Transition metal oxide ferroelectric film with Bi4Ti3O12 band gap regulated and controlled by LaMnO3 and preparation method of transition metal oxide ferroelectric film
A transition metal and ferroelectric thin film technology, applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problem of hindering the research of transparent conductive oxides and low band gap photovoltaic oxides, excellent transition metal oxides Problems such as the disappearance of physical properties, to achieve the effect of promoting, strong ferroelectricity, and wide bandgap
Active Publication Date: 2019-12-03
CHANGZHOU UNIV
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Problems solved by technology
However, the excellent physical properties of transition metal oxides induced by d-electrons disappear with the change of bandgap
These difficulties hamper the search for more efficient transparent conducting oxides and low-bandgap photovoltaic oxides
Method used
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Embodiment 1
[0028] The specific preparation steps of the ferroelectric thin film are as follows:
[0029] (1) According to the molecular formula Bi 4 Ti 3 o 12 -LaMnO 3 The stoichiometric ratio in 2 o 3 Powder, MnO 2 Powder, La 2 o 3 Powder and Ti 2 o 3 powder; then ground and mixed and calcined at 900°C for 2 hours to obtain Bi 4 Ti 3 o 12 -LaMnO 3 Ceramic powder; the above ceramic powder is pressed and formed, initially fired at 750°C for 3 hours, crushed and pressed twice to form a blank; finally, the above blank is sintered at 1100°C for 2 hours to form LaMnO 3 Insert Bi 4 Ti 3 o 12 Transition metal oxide ferroelectric ceramic target;
[0030] (2) With the STO on the (001) surface as the substrate, soak the substrate in acetone, ethanol, and deionized water for 10 minutes, rinse with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;
[0031] (3) Bi obtained in step (1) 4 Ti 3 o 12 -LaMnO 3 The ceramic target is placed ...
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Abstract
The invention belongs to the technical field of ferroelectric films, in particular to a transition metal oxide ferroelectric film with a Bi4Ti3O12 band gap regulated and controlled by LaMnO3 and a preparation method of the transition metal oxide ferroelectric film. A transition metal oxide ferroelectric ceramic with LaMnO3 inserted into Bi4Ti3O12 is used as a target material, a (001) surface SrTiO3 is used as a substrate, and a Bi4Ti3O12-LaMnO3 thin film is deposited through a pulsed laser molecular beam epitaxy technology. According to the method for preparing the LaMnO3-inserting Bi4Ti3O12 transition metal oxide-based multiferroic film, the whole process is carried out in the same cavity, so that the purity of a sample is guaranteed, conventional equipment is adopted, and the method is very beneficial to popularization. The prepared composite material film shows strong ferroelectricity, has high transmissivity in a deep ultraviolet region, can transmit high-energy photons, provides theoretical and technical basis for transition metal oxide-based multiferroic novel devices, and has a wide application prospect.
Description
technical field [0001] The invention belongs to the field of ferroelectric thin film technology, in particular to a LaMnO 3 Regulation Bi 4 Ti 3 o 12 Band gap transition metal oxide ferroelectric thin film and its preparation method. Background technique [0002] bandgap (E g ) regulation is at the heart of current materials research and optoelectronic device applications. By adjusting the band gap of semiconductors, it is possible to realize the preparation of band gap-tailored heterostructures, such as two-dimensional electron gas and tunnel structures. These studies provide a basis for the understanding of the physical mechanism of quantum electrodynamics, which in turn promotes the emergence of more related devices. In addition, regulating E g The ability to do so is becoming increasingly important for the development of high-efficiency solar cells and transparent conducting oxides. For example, by substituting In or Al for the traditional III-V semiconductor GaA...
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Login to View More IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 曹先胜吉高峰
Owner CHANGZHOU UNIV