Perovskite solar cell with high short-circuit current, high filling factor and high conversion efficiency and preparation method thereof
A technology of solar cells and short-circuit current, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of decreased filling factor, and the filling factor of perovskite cells has not been significantly improved. Reduce the effect of composite centers
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0043] Preparation of perovskite solar cells
[0044] (1) Wash the 15mm×15mm ITO with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 30 minutes, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;
[0045] (2) Add the PEDOT:PSS solution filtered through a 0.45 μm syringe filter dropwise onto the ITO treated in step (1), then spin-coat at 6000 rpm for 40 seconds, and finally anneal at 120°C for 15 minutes to prepare Obtain PEDOT:PSS hole transport layer;
[0046] (3) The composite layer formed by stacking ITO and PEDOT:PSS hole transport layer was preheated at 70 °C for 2 min, and then 50 μL of MAPbI at 70 °C 3-x Cl x The perovskite precursor solution was added dropwise to the PEDOT:PSS hole transport layer in step (2), first spin-coated at a speed of 1000rpm for 20s, then spin-coated at a speed of 3500rpm for 40s, and finally annealed at 95°C for 20min to obtain MAPbI 3-x Cl x perovskite light-absorbing layer, wherein, in...
Embodiment 2
[0050] Preparation of perovskite solar cells
[0051] (1) Wash the 15mm×15mm ITO with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 30 minutes, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;
[0052] (2) Add the PEDOT:PSS solution filtered through a 0.45 μm syringe filter dropwise onto the ITO treated in step (1), then spin-coat at a speed of 5000 rpm for 40 seconds, and finally anneal at 120°C for 15 minutes to prepare Obtain PEDOT:PSS hole transport layer;
[0053] (3) After preheating the composite layer formed by stacking ITO and PEDOT:PSS hole transport layers at 50°C for 3 min, add 120 μL of PTAA toluene solution with a concentration of 0.25 mg / mL dropwise to PEDOT:PSS in step (2). On the hole transport layer, then spin-coat at a speed of 6000rpm for 50s to obtain a PTAA layer with a thickness of 0.8 μm, wherein the molecular weight of PTAA is 1000-10000;
[0054] (4) The composite layer formed by stacking ITO, P...
Embodiment 3
[0058] Preparation of perovskite solar cells
[0059] (1) Wash the 15mm×15mm ITO with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 30 minutes, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;
[0060] (2) Drop the PEDOT:PSS solution filtered through a 0.45 μm syringe filter onto the ITO treated in step (1), spin-coat at 9000 rpm for 30 seconds, and finally anneal at 130°C for 20 minutes to prepare Obtain PEDOT:PSS hole transport layer;
[0061] (3) After preheating the composite layer formed by laminating the ITO and PEDOT:PSS hole transport layers at 70 °C for 1 min, add 120 μL of PTAA toluene solution with a concentration of 0.5 mg / mL dropwise to the PEDOT:PSS in step (2). On the hole transport layer, then spin-coat at a speed of 8000rpm for 40s to prepare a PTAA layer with a thickness of 1 μm, wherein the molecular weight of PTAA is 1000-10000;
[0062] (4) The composite layer formed by stacking ITO, PEDOT:PSS hole t...
PUM
Property | Measurement | Unit |
---|---|---|
Concentration | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Concentration | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
![application no application](https://static-eureka.patsnap.com/ssr/23.2.0/_nuxt/application.06fe782c.png)
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap