triodes and devices, applied in the field of power semiconductors, can solve the problems of large switching loss, affecting the conduction state of the device, etc., and achieve the effects of reducing the saturation conduction voltage drop, reducing the leakage current, and reducing the turn-off loss.
Active Publication Date: 2019-09-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
[0005] In view of the above, the present invention aims at the problems existing in the existing trench-gate IGBT devices with discrete floating P-regions that the potential variation of the discrete floating P-regions affects the conduction state, blocking state, and large switching loss of the device, and provides An IGBT device with a PNP feedthrough transistor
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[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0026] An IGBT device with a PNP punch-through transistor, the entire cell of which is symmetrical about the cell centerline; the cell structure includes sequentially stacked metal electrodes 7, P+ collector regions 6, N-type buffer layers 5, and N-drift regions from bottom to top 4; the metal emitter 9, the metal electrode 16 and the metal connection 17 are located above the N-drift region 4; the top middle region of the N-drift regio...
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The invention belongs to the technical field of power semiconductors, and specifically relates to an IGBT (Insulated Gate Bipolar Transistor) device with a PNP punch-through triode. The IGBT device is characterized in that a P-type second current collection region and an N-type second base region form a PNP triode structure with a discrete Pbody region; when the device is in forward conduction, the PNP triode structure is not conducted, hole are stored to enhance conductivity modulation, and leakage current is further reduced through a diode connected to a metal electrode in series; and when the device is turned off, the PNP triode is punched through to provide a hole discharge channel, the turn-off time is reduced, and thus the switching time and switching loss are reduced without affecting other electrical characteristics; and the PNP triode is punched through when the device is in a blocking state, and the voltage withstanding capacity of the device is enhanced.
Description
technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to an IGBT device with a PNP punch-through transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT), which is in MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Junction Transistor, Bipolar Junction Transistor) ) is a new type of composite power device born on the basis of IGBT is widely used in switching power supply, rectifier, inverter, UPS (Uninterruptible Power System, uninterruptible power supply) and other fields due to its advantages of small driving current, high input impedance, good thermal stability, and large working current. At the same time, it is also the basis for the development of new technologies such as rail transportation and solar wind power generation. [0003] Since Baliga of General Electric Company of the United States first p...
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Login to View More IPC IPC(8): H01L29/06H01L29/08H01L29/10H01L29/739H01L27/06
CPCH01L27/0635H01L29/0615H01L29/0638H01L29/0684H01L29/0696H01L29/0821H01L29/1004H01L29/7397H01L29/7398
Inventor 李泽宏孙肇峰何云娇赵一尚莫佳宁杨洋贾鹏飞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA