High-power external cavity semiconductor laser device

A semiconductor, high-power technology, used in semiconductor lasers, lasers, laser parts, etc., can solve the problems of scattered light intensity distribution, poor beam quality, uneven spot, etc., achieve phase locking, suppress high-order modes, improve The effect of beam quality

Active Publication Date: 2019-12-20
BEIJING UNIV OF TECH
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The transverse mode of the widely used high-power vertical cavity surface emitting laser (VCSEL) is generally a high-order mode, which has problems such as un

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power external cavity semiconductor laser device
  • High-power external cavity semiconductor laser device
  • High-power external cavity semiconductor laser device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-power external cavity semiconductor laser device. An outer cavity VCSEL array surface light source is composed of a plurality of VCSEL array light sources, wherein a P-type epitaxial layer of each VCSEL array light source is a multi-film total reflection P-type epitaxial layer, an N-type epitaxial layer of each VCSEL array light source is a multi-film partial reflection N-type epitaxial layer, reflectivity of each N-type epitaxial layer is 50-90%, the outer cavity VCSEL array surface light source is installed on a concave surface of a concave surface reflector, agroove is formed in the middle of a 45-degree oblique angle cylindrical reflector, and a convex surface outer cavity reflector is installed in the groove and right faces the outer cavity VCSEL arraysurface light source. The laser device is advantaged in that a coupling resonant cavity is formed by a concave reflector, the multi-film total reflection P-type epitaxial layer, the multi-film partialreflection N-type epitaxial layer and the convex outer cavity reflector, loss of different transmission modes is controlled by utilizing the feedback adjustment effect of the coupling resonant cavityof the light beam, a high-order mode is suppressed, so phase locking between array units is realized, and the light beam quality of an output light beam is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a high-power external cavity semiconductor laser. Background technique [0002] High-power vertical-cavity surface-emitting semiconductor lasers (VCSELs) have become the most popular due to their small size, high coupling efficiency, low threshold current, high modulation rate, easy two-dimensional integration, single longitudinal mode operation, on-chip testing and low manufacturing cost. One of the important semiconductor optoelectronic devices. High-power VCSEL is not only widely used in laser printing, laser medical treatment, laser drilling, welding processing and other fields, but also widely used in laser radar, laser aiming, laser weapons, laser ranging, laser targeting, laser guidance, laser night vision , laser radar, laser fuze, laser weapons and laser countermeasures and other military fields. [0003] The transverse mode of the widely used high-power v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/183
CPCH01S5/18361
Inventor 王智勇王聪聪
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap