High-power distributed active variable-voltage synthesis power amplifier

Abstract

The invention discloses a high-power distribution type active transformation synthesis power amplifier. The amplifier comprises an input single-ended to differential matching network, a first differential three-stacked amplification network, a second differential three-stacked amplification network, a third differential three-stacked amplification network, a fourth differential three-stacked amplification network, a distributed impedance matching voltage transformation network, and first to fourth power supply bias networks connected with the distributed impedance matching voltage transformation network. According to the invention, the core architecture adopts the first to fourth differential three-stacked amplification networks. Good parasitic parameter rejection of the differential amplifier is utilized. The characteristics of high power gain, high isolation and high output power of the three stacked transistors are utilized, and the good power synthesis characteristic of the distributed impedance matching voltage transformation network is combined, so that the whole power amplifier obtains good high gain, high efficiency and high power output capacity.

Description

technical field [0001] The invention relates to the fields of field effect transistor radio frequency power amplifiers and integrated circuits, in particular to a high power distribution type active variable voltage synthesis power amplifier applied to a transmitting module at the end of a radio frequency microwave transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chip circ...

AI Technical Summary

Problems solved by technology

[0004] (1) High power and high efficiency capabilities are limited: Traditional power amplifiers use a multi-channel parallel combination structure or a distributed structure. The combination efficiency of these two structures is limited, resulting in part of the power loss in the combination network, which limits high power. , high efficiency capability

[0005] (2) Low power consumption, high gain amplification capability is limited: the power amplifier of the traditional single-ended common source transistor is affected by the parasitic parameters of the transistor, the gain is low when working at high frequency, and the power capability is greatly limited at the same time, so as to achieve low power consumption more difficult

[0007] ①The output impedance of the traditional multi-stage, multi-channel synthesis single-ended power amplifier adopts the multi-channel parallel combination structure, so the output synthesis network needs to achieve impedance matching with high impedance transformation ratio, which often needs to sacrifice the gain of the amplifier and reduce the power. thus limiting the high power, high efficiency capability

[0008] ②In the traditional multi-stage, multi-channel synthesis single-ended power amplifier, in order to improve the influence of amplifier gain and isolation, the Cascode transistor amplification structure is also used. However, although the Cascode transistor increases the circuit isolation, the gain cannot be significantly deteriorated with frequency. , and the best impedance matching between Cascode dual transistors cannot be achieved, which reduces the output power characteristics

[0009] It can be seen from this that the design difficulties of high-gain and high-power amplifiers based on integrated circuit technology are: high power and high efficiency output is difficult; there are many limitations in the traditional single transistor structure or the multi-channel synthesis structure of Cascode transistors

Images