Zone controlled rare earth oxide ald and cvd coatings
A technology of rare earth oxides and oxide layers, which is applied in the direction of coating, metal material coating process, superimposed layer plating, etc., and can solve the problem of abnormally large protective coating
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example 1
[0122] Example 1 - On an Al 6061 substrate and an Al 2 o 3 Intermittent ZrO 2 Interrupt Y 2 o 3 Plasma resistant protective coating
[0123] Figure 5A depicts the deposition on Al 2 o 3 Plasma resistant protective coating on buffer layer 520A, Al 2 o 3 A buffer layer 520A is deposited on an Al 6061 aluminum substrate 510A. A rare earth oxide layer 530A of crystalline yttrium oxide is deposited on the alumina buffer layer using atomic layer deposition. Deposition of the crystalline yttrium oxide layer occurs by injecting a yttrium-containing precursor into a deposition chamber containing the article such that the yttrium-containing precursor adsorbs to the surface of the article to form a first half-reaction. Thereafter, an oxygen-containing reactant may be injected into the deposition chamber to form a second half-reaction. The deposition cycle may have been repeated until the target thickness is obtained.
[0124] Subsequently, an interrupt layer 540A of a multi-...
example 2
[0131] Example 2 - On an Al 6061 substrate and an Al 2 o 3 The buffer layer is formed with an intermittent Y x Zr y o z Interrupted Y 2 o 3Plasma resistant protective coating
[0132] Figure 5B depicts the deposition on Al 2 o 3 Plasma resistant protective coating on buffer layer 520B, Al 2 o 3 A buffer layer 520B is deposited on an Al 6061 aluminum substrate 510B. A rare earth oxide layer 530B of crystalline yttrium oxide is deposited on the alumina buffer layer using atomic layer deposition. Subsequently, atomic layer deposition is used to deposit a layer of crystalline zirconia yttrium oxide (e.g., Y 2 o 3 -ZrO 2 solid solution) of the interrupted layer 540B. Layers of crystalline yttrium oxide and crystalline yttrium zirconia may have been deposited in a manner similar to that described in Example 1.
[0133] Break layer 540B is deposited by sequential atomic layer deposition. Specifically, one cycle of zirconia was deposited by atomic layer deposition, f...
example 3
[0141] Example 3 - On an Al 6061 substrate and an Al 2 o 3 The buffer layer is formed with an intermittent Y x Zr y o z Interrupted Y 2 o 3 Plasma resistant protective coating
[0142] Figure 5C depicts the deposition on Al 2 o 3 Plasma resistant protective coating on buffer layer 520C, Al 2 o 3 A buffer layer 520C is deposited on an Al 6061 aluminum substrate 510C. A single-phase crystalline yttrium oxide rare earth oxide layer 530C is deposited on the alumina buffer layer using atomic layer deposition. Subsequently, a mixed multiphase crystalline yttrium zirconia (e.g., Y 2 o 3 -ZrO 2 solid solution) and the interrupted layer 540C of the yttrium oxide layer. The single-phase crystalline yttrium oxide layer and the heterogeneous crystalline zirconia yttrium oxide interrupted layer may have been deposited in a similar manner to that described in Example 1.
[0143] Interrupt layer 540C is deposited by sequential atomic layer deposition. Specifically, one cycl...
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