A kind of germanium selenide target and preparation method thereof

A germanium selenide and target technology, applied in the field of photoelectric material production, can solve the problems of high energy consumption, easy oxidation, easy to cause pollution and the like

CN110282975BActive Publication Date: 2022-07-01XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD

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Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
Publication Date: 2022-07-01

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Abstract

The invention relates to the technical field of photoelectric material production, in particular to a germanium selenide target material and a preparation method thereof. The preparation method includes: A) heating the germanium block to 980-1050 DEG C, and keeping the temperature to obtain germanium liquid; B) heating the selenium block to 230-250 DEG C, after keeping the temperature, the selenium block is melted and dropped into the germanium solution , to obtain a mixed smelting solution; C) heating the mixed smelting solution at 980-1050° C. for 30-60 min, and after cooling, a selenium-germanium alloy is obtained; D) the selenium-germanium alloy is ball-milled, and the obtained selenium-germanium powder is Vacuum hot pressing sintering to obtain germanium selenide target; steps A), B) and C) are carried out under vacuum conditions. In the present invention, a selenium-germanium alloy is prepared by a vacuum dropping method, then a selenium-germanium powder is obtained by ball milling, and then a germanium selenide target is prepared by a vacuum hot pressing method. The selenium content varies little.

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Description

technical field

[0001] The invention relates to the technical field of photoelectric material production, in particular to a germanium selenide target material and a preparation method thereof. Background technique

[0002] Germanium Selenide is in Group IVA of the periodic table, and Group VIA compound semiconductors are mostly used in the field of photodetection. The commonly used preparation method of semiconductor compound target generally adopts powder metallurgy method. This method requires that each elemental powder is uniformly mixed or directly sintered with compound powder. The melting point of germanium is 938.5°C, and the melting point of selenium is 221°C. The melting point is too different. Therefore, if germanium powder and selenium powder are directly used to prepare germanium selenide targets, the sintering temperature will be too low and the target density will be poor. Therefore, it is necessary to Synthesis of germanium selenide powder.

[0003] The Ch...

Claims

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