Microwave plasma reactor used for manufacturing monocrystal diamond and diffusion device thereof

A technology of diffusion device and plasma, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as unfavorable manufacture of high-quality single crystal diamond, damage to the distribution of the equipotential surface of electric field, and influence on the growth environment of seed crystals, etc. , to achieve the effect of improving the adequacy of the reaction, improving the quality, and improving the temperature

Active Publication Date: 2019-11-19
宁波晨鑫维克工业科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The HPHT method is relatively mature but has certain limitations: the process is difficult to control, the cycle is long, the cost is high, the obtained material has extremely high hardness, and it is difficult to process, etc.
[0005] tm 01 The distribution of the equipotential surface of the microwave electric field in the mode is ellipsoidal, and the intensity of the electric field gradually decreases from the central area to the outside. After the microwave enters the resonant cavity through the dielectric window, the entry of the mixed gas will destroy the distribution of the equipotential surface of the electric field. , affecting the growth environment of the seed crystal, which is not conducive to the manufacture of high-quality single crystal diamond

Method used

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  • Microwave plasma reactor used for manufacturing monocrystal diamond and diffusion device thereof
  • Microwave plasma reactor used for manufacturing monocrystal diamond and diffusion device thereof
  • Microwave plasma reactor used for manufacturing monocrystal diamond and diffusion device thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] refer to figure 1 , shows a structure of a diffusion device, including a diffusion base 10 , a dielectric glass 30 mounted on the diffusion base 10 and a jacket 40 . The diffusion base 10 includes a tapered wall body 11, a first flange 12 connected to the upper edge of the wall body 11 and a second flange 13 connected to the lower edge of the wall body 11, the first flange 12 and The second flange 13 is arranged in parallel, and the diameter of the first flange 12 is smaller than the diameter of the second flange 13, so that the two form a stepped distribution.

[0050] The wall body 11 encloses a diffusion port 14 in its interior. The cross-sectional area of ​​the diffusion port 14 increases uniformly from one side of the first flange 12 toward the second flange 13. The entire diffusion port 14 has a Taper, taper α is between 130°~140°, preferably 135°.

[0051] A plurality of air holes 111 are also provided on the wall body 11, and one end of the air holes 111 commu...

Embodiment 2

[0063] refer to Figure 4 , a microwave plasma reactor for producing single crystal diamond, comprising the diffusion device of Embodiment 1 and a plasma chamber 60 connected to the diffusion device. The diffusion device is connected to the plasma chamber 60 through the second flange 13 , and the entire diffusion device is above the plasma chamber 60 .

[0064] There is a resonant cavity 61 inside the plasma chamber 60 , the diffusion port 14 communicates with the resonant cavity 61 , a base 62 is provided at the bottom of the resonant cavity 61 , and the seed crystal is placed on the base 62 . Wherein, the resonant cavity 61 is cylindrical, and the base 62 is located at the center of the resonant cavity 61 and at the axis of the diffusion port 14 . The bottom of the resonant cavity 61 is also connected with a plurality of gas outlet pipes 63 for circulating and exhausting the mixed gas.

[0065] During work, the air cavity 15 is filled with mixed gas through the intake pipe...

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PUM

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Abstract

The invention discloses a microwave plasma reactor used for manufacturing a monocrystal diamond and a diffusion device thereof. The diffusion device comprises a diffusion base, a gas inlet pipe groupand medium glass, wherein the diffusion base is provided with a conical wall body; the upper edge of the wall body is provided with a first round flange; the lower edge of the wall body is provided with a second round flange which is parallel to the first round flange; the enclosure of the wall body defines a diffusion opening therein; the area of the cross section of the diffusion opening is gradually increased in a direction from the first round flange to the second round flange; the gas inlet pipe group comprises at least two gas inlet pipes which are circumferentially and uniformly distributed around the axis of the diffusion base; the medium glass is clamped in the first round flange and seals the upper part of the diffusion opening; a plurality of gas holes are also circumferentiallyand uniformly arranged in the wall body along an axis; and gas brought in by the gas inlet pipes is introduced into the diffusion opening through the gas holes. According to the invention, through arrangement of the conical diffusion base, microwave is guided to be distributed around a seed crystal in a uniform and stable ellipsoid equipotential surface manner, so a good environment is provided for growth of the seed crystal, and the growth quality of the seed crystal is improved.

Description

technical field [0001] The invention relates to the technical field of microwave plasma chemical vapor deposition equipment, in particular to a microwave plasma reactor and a diffusion device for manufacturing single crystal diamond. Background technique [0002] The reason why natural diamonds are precious is that they need to be pushed to the surface by millions of years of high temperature and pressure. With the continuous innovation of equipment and technology, the quality of artificial diamonds is constantly approaching that of natural diamonds and the cost is gradually being controlled. Therefore, the research and development of artificial masonry, that is, single crystal diamond, has always received widespread attention from all over the world. [0003] The synthesis methods of single crystal diamond mainly include high temperature and high pressure method (HPHT) and chemical vapor deposition (CVD). The HPHT method is relatively mature but has certain limitations: t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/00C23C16/27C23C16/517C23C16/455C23C16/46
CPCC23C16/274C23C16/276C23C16/45559C23C16/463C23C16/517C30B25/00C30B29/04
Inventor 马付根江南宋茜茜
Owner 宁波晨鑫维克工业科技有限公司
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