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Photoprocessing method for silicon heterojunction solar cells

A solar cell and silicon heterojunction technology, which is applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems that the cell efficiency needs to be improved, and the efficiency enhancement method of silicon heterojunction solar cells needs to be further developed.

Active Publication Date: 2021-08-10
国家电投集团新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cell efficiency of silicon heterojunction solar cells still needs to be improved
[0003] Therefore, the research on the synergistic method of silicon heterojunction solar cells needs to be in-depth

Method used

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  • Photoprocessing method for silicon heterojunction solar cells

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Photoprocessing methods for preparing silicon heterojunction solar cells include:

[0047] S100: forming an intrinsic amorphous silicon thin film on two opposite surfaces of a crystalline silicon substrate;

[0048] S200: forming a doped amorphous silicon film on the surface of the intrinsic amorphous silicon film;

[0049] S300: forming a TCO layer on the surface of the doped amorphous silicon film away from the crystalline silicon substrate;

[0050] S400: forming a gate line electrode layer on the surface of the TCO layer away from the crystalline silicon substrate;

[0051] S500: Perform a light treatment on the surface of the cell formed in step S400, wherein the light irradiation conditions are: the light intensity is 30 suns; the sample temperature is 150° C.; the light time is 20 seconds to obtain a silicon heterojunction solar cell.

Embodiment 2

[0053] Photoprocessing methods for preparing silicon heterojunction solar cells include:

[0054] S100: forming an intrinsic amorphous silicon thin film on two opposite surfaces of a crystalline silicon substrate;

[0055] S200: forming a doped amorphous silicon film on the surface of the intrinsic amorphous silicon film;

[0056] S300: forming a TCO layer on the surface of the doped amorphous silicon film away from the crystalline silicon substrate;

[0057] S400: forming a gate line electrode layer on the surface of the TCO layer away from the crystalline silicon substrate;

[0058] S500: performing a light treatment on the surface of the grid wire electrode layer, wherein the light irradiation conditions are: the light intensity is 30 suns; the ambient temperature is 150° C.; the light time is 20 seconds;

[0059] A heat treatment was performed on the sample after the light treatment, wherein the conditions of the heat treatment were: the temperature was 200° C.; the time...

Embodiment 3

[0061] Photoprocessing methods for preparing silicon heterojunction solar cells include:

[0062] S100: forming an intrinsic amorphous silicon thin film on two opposite surfaces of a crystalline silicon substrate;

[0063] S200: forming a doped amorphous silicon film on the surface of the intrinsic amorphous silicon film;

[0064] S300: forming a TCO layer on the surface of the doped amorphous silicon film away from the crystalline silicon substrate;

[0065] S400: forming a gate line electrode layer on the surface of the TCO layer away from the crystalline silicon substrate;

[0066] S500: performing the first light treatment on the surface of the grid line electrode layer,

[0067] The first heat treatment was performed on the samples after the first light treatment,

[0068] The samples after the first heat treatment were subjected to the second light treatment,

[0069] The second heat treatment is carried out on the sample after the second light treatment,

[0070] T...

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Abstract

The invention provides a light treatment method for a silicon heterojunction solar cell. The light treatment method of the silicon heterojunction solar cell includes: at least one light treatment, and the light treatment is performed after forming the amorphous silicon thin film. Therefore, through light treatment, photons of appropriate energy are injected into the amorphous silicon thin film, the migration of hydrogen atoms in the amorphous silicon thin film is improved, the quality of the amorphous silicon thin film and the interface state density of the heterojunction are effectively improved, and the silicon heterojunction is improved. The open-circuit voltage and fill factor of the mass-junction solar cell can be improved, thereby improving the cell efficiency; moreover, the light treatment method does not need to change the cell structure, is simple and easy to operate, has good stability, and is suitable for large-scale production of silicon heterojunction cells.

Description

technical field [0001] The invention relates to the technical field of silicon heterojunction solar cells, in particular to a light treatment method for silicon heterojunction solar cells. Background technique [0002] In recent years, the photovoltaic industry has developed rapidly and has great potential for industrial development. Continuously promoting technological progress is still the main means for the photovoltaic industry to reduce costs and improve efficiency. At present, compared with traditional crystalline silicon cells, silicon heterojunction solar cells have better passivation quality due to the introduction of intrinsic amorphous silicon films on the front and rear surfaces of crystalline silicon substrates, so silicon heterojunction solar cells are used in many high-efficiency crystalline silicon cells It has received great attention in battery technology. However, the cell efficiency of silicon heterojunction solar cells still needs to be improved. [00...

Claims

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Application Information

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IPC IPC(8): H01L31/20
CPCH01L31/202H01L31/208Y02E10/50Y02P70/50
Inventor 赵晓霞王伟田宏波周永谋王恩宇宗军
Owner 国家电投集团新能源科技有限公司
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