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A patterned n-type, p-type thermoelectric thin film and its preparation method and flexible thin-film thermoelectric device

A thermoelectric thin film and patterning technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric devices using only the Peltier or Seebeck effect, etc., can solve the problems of complex preparation process, inability to bend, high cost, etc., and achieve simple preparation process, Highly maneuverable and low-cost effects

Active Publication Date: 2021-05-25
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are still two major problems: one is the high cost and low thermoelectric conversion rate, which makes it impossible to realize large-scale applications; the other is that this type of thermoelectric device is inflexible and cannot be bent, so it cannot meet the application of different scenarios
However, at present, the bonding force between thermoelectric materials and substrates is very weak, the equipment involved is generally expensive, and the preparation process is relatively complicated, and it is difficult to integrate N-type and P-type thermoelectric materials on the same substrate.

Method used

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  • A patterned n-type, p-type thermoelectric thin film and its preparation method and flexible thin-film thermoelectric device
  • A patterned n-type, p-type thermoelectric thin film and its preparation method and flexible thin-film thermoelectric device
  • A patterned n-type, p-type thermoelectric thin film and its preparation method and flexible thin-film thermoelectric device

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preparation example Construction

[0023] The preparation method of the patterned N, P type thermoelectric thin film of the present invention comprises the following preparation steps:

[0024] see figure 1 As shown, suction filtration device 1; microporous filter paper 2; vacuum pump suction port 3; patterned mask 4.

[0025] Step 1: Weigh a certain amount of Bi 2 Se x Te 3-x (x = 0.1 ~ 1) powder is placed in a beaker, deionized water is added, a binder is added, and mixed evenly to obtain an N-type thermoelectric material dispersion; the same mass of Bi is weighed x Sb 2-x Te 3 (x = 0.1 ~ 0.8) the powder is also subjected to the above-mentioned operations to obtain a P-type thermoelectric material dispersion; then the two dispersions are subjected to ultrasonic treatment to fully disperse and dissolve the powder materials; wherein, Bi 2 Se x Te 3-x (x = 0.1 ~ 1) and Bi x Sb 2-x Te 3 The concentration range of (x=0.1~0.8) is 5~10mg / mL, preferably but not limited to 8mg / mL; The concentration rang...

Embodiment

[0034] In the embodiment, the beaker used in the present invention is a common beaker with a capacity of 50 mL, and the diameter of the suction filter is 4 cm.

[0035] The specific implementation steps are:

[0036] (1) Weigh 200mg Bi respectively 2 Se x Te 3-x (x = 0.1~1) powder and Bi x Sb 2-x Te 3 (x = 0.1 ~ 0.8) powder

[0037] In two beakers, add 15 mg sodium carboxymethyl cellulose, add deionized water to 25 mL, stir thoroughly with a glass rod, and ultrasonically disperse with 100 W power for 40 min to obtain Bi 2 Se x Te 3-x (x = 0.1 ~ 1) powder N-type dispersion and Bi x Sb 2-x Te 3 (x = 0.1 ~ 0.8) Powder P-type dispersion.

[0038] (2) Select two pieces of medium-speed qualitative filter paper, cut a 5 mm wide and 15 mm long strip in the middle of one of them, use the cut filter paper as a mask, and leave the other untreated; then follow the mask on the top , untreated filter paper in the following order, wet the two filter papers with deionized water and...

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Abstract

The invention discloses a patterned N, P type thermoelectric thin film, a preparation method and a flexible thin film thermoelectric device. The selected thermoelectric material is inorganic powder Bi 2 Se x Te 3‑x (x=0.1~1) and Bi x Sb 2‑ x Te 3 (x=0.1~0.8), the average particle size of the powder is less than 10μm. The preparation method is vacuum-assisted suction filtration through a flexible mask. Compared with preparation processes such as magnetron sputtering and calcination, the preparation method makes the shape of the thermoelectric material deposited on the substrate controllable, the process is simple, the cost is low, and the obtained film has good flexibility. At the same time, the invention provides a new assembly method of flexible thermoelectric devices, which can adapt to the temperature difference power supply of the curved interface, and provides the possibility for smart wearable devices in the future.

Description

technical field [0001] The invention relates to the technical field of low-cost flexible thermoelectric film and device preparation, in particular to a patterned N, P type thermoelectric film, a preparation method and a flexible film thermoelectric device. Background technique [0002] With the development of intelligence and informatization in modern society, wearable electronic devices have gradually entered people's lives and become an indispensable part of the intelligent society. However, at present, most wearable products need to be powered by external power sources such as batteries. On the one hand, the recycling of batteries brings pressure to the environment, and on the other hand, this wastes energy. A promising solution is to use thermoelectric materials to fabricate thermoelectric devices to achieve self-powering of electronic devices. Thermoelectric materials, also known as thermoelectric materials, can directly convert thermal energy into electrical energy. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H01L35/32H10N10/01H10N10/17
CPCH10N10/01H10N10/17
Inventor 吴幸董作院徐何军王超伦
Owner EAST CHINA NORMAL UNIV