Preparation method and preparation device for high-purity gallium oxide

A preparation device and gallium oxide technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of long process flow, complex process, unfavorable preparation of gallium oxide, etc., to improve reaction efficiency, Agitate for full effect

Inactive Publication Date: 2019-12-31
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The problem is that among the above-mentioned preparation methods, the three-stage electrolysis method and potassium sulfate followed by crystallization and purification method have a long process flow, time-consuming and complicated pro...

Method used

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  • Preparation method and preparation device for high-purity gallium oxide
  • Preparation method and preparation device for high-purity gallium oxide

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preparation example Construction

[0030] Please refer to figure 1 , the present embodiment provides a preparation method of high-purity gallium oxide, comprising the following steps:

[0031] Take metal gallium of 4N purity and mix it with deionized water, the mass ratio of gallium to water is 1:2-1:8;

[0032] Put the mixture of gallium and water into a high-pressure reaction vessel, keep stirring at a temperature of 150-250°C, and perform a hydrothermal reaction for 1-1.5 hours to generate a mixture of gallium oxyhydroxide and gallium oxide;

[0033] The mixture is filtered, and the filtered solid is dried; the filtrate is mixed with deionized water and used as a raw material;

[0034] The solid mixture is calcined at 700-800°C for 1-2h, and the gallium oxyhydroxide decomposes to form gallium oxide.

[0035] The 4N purity described in this application is the representation method of the purity of the equivalent reagent, that is, the purity of 99.99%.

[0036] When metal gallium and high-temperature water ...

Embodiment 1

[0043] Take 4N pure gallium metal and mix it with deionized water, the mass ratio of gallium to water is 1:2;

[0044] Put the mixture of gallium and water into a high-pressure reaction vessel, continuously stir at 150°C, and perform a hydrothermal reaction for 1.5 hours to generate a mixture of gallium oxyhydroxide and gallium oxide;

[0045] The mixture is filtered, and the filtered solid is dried; the filtrate is mixed with deionized water and used as a raw material;

[0046] The solid mixture was calcined at 700°C for 2 hours, and gallium oxyhydroxide was decomposed to form gallium oxide.

Embodiment 2

[0048] Take metal gallium with 4N purity and mix it with deionized water, the mass ratio of gallium to water is 1:4;

[0049] Put the mixture of gallium and water into a high-pressure reaction vessel, continuously stir at 180°C, and perform a hydrothermal reaction for 1.4 hours to generate a mixture of gallium oxyhydroxide and gallium oxide;

[0050] The mixture is filtered, and the filtered solid is dried; the filtrate is mixed with deionized water and used as a raw material;

[0051] The solid mixture was calcined at 730°C for 1.8h, and gallium oxyhydroxide was decomposed to form gallium oxide.

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Abstract

The invention discloses a preparation method for high-purity gallium oxide. The method includes the following steps: mixing metal gallium and water for a reaction to generate a mixture; filtering themixture, and performing drying; and performing calcination on the mixture to generate the gallium oxide. According to method, gallium oxide hydroxide and gallium oxide are prepared through ahigh-temperature hydrothermal reaction, drying is performed and calcination is performed to make the gallium oxide hydroxide decomposed into gallium oxide and water, and after the water is evaporated and escaped, the high-purity gallium oxide is obtained. The present application also provides a preparation device for preparing the high-purity gallium oxide.

Description

technical field [0001] The invention relates to the field of gallium oxide preparation, in particular to a preparation method and a preparation device of high-purity gallium oxide. Background technique [0002] Gallium oxide is an excellent wide-bandgap semiconductor with excellent electrical and optical properties. It is used in the preparation of gas sensors, ultraviolet detectors, thin-film electroluminescent devices, display devices, and transparent conductive films, and shows broad development prospects. and application space. High-purity gallium oxide is the raw material for preparing gadolinium gallium garnet, and gadolinium gallium garnet single crystal is an ideal substrate material for liquid phase epitaxy of YIG (yttrium iron garnet) and YIG-like magneto-optical thin films. [0003] At present, there are many preparation methods of high-purity gallium oxide, for example: using gallium as raw material, high-purity gallium oxide is prepared by three-stage electroly...

Claims

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Application Information

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IPC IPC(8): C01G15/00
CPCC01G15/00C01P2006/80
Inventor 南长斌彭寿潘锦功傅干华马立云郑林蒋猛
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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