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A cuprous oxide/zinc copper oxide/zinc oxide device with a magnesium nitride shell

A magnesium nitride shell, cuprous oxide technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of single structure and large leakage, and achieve the effects of solving leakage, reducing leakage current noise, and improving electrical performance.

Active Publication Date: 2020-12-15
DONGBEI UNIVERSITY OF FINANCE AND ECONOMICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the current zinc oxide-based radiation detector has a single structure and a large leakage current, and proposes a copper oxide film / zinc copper oxide ultra-thin layer / zinc oxide single crystal with a magnesium nitride protective shell Device structure

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  • A cuprous oxide/zinc copper oxide/zinc oxide device with a magnesium nitride shell
  • A cuprous oxide/zinc copper oxide/zinc oxide device with a magnesium nitride shell
  • A cuprous oxide/zinc copper oxide/zinc oxide device with a magnesium nitride shell

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Embodiment 1

[0020] A cuprous oxide / zinc copper oxide / zinc oxide device with a magnesium nitride shell layer, comprising a zinc oxide thin layer, a cuprous oxide thin layer, an ultra-thin zinc copper oxide layer and a magnesium nitride layer;

[0021] The zinc oxide thin layer is a trapezoidal cross-section with a thickness of 300 μm; the upper surface of the zinc oxide thin layer is a zinc oxide single crystal zinc polarization surface with a diameter of 10 mm; the lower surface of the zinc oxide thin layer is a zinc oxide single crystal Oxygen polarized surface with a diameter of 12mm;

[0022] The zinc-copper-oxygen ultra-thin layer is located on the polarized surface of zinc oxide single crystal zinc, and its diameter is 10mm and the thickness is a circular platform of 5nm; coincide;

[0023] The cuprous oxide thin layer is located on the zinc-copper-oxygen ultra-thin layer, and its diameter is 10 mm and the thickness is 0.5 μm. The center of the circle of the cuprous oxide thin layer...

Embodiment 2

[0028] A cuprous oxide / zinc copper oxide / zinc oxide device with a magnesium nitride shell layer, comprising a zinc oxide thin layer, a cuprous oxide thin layer, an ultra-thin zinc copper oxide layer and a magnesium nitride layer;

[0029] The zinc oxide thin layer is a trapezoidal cross-section with a thickness of 300 μm; the upper surface of the zinc oxide thin layer is a zinc oxide single crystal zinc polarization surface with a diameter of 10 mm; the lower surface of the zinc oxide thin layer is a zinc oxide single crystal Oxygen polarized surface with a diameter of 12mm;

[0030] The zinc-copper-oxygen ultra-thin layer is located on the polarized surface of zinc oxide single crystal zinc, and its diameter is 10mm and the thickness is a circular platform of 5nm; coincide;

[0031] The cuprous oxide thin layer is located on the zinc-copper-oxygen ultra-thin layer, and its diameter is 10 mm and the thickness is 0.5 μm. The center of the circle of the cuprous oxide thin layer...

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Abstract

The invention belongs to the technical field of semiconductor devices, and provides a cuprous oxide / zinc copper oxygen / zinc oxide device with a magnesium nitride shell layer. The device comprises a zinc oxide thin layer, a cuprous oxide thin layer, a zinc copper oxygen ultra-thin layer and a magnesium nitride layer. According to the multi-layer heterostructure radiation detector, the high temperature and radiation resistance characteristics of the zinc oxide material in radiation detection can be fully exerted, the serious disadvantage that zinc oxide is difficult to obtain stable hole conductivity characteristics can be overcome by introducing the cuprous oxide layer with hole conductivity characteristics, and thus the junction radiation detector device based on the PN structure is formed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and specifically provides a cuprous oxide / zinc copper oxide / zinc oxide device with a magnesium nitride shell layer. Background technique [0002] The wide bandgap semiconductor zinc oxide material has potential applications in radiation detection due to its outstanding advantages such as large bandgap width, high breakdown field strength and good radiation resistance. At present, one of the important factors restricting the application of ZnO-based devices is the lack of ZnO materials with hole-conducting properties. Cuprous oxide is a semiconductor oxide with hole-conducting properties. The development of new devices based on cuprous oxide thin films and zinc oxide single crystals is expected to meet its application requirements in the field of radiation detection. At the same time, adding an ultra-thin layer of zinc copper oxide to the device can use the polarization induction ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0264H01L31/0352H01L31/08
CPCH01L31/0264H01L31/0352H01L31/08
Inventor 凤天宏
Owner DONGBEI UNIVERSITY OF FINANCE AND ECONOMICS