Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of zinc oxide-based thin film transistor on protein substrate

A thin-film transistor, zinc oxide-based technology, used in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of poor heat resistance of degradable substrates, difficult miniaturization of devices, poor mobility and reliability, etc.

Active Publication Date: 2021-08-20
JILIN JIANZHU UNIVERSITY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, degradable substrates usually have poor heat resistance, and high-temperature processes are usually required in the preparation of inorganic semiconductor materials to obtain high performance
Although organic semiconductor materials can be prepared by low-temperature processes, organic semiconductor materials are not as good as inorganic semiconductor materials in terms of mobility and reliability, and it is difficult to miniaturize devices
In addition, methods such as wet etching are usually used in the patterning process of traditional inorganic semiconductor devices, and these harsh process conditions cannot be applied to degradable substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of zinc oxide-based thin film transistor on protein substrate
  • Preparation method of zinc oxide-based thin film transistor on protein substrate
  • Preparation method of zinc oxide-based thin film transistor on protein substrate

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0047] The invention provides a method for preparing a zinc oxide-based thin film transistor on a protein substrate, which is characterized in that it comprises the following steps:

[0048]Step 1: Take a certain amount of protein powder, add it to the mixed solution of deionized water and ethanol, place it in a water bath, and heat it at 60-75°C for 10-15 minutes to obtain a protein solution;

[0049] Wherein, the volume ratio of the deionized water and ethanol is 1:2.5 to 1:3.5, and the volume ratio of the mass of the protein powder to the mixed melt of the deionized water and ethanol is 1:3.5 to 1:4.5 ;

[0050] Step 2: Drop the protein solution on a flat polyethylene terephthalate plastic (PET) plate. After the solvent evaporates, dry and remove the plate to obtain a degradable circular protein substrate film, such as figure 1 , 2 shown;

[0051] Step 3: covering the first mask plate on the protein base film, and evaporating an aluminum film to form a gate electrode;

...

Embodiment 1

[0070] The method for preparing a zinc oxide-based thin film transistor on a protein substrate provided in this embodiment includes the following steps:

[0071] Step 1: Prepare the protein solution, weigh 5g corn gluten powder, 5ml deionized water, and 15ml ethanol, mix them in a flask, stir with a glass rod until the protein powder is fully dissolved, then place the flask in a water bath at 70°C, Heating for 15 minutes resulted in a protein solution.

[0072] Step 2: Take a flat PET plastic plate, and drop-coat the prepared protein solution on the PET plastic plate. After the solvent volatilizes naturally, the protein film dries and separates from the plastic plate to obtain a degradable protein base film.

[0073] Step 3: Take a mask plate with a circular hole in the middle, the diameter of which is slightly smaller than the diameter of the protein base film, cover the mask plate on the protein base film, place it in the electron beam evaporation (EB) equipment, evaporate ...

Embodiment 2

[0080] The method for preparing a zinc oxide-based thin film transistor on a protein substrate provided in this embodiment includes the following steps:

[0081] Step 1: Prepare the protein solution, weigh 5g corn gluten powder, 5ml deionized water, and 15ml ethanol, mix them in a flask, stir with a glass rod until the protein powder is fully dissolved, then place the flask in a water bath at 70°C, Heating for 15 minutes resulted in a protein solution.

[0082] Step 2: Take a flat PET plastic plate, and drop-coat the prepared protein solution on the PET plastic plate. After the solvent volatilizes naturally, the protein film dries and separates from the plastic plate to obtain a degradable protein base film.

[0083] Step 3: Take a mask plate with a circular hole in the middle, the diameter of which is slightly smaller than the diameter of the protein base film, cover the mask plate on the protein base film, place it in the electron beam evaporation (EB) equipment, evaporate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a zinc oxide-based thin film transistor on a protein substrate, comprising steps: 1: configuring to obtain a protein solution; After volatilization, dry and remove the plate to obtain a degradable circular protein base film; step 3: cover the first mask plate on the protein base film, evaporate an aluminum film to form a grid electrode; step 4: Cover the second mask plate, sputter deposit HfO 2 Insulating layer film; among them, the target sputtering power is 140~160W, the temperature is 85~95℃, the pressure is 7.5~8.5mtorr, Ar / O 2 8.5:1~9.5:1, the deposition time is 1.5~2.5h, HfO 2 The thickness of the insulating layer film is 190-210nm; step 5: cover the third mask on the insulating layer film, and sputter deposit tin-doped zinc oxide active layer film; step 6: on the active layer film After covering the fourth mask plate and evaporating the source electrode and the drain electrode, a degradable thin film transistor is obtained.

Description

technical field [0001] The invention relates to the technical field of thin film transistor preparation, and more specifically, the invention relates to a method for preparing a zinc oxide-based thin film transistor on a protein substrate. Background technique [0002] The first-generation semiconductor materials and devices typified by silicon have entered every aspect of people's lives. While these traditional hard semiconductor materials have made great achievements, they also have insurmountable shortcomings, such as being difficult to degrade in the natural environment And other issues. [0003] In recent years, degradable transient electronic devices have become a research hotspot, which mainly include degradable substrates, semiconductor functional materials, and metal electrodes. These components can be partially or completely degraded after the transient electronic products complete the specified functions, realizing Zero electronic waste emission is a disruptive e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/34H01L29/786C23C14/04C23C14/30C23C14/20C23C14/08C23C14/35
CPCC23C14/042C23C14/083C23C14/086C23C14/20C23C14/30C23C14/3457H01L29/66969H01L29/78603H01L29/7869
Inventor 王超杨帆雷蕾左欢欢王冶王艳芳周路王欢闫兴振初学峰赵春雷迟耀丹杨小天
Owner JILIN JIANZHU UNIVERSITY