Interlayer silicon carbide microwave heat structure crucible and preparation method thereof

A technology of silicon carbide crucible and thermal structure, which is applied in the field of composite ceramic crucible preparation, can solve the problems of poor wave-absorbing performance and achieve the effect of improving wave-absorbing performance

Active Publication Date: 2019-11-26
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of poor wave-absorbing performance of silicon carbide material as a microwave thermal structure material, to provide a crucible with interlayer silicon carbide microwave thermal structure and its preparation method

Method used

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  • Interlayer silicon carbide microwave heat structure crucible and preparation method thereof
  • Interlayer silicon carbide microwave heat structure crucible and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Select two arc-shaped quartz crucibles with the same shape and different sizes. The thickness of the quartz crucible is 3mm, and the gap width between the two quartz crucibles is 3-6mm. Immerse the quartz crucible in ethanol for ultrasonic cleaning (frequency 40KHZ, Time 2min), then put into the oven, dry at 60°C for 60min for later use;

[0028] (2) Preparation of silicon carbide slurry:

[0029] a. MgO-Al 2 o 3 -SiO 2 -B 3 o 2 Preparation of glass powder:

[0030] a1. Accurately weigh each glass powder raw material according to the following mass percentage: MgO 20%, Al 2 o 3 18%, SiO 2 52% and B 3 o 2 10%, of which MgO, Al 2 o 3 , SiO 2 and B 2 o 3 The particle sizes of the powders are: 80 μm, 50 μm, 70 μm and 40 μm. After preliminary mixing of the above raw materials, mix them in a ball mill for 2 hours, pass through an 80-mesh sieve, add the sieved mixed powder into a platinum crucible, and place Heating to 1500°C in a resistance furnace with ...

Embodiment 2

[0039] (1) Select two arc-shaped quartz crucibles with the same shape and different sizes. The thickness of the quartz crucible is 4.3mm, and the gap width between the two quartz crucibles is 5-10mm. Immerse the quartz crucible in ethanol for ultrasonic cleaning (frequency 40KHZ , time 10min), then put it into the oven, and dry at 80°C for 20min for later use;

[0040] (2) Preparation of silicon carbide slurry:

[0041] a.MgO-Al 2 o 3 -SiO 2 -B 3 o 2 Preparation of glass powder:

[0042] a1. Accurately weigh each glass powder raw material according to the following mass percentage: MgO 22%, Al 2 o 3 18%, SiO 2 52% and B 3 o 2 8%, of which MgO, Al 2 o 3 , SiO 2 and B 2 o 3 The particle sizes of the powders are: 50 μm, 40 μm, 70 μm and 30 μm. After preliminary mixing of the above raw materials, mix them in a ball mill for 5 hours, pass through a 110-mesh sieve, add the sieved mixed powder into a platinum crucible, and place Heating to 1600°C in a resistance fur...

Embodiment 3

[0051] (1) Select two arc-shaped quartz crucibles with the same shape and different sizes. The thickness of the quartz crucible is 7mm, and the gap width between the two quartz crucibles is 5-15mm. Immerse the quartz crucible in ethanol for ultrasonic cleaning (frequency 40KHZ, time 5min), then put it into the oven, and dry at 70°C for 30min for later use;

[0052] (2) Preparation of silicon carbide slurry:

[0053] a. MgO-Al 2 o 3 -SiO 2 -B 3 o 2 Preparation of glass powder:

[0054] a1. Accurately weigh each glass powder raw material according to the following mass percentage: MgO 22%, Al 2 o 3 18%, SiO 2 50% and B 3 o 2 10%, of which MgO, Al 2 o 3 , SiO 2 and B 2 o 3 The particle sizes of the powders are: 40 μm, 70 μm, 50 μm and 60 μm. After preliminary mixing of the above raw materials, mix them in a ball mill for 4 hours, pass through a 100-mesh sieve, add the sieved mixed powder into a platinum crucible, and place Heating to 1550°C in a resistance furna...

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Abstract

The invention relates to an interlayer silicon carbide microwave heat structure crucible and a preparation method thereof. The preparation method is characterized in that a gap between two stacked quartz crucibles is filled with A silicon carbide slurry, and the interlayer silicon carbide microwave heat structure crucible is prepared after high-temperature sintering; the silicon carbide slurry isprepared from, by mass, 70-85% of a silicon carbide powder, 5-15% of a sintering aid and 10-25% of an organic matter; the sintering aid is a MgO-Al2O3-SiO2-B3O2 glass powder, and is prepared from, bymass, 18-25% of MgO, 17-23% of Al2O3, 50-55% of SiO2 and 5-15% of B3O2; and the organic matter is prepared from, by mass, 70-90% of butyl carbitol, 5-13% of 1,4-butyrolactone, 1.5-3.5% of ethyl cellulose and 1.5-3.5% of sorbitan trioleate. The method has the advantages of omission of a mold for preparing the crucible, and facilitation of improvement of the wave absorbing performance of silicon carbide by using the inner and outer two-layer quartz crucible as the wave-transparent impedance matching layer of the silicon carbide material; and the preparation method is simple, and the crucible canbe widely applied to microwave heating.

Description

technical field [0001] The invention belongs to the field of preparation of composite ceramic crucibles, and relates to a crucible with an interlayer silicon carbide microwave thermal structure and a preparation method thereof. Background technique [0002] The traditional heating method is based on the principle of heat conduction, convection or radiation. The heat is transferred from the outside of the material to the inside to heat the material. The disadvantages are that the heating time is long, the heating is uneven, and local overheating is prone to occur, which cannot meet the requirements. The microwave heating technology is to generate "internal friction heat" through the high-frequency reciprocating motion of dipole molecules inside the heated body to increase the temperature of the heated material, so that the inside and outside of the material are heated at the same time, the heating is uniform, the speed is fast, and it can Selective heating of local areas redu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/577C04B35/622C04B35/64C04B35/638C04B35/632C04B37/00C03C12/00C03C6/04
CPCC03C1/00C03C12/00C04B35/565C04B35/622C04B35/632C04B35/638C04B35/64C04B37/003C04B2235/365C04B2235/6562C04B2235/6567C04B2237/083C04B2237/341
Inventor 彭寿孙扬善马立云张正义杨勇李金威柯震坤曹欣
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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