A kind of phononic crystal and thin-film piezoelectric acoustic wave sensor

A piezoelectric acoustic wave and phononic crystal technology, applied in the field of sensors, can solve the problems of limited energy and the inability to effectively improve the quality factor of thin-film piezoelectric acoustic wave sensors, and achieve high quality factor, limited energy dissipation, and efficient reflection.

Active Publication Date: 2021-03-23
SUZHOU INST OF BIOMEDICAL ENG & TECH CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the limitation of the energy reflected by the thin-film piezoelectric acoustic wave sensor provided with phononic crystals in the prior art, and the defects that the quality factor of the thin-film piezoelectric acoustic wave sensor cannot be effectively improved

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  • A kind of phononic crystal and thin-film piezoelectric acoustic wave sensor
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  • A kind of phononic crystal and thin-film piezoelectric acoustic wave sensor

Examples

Experimental program
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Effect test

Embodiment 1

[0053] This embodiment provides a phononic crystal 1 . The phononic crystal 1 is composed of a base 11 and a scatterer 12 formed on the base 11 . like figure 1 and figure 2 As shown, the matrix 11 of the phononic crystal 1 is a composite dielectric layer formed by sequentially stacking three dielectric layers of the piezoelectric layer 4, the ground electrode layer 3 and the substrate layer 2; The periodically arranged through holes form the scatterer 12 of the phononic crystal 1 .

[0054] Specifically, such as figure 2 In the shown unit cell phononic crystal 1, the through hole is a cylindrical hole that runs through the composite phononic crystal 1, figure 2 The smallest periodic structural unit of phononic crystal 1 is shown in . The single-cell phononic crystals 1 are arranged in a square lattice, forming as figure 1 The shown phononic crystal 1 has through-holes arranged periodically, wherein the through-holes extend along the length and width directions of the p...

Embodiment 2

[0072] This embodiment provides a thin film piezoelectric acoustic wave sensor, such as Figure 11 As shown, it includes a substrate layer 2 , a ground electrode layer 3 and a piezoelectric layer 4 stacked in sequence, and at least one interdigital transducer 5 is provided on the side of the piezoelectric layer 4 away from the ground electrode layer 3 . For example, the thin-film piezoelectric acoustic wave sensor is a two-port type, and the side of the piezoelectric layer 4 away from the ground electrode layer 3 is horizontally oppositely provided with two transducers 5 , namely an input transducer and an output transducer. The transducer 5 is specifically an interdigital transducer 5, and the input transducer and the output transducer correspond to the input interdigital transducer and the output interdigital transducer respectively. The two sides of the transducer 5 are respectively provided with phononic crystals 1, that is, on the side where the input IDT is facing away f...

experiment example 1

[0085] This experimental example tests the phononic crystal 1 formed on the aluminum nitride layer, molybdenum layer and silicon substrate layer in the thin-film piezoelectric acoustic wave sensor of Example 2, and the phononic crystal 1 formed only on the silicon substrate layer in the thin-film piezoelectric acoustic wave sensor of Comparative Example 1 The phononic crystal 1, the improvement effect of the acoustic wave transmission loss in the thin film piezoelectric sensor, is as follows:

[0086] 1. Adjust the filling rate of the phononic crystal 1 (that is, the area of ​​the cylindrical through hole / the area of ​​the square lattice), and detect the change of the bandgap width of the phononic crystal 1 in the thin-film piezoelectric acoustic wave sensor. The results are as follows Figure 13 as shown, Figure 13 middle f 1 represents the lower edge frequency of the band gap of phononic crystal 1, f 2 Represents the upper edge frequency of the bandgap of phononic crystal...

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Abstract

A thin film piezoelectric sonic sensor, comprising: a substrate layer (2), a ground electrode layer (3), and a piezoelectric layer (4) which are stacked. At least one transducer (5) is provided on the side of the piezoelectric layer (4) distant from the ground electrode layer (3); phononic crystals (1) at least formed in the piezoelectric layer (4) are correspondingly provided on the two sides of the transducer (5), and the resonant frequency of the thin film piezoelectric sonic sensor is located in a band gap of the phononic crystals (1). According to the thin film piezoelectric sonic sensor, the phononic crystals (1) are at least provided on the piezoelectric layer (4), the mechanical vibration stability of the piezoelectric layer (4) is improved, the sonic wave reflectivity is improved, the energy loss of sonic wave transmission is lowered, and the quality factor of the sensor is improved. A phononic crystal (1) comprises a matrix and a scatterer formed on the matrix; the matrix is formed by at least two stacked dielectric layers; materials of any one of the dielectric layers are different from those of other dielectric layers. The phononic crystal (1) can effectively reduce the sonic wave energy loss, and effectively improve the quality factor of the sensor when the phononic crystal is applied to the thin film piezoelectric sonic sensor.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a phononic crystal and a thin-film piezoelectric acoustic wave sensor. Background technique [0002] Piezoelectric film can realize the conversion between electrical energy and mechanical energy by using its piezoelectric effect. Thin-film piezoelectric acoustic wave sensor uses high-performance thin-film piezoelectric materials and rapidly developing micro-nano manufacturing technology to greatly reduce the effective resonance mass of the sensor. , the operating frequency is constantly increasing, and the detection sensitivity is comparable to that of optical sensors. Not only that, because the manufacturing process of the thin-film piezoelectric acoustic wave sensor is compatible with the CMOS process, it is more convenient for integration and mass production, and has broad application prospects in various modern electronics, communication technology, analysis and detection fie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G10K9/122
CPCG10K9/122
Inventor 周连群李传宇唐玉国李敬
Owner SUZHOU INST OF BIOMEDICAL ENG & TECH CHINESE ACADEMY OF SCI
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