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Preparation method of ultrathin nanoscale graphdiyne film

A graphdiyne and nanoscale technology is applied in the field of preparation of ultra-thin nanoscale graphdiyne thin films, which can solve the problems of small area of ​​two-dimensional graphdiyne, complicated processes, impurities, etc., and achieves removal of surface impurities, reduction of roughness, and reduction of thickness. Effect

Active Publication Date: 2020-01-10
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

The two-dimensional graphdiyne obtained by solution ultrasonic method has small area, complex process and easy introduction of impurities

Method used

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  • Preparation method of ultrathin nanoscale graphdiyne film
  • Preparation method of ultrathin nanoscale graphdiyne film
  • Preparation method of ultrathin nanoscale graphdiyne film

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] On the contrary, the invention covers any alternatives, modifications, teaching equivalents and schemes falling within the spirit and scope of the invention as defined by the claims. Further, in order to make the public have a better understanding of the present invention, some specific details are described in detail in the detailed description of the present invention below. The present invention can be fully understood by those skilled in the art without the description of these detailed parts.

[0036] It should be clear that the described embodiments are only some of the embodiment...

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Abstract

The invention belongs to the field of graphdiyne film preparation, and particularly relates to a preparation method of an ultrathin nanoscale graphdiyne film. The preparation method comprises the following steps: preparing an ultrathin graphdiyne film by adopting plasma etching; placing a copper substrate attached with the original graphdiyne film in a plasma etching machine; injecting oxygen intothe cavity of the plasma etching machine, and performing etching; and transferring the film to a target substrate by using a PMMA auxiliary process after the etching, and removing PMMA to obtain theultrathin graphdiyne film. The preparation method adopts the plasma etching to prepare the ultrathin graphdiyne film, and the plasma etching is carried out on graphdiyne grown on a solution on the copper substrate to reduce the thickness of the graphdiyne, and then the graphdiyne is transferred to another substrate, so that complex chemical treatment is omitted, the ultrathin nanoscale graphdiynefilm is obtained, and a large number of functional groups generated by side reactions of graphdiyne are removed.

Description

technical field [0001] The invention belongs to the field of graphyne film preparation, and in particular relates to a method for preparing an ultra-thin nanoscale graphyne film. Background technique [0002] Graphyne is a new type of carbon allotrope. It is a new all-carbon nanostructure material after fullerene, carbon nanotube and graphene. It has abundant carbon chemical bonds, large conjugated system, wide surface Spacing, excellent chemical stability, known as the most stable allotrope of a synthetic diacetylenic carbon. Due to its special electronic structure and excellent semiconductor properties similar to silicon, graphyne is expected to be widely used in the fields of electronics, semiconductors and new energy. Studies have shown that graphdiyne is a very ideal lithium storage material, and its unique structure is more conducive to the diffusion and transmission of lithium ions in and out of the plane, which endows it with very good rate performance. It has been ...

Claims

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Application Information

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IPC IPC(8): C01B32/21B82Y40/00
CPCB82Y40/00C01B32/21
Inventor 张跃温嘉玲张铮
Owner UNIV OF SCI & TECH BEIJING
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