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Active device and passive monocrystal device in radio frequency front-end module and monolithic integration method

An active device, RF front-end technology, used in semiconductor/solid-state device components, electrical solid-state devices, semiconductor devices, etc., can solve problems such as increasing assembly complexity and electrical connection loss, reducing assembly complexity and reducing volume. Effect

Active Publication Date: 2019-12-06
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this method is that different chips are interconnected together, and connecting different chips results in loss of electrical connection and increased assembly complexity, size and cost

Method used

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  • Active device and passive monocrystal device in radio frequency front-end module and monolithic integration method
  • Active device and passive monocrystal device in radio frequency front-end module and monolithic integration method
  • Active device and passive monocrystal device in radio frequency front-end module and monolithic integration method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] This embodiment provides a monolithic integration method of active devices and passive single crystal devices in a radio frequency front-end module, including the following steps:

[0069] (1) The first substrate 103 is selected as the epitaxial growth substrate, and the first single crystal layer 104, the second single crystal layer 105 and the third single crystal layer 106 are sequentially grown on the epitaxial growth substrate from bottom to top, such as figure 2 shown;

[0070] (2) Perform selective etching on the upper surface of the third single crystal layer 106, etch from top to bottom to the second single crystal layer 105, exposing part of the upper surface of the first single crystal layer 104, such as image 3 Shown; Bottom electrode 107 is prepared on the exposed part of the first single crystal layer 104 upper surface, as Figure 4 shown;

[0071] (3) Prepare the source electrode 108 on the upper surface of the third single crystal layer 106 close to ...

Embodiment 2

[0090] This embodiment provides a monolithic integration method of active devices and passive single crystal devices in a radio frequency front-end module, including the following steps:

[0091] (1) The first substrate 103 is selected as the epitaxial growth substrate, and the first single crystal layer 104, the second single crystal layer 105 and the third single crystal layer 106 are sequentially grown on the epitaxial growth substrate from bottom to top, such as figure 2 shown;

[0092] (2) Perform selective etching on the upper surface of the third single crystal layer 106, etch from top to bottom to the second single crystal layer 105, exposing part of the upper surface of the first single crystal layer 104, such as image 3 Shown; Bottom electrode 107 is prepared on the exposed part of the first monocrystalline layer 104 upper surface, as Figure 4 shown;

[0093] (3) Prepare a Bragg reflection layer on the upper surface of the bottom electrode 107. The Bragg reflect...

Embodiment 3

[0114] This embodiment provides a monolithic integration method of active devices and passive single crystal devices in a radio frequency front-end module, including the following steps:

[0115] (1) The first substrate 103 is selected as the epitaxial growth substrate, and the first single crystal layer 104, the second single crystal layer 105 and the third single crystal layer 106 are sequentially grown on the epitaxial growth substrate from bottom to top, such as figure 2 shown;

[0116] (2) Perform selective etching on the upper surface of the third single crystal layer 106, etch from top to bottom to the second single crystal layer 105, and form a second void in the second single crystal layer 105 and the third single crystal layer 106. cavity 123, exposing part of the upper surface of the first single crystal layer 104, such as Figure 20 As shown, the bottom electrode 107 is prepared on the exposed part of the upper surface of the first single crystal layer 104, as ...

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Abstract

The invention discloses an active device and a passive monocrystal device in a radio frequency front-end module and a monolithic integration method. The method comprises the following steps: epitaxially growing a first monocrystal functional layer on a substrate; growing a second, third or more monocrystal epitaxial layers; making the first single crystal epitaxial layer into one or more passive filter devices through an MEMS process, and processing the second third or more single crystal epitaxial layers to obtain one or more amplifiers or low-noise amplifiers or switches and the like, and then growing a passivation layer on the whole surface and performing polishing. Meanwhile, a bonding layer is prepared on the other substrate, the substrate and the other substrate are aligned and bonded, the substrate is removed or thinned, and the MEMS technology processing is continuously carried out, thereby completing the integration of chip components with different functions. By adopting themonolithic integration method, the volume of the radio frequency front-end module can be further reduced, the loss of electrical connection when discrete single devices of the front-end module are integrated on the PCB is avoided, and the cost of the radio frequency front-end module is reduced.

Description

technical field [0001] The invention belongs to the field of radio frequency communication electronic components, in particular to an active device, a passive single crystal device and a monolithic integration method in a radio frequency front-end module. Background technique [0002] The multi-functional development of wireless communication terminals has put forward high technical requirements for radio frequency devices such as miniaturization, high frequency, high performance, low power consumption, and low cost. The traditional surface acoustic wave filter (SAW) has a large insertion loss in the high frequency band above 2.4GHz, and the dielectric filter has good performance but is too large. Film Bulk Acoustic Resonator (FBAR) technology is a radio frequency device with superior performance that has emerged in recent years with the improvement of processing technology and the rapid development of modern wireless communication technology. It has a very high quality fac...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L23/528
CPCH01L23/5283H01L27/0617
Inventor 李国强衣新燕张铁林刘鑫尧赵利帅刘红斌粱敬晗
Owner SOUTH CHINA UNIV OF TECH
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