a lamno 3 regulation bi 4 ti 3 o 12 Transition metal oxide ferroelectric film with band gap and preparation method thereof
A transition metal, ferroelectric thin film technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problem of hindering the research of transparent conductive oxide and low bandgap photovoltaic oxide, excellent transition metal oxide The disappearance of physical properties and other problems, to achieve the effect of favorable film densification, strong ferroelectricity, and increased power density
Active Publication Date: 2021-07-30
CHANGZHOU UNIV
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Problems solved by technology
However, the excellent physical properties of transition metal oxides induced by d-electrons disappear with the change of bandgap
These difficulties hamper the search for more efficient transparent conducting oxides and low-bandgap photovoltaic oxides
Method used
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Embodiment 1
[0028] The specific preparation steps of the ferroelectric thin film are as follows:
[0029] (1) According to the molecular formula Bi 4 Ti 3 o 12 -LaMnO 3 The stoichiometric ratio in 2 o 3 Powder, MnO 2 Powder, La 2 o 3 Powder and Ti 2 o 3 powder; then ground and mixed and calcined at 900°C for 2 hours to obtain Bi 4 Ti 3 o 12 -LaMnO 3 Ceramic powder; the above ceramic powder is pressed and formed, initially fired at 750°C for 3 hours, crushed and pressed twice to form a blank; finally, the above blank is sintered at 1100°C for 2 hours to form LaMnO 3 Insert Bi 4 Ti 3 o 12 Transition metal oxide ferroelectric ceramic target;
[0030] (2) With the STO on the (001) surface as the substrate, soak the substrate in acetone, ethanol, and deionized water for 10 minutes, rinse with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;
[0031] (3) Bi obtained in step (1) 4 Ti 3 o 12 -LaMnO 3 The ceramic target is placed ...
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Abstract
The invention belongs to the field of ferroelectric thin film technology, in particular to a LaMnO 3 Regulation Bi 4 Ti 3 o 12 Transition metal oxide ferroelectric film with band gap and its preparation method based on LaMnO 3 Insert Bi 4 Ti 3 o 12 The transition metal oxide ferroelectric ceramic is used as the target, and the (001) surface SrTiO 3 As the substrate, Bi was deposited by pulsed laser molecular beam epitaxy 4 Ti 3 o 12 ‑LaMnO 3 film. The present invention prepares LaMnO 3 Insert Bi 4 Ti 3 o 12 The method of the transition metal oxide-based multiferroic thin film, the whole process is carried out in the same cavity to ensure the purity of the sample, and the use of conventional equipment is very conducive to popularization. The prepared composite film exhibits strong ferroelectricity, has high transmittance in the deep ultraviolet region, and can transmit high-energy photons, providing a theoretical and technical basis for new transition metal oxide-based multiferroic devices. Broad application prospects.
Description
technical field [0001] The invention belongs to the field of ferroelectric thin film technology, in particular to a LaMnO 3 Regulation Bi 4 Ti 3 o 12 Band gap transition metal oxide ferroelectric thin film and its preparation method. Background technique [0002] bandgap (E g ) regulation is at the heart of current materials research and optoelectronic device applications. By adjusting the band gap of semiconductors, it is possible to realize the preparation of band gap-tailored heterostructures, such as two-dimensional electron gas and tunnel structures. These studies provide a basis for the understanding of the physical mechanism of quantum electrodynamics, which in turn promotes the emergence of more related devices. In addition, regulating E g The ability to do so is becoming increasingly important for the development of high-efficiency solar cells and transparent conducting oxides. For example, by substituting In or Al for the traditional III-V semiconductor GaA...
Claims
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IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 曹先胜吉高峰
Owner CHANGZHOU UNIV