Superposed battery structure of perovskite and N-type silicon-based back contact battery

Abstract

The invention discloses a superposed battery structure of perovskite and N-type silicon-based back contact battery. The superposed battery structure is characterized by comprising: a perovskite material absorption layer, a front face transparent conducting film deposition layer, a front face passivation layer, a front surface field, an N-type monocrystalline silicon piece substrate and a back facepassivation layer, wherein a back surface P + doped layer and a back face N + doped layer, which are independent from each other are arranged between the N-type monocrystalline silicon piece substrate and the back face passivation layer, and two metal electrodes are respectively connected with the back surface P + doped layer and the back face N + doped layer and are exposed from the surface of the back face passivation layer. According to the stacked battery structure disclosed by the invention, the preparation of a perovskite material superimposed with an interdigitated PN junction on the back face of the back contact battery is realized by using silk-screen printing nanometer phosphor slurry or nanometer boron slurry superposed with laser propulsion, the maximum output of the internalcurrent of the laminated battery is realized, and the photoelectric conversion efficiency of a back contact solar battery is further improved.

Description

technical field [0001] The invention relates to a stacked cell structure of perovskite and N-type silicon-based back contact cells, belonging to the technical field of solar cells. Background technique [0002] At present, silicon-based solar cells are the mainstream of solar cells, accounting for 90% of the photovoltaic market. The efficiency of silicon solar cells has reached 26.1%, which is close to the Shockley-Queisser (Shockley-Queisser) limit efficiency (29.4%). However, the manufacturing cost is still relatively high compared with petroleum and nuclear energy, so reducing the manufacturing cost of silicon-based solar cells is still the research and development goal in the realization stage and in the future. Current studies have found that due to the wide energy distribution of the solar spectrum, any semiconductor material can only absorb photons whose energy value is larger than its forbidden band width. Therefore, a wide-bandgap material can be superimposed on th...

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is: the current tubular high-temperature boron diffusion has uneven square resistance and poor PN junction quality, which leads to the loss of battery current output

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