SnO2 piezoresistor with high nonlinearity, low residual voltage and large discharge current capacity for power transmission of power system, and preparation method thereof

A high nonlinear, varistor technology, applied in varistor, varistor core, resistor manufacturing, etc., can solve the problems of low residual voltage, single doping, poor electrical characteristics of varistor, etc. Improve the ability to bleed large current, enhance the nonlinear coefficient, and have the effect of strong aging stability

Active Publication Date: 2020-01-10
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently SnO 2 The reasons for the poor electrical characteristics of varistors come from two aspects: First, in terms of formulation, according to the situation reported in the literature, the doping of elements with the same function in the formulation is too single, resulting in the grain boundary in the prepared sample. The formation effect is poor, making the prepared SnO 2 The electrical characteristics of varistors are relatively poor, and the present invention introduces binary donor doping at the same time, avoiding the defect of single donor element doping; two in terms of

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1) Preparation of powder raw materials

[0027] The SnO 2 The varistor ceramic material is SnO in the following ratio 2 : 69 copies, Co 3 o 4 : 7.5 parts, Cr 2 o 3 : 3.0 parts, Ni 2 o 3 : 2.5 parts, Sb 2 o 5 : 13 copies, Ta 2 o 5 : 5.0 servings to configure the initial raw materials.

[0028] 2) Prepare the required SnO 2 main slurry

[0029] The main powder SnO that will be configured 2 : 69 parts were put into a polyethylene ball mill tank in a ball mill, and deionized water was added, wherein the ratio of material, balls and water was 1:1.5:1.5, mixed ball milled for 12h, and the main slurry was obtained.

[0030] 3) Prepare the required auxiliary slurry

[0031] The auxiliary powder Co that will be configured 3 o 4 : 7.5 parts, Cr 2 o 3 : 3.0 parts, Ni 2 o 3 : 2.5 parts, Sb 2 o 5 : 13 copies, Ta 2 o 5 : 5.0 parts are also put into the polyethylene ball mill tank in the ball mill, and deionized water is added, the ratio of material, balls and...

Embodiment 2

[0047] 1) Preparation of powder raw materials

[0048] The SnO 2 The varistor ceramic material is SnO in the following ratio 2 : 66.85 copies, Co 3 o 4 : 8.25 parts, Cr 2 o 3 : 3.15 parts, Ni 2 o 3 : 3.0 parts, Sb 2 o 5 : 13.5 parts, Ta 2 o 5 : 5.25 parts to configure the initial raw materials.

[0049] 2) Prepare the required SnO 2 main slurry

[0050] The main powder SnO that will be configured 2 : 66.85 parts are put into the polyethylene ball mill tank in the ball mill, and deionized water is added, wherein the ratio of material, balls and water is 1:1.5:1.5, mixed ball mill for 13.5h, and the main slurry is obtained.

[0051] 3) Prepare the required auxiliary slurry

[0052] The auxiliary powder Co that will be configured 3 o 4 : 8.25 parts, Cr 2 o 3 : 3.15 parts, Ni 2 o 3 : 3.0 parts, Sb 2 o 5 : 13.5 parts, Ta 2 o 5 : 5.25 parts are also put into the polyethylene ball mill tank in the ball mill, and deionized water is added, the ratio of material...

Embodiment 3

[0068] 1) Preparation of powder raw materials

[0069] The SnO 2 The varistor ceramic material is SnO in the following ratio 2 : 64.7 copies, Co 3 o 4 : 9.0 parts, Cr 2 o 3 : 3.3 parts, Ni 2 o 3: 3.5 parts, Sb 2 o 5 : 14 copies, Ta 2 o 5 : 5.5 parts to configure the initial raw materials.

[0070] 2) Prepare the required SnO 2 main slurry

[0071] The main powder SnO that will be configured 2 : 64.7 parts were put into the polyethylene ball mill tank in the ball mill, and deionized water was added, wherein the ratio of material, balls and water was 1:1.5:1.5, mixed ball milled for 15h, and the main slurry was obtained.

[0072] 3) Prepare the required auxiliary slurry

[0073] The auxiliary powder Co that will be configured 3 o 4 : 9.0 parts, Cr 2 o 3 : 3.3 parts, Ni 2 o 3 : 3.5 parts, Sb 2 o 5 : 14 copies, Ta 2 o 5 : 5.5 parts are also put into the polyethylene ball mill tank in the ball mill, and deionized water is added, the ratio of the material, b...

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PUM

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Abstract

The invention discloses a SnO2 piezoresistor with high nonlinearity, low residual voltage and large discharge current capacity for power transmission of a power system, and a preparation method thereof. The piezoresistor comprises SnO2, Co3O4, Cr2O3, Ni2O3, Sb2O5 and Ta2O5. The preparation method comprises a main slurry preparation step, an auxiliary slurry preparation step, a mixing step, a forming step, a glue discharging step and a sintering step which are carried out in sequence. The SnO2 piezoresistor has the following advantages: the capability of the SnO2 piezoresistor for discharging and amplifying current is improved, so the purpose of enhancing the nonlinear coefficient and the discharge current capacity of the SnO2 piezoresistor is achieved; and the residual voltage ratio is inhibited at the lowest level, and the SnO2 piezoresistor has a better effect and a higher aging stability than a Ta or Sb element monodoped piezoresistor.

Description

technical field [0001] The invention relates to the field of electrical materials, in particular to a SnO material with high nonlinearity, low residual voltage and large flow capacity for power system transmission. 2 A varistor and a method of making the same. Background technique [0002] The varistor is an electronic component whose conductivity changes with the change of the applied voltage. When the voltage applied across the varistor is greater than the varistor voltage of the varistor, the conductance of the varistor will increase infinitely. Large, the large current is released in a short period of time, thereby protecting the absolute safety of electrical equipment; and when the applied voltage is lower than the varistor voltage of the varistor, the varistor shows an infinitely small conductance at this time, which is quite in the disconnected state. This non-ohmic characteristic of the varistor is similar to two back-to-back Zener diodes, except that the varistor ...

Claims

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Application Information

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IPC IPC(8): C04B35/457H01C7/108H01C17/30
CPCC04B35/457H01C7/108H01C17/30C04B2235/3277C04B2235/3241C04B2235/3279C04B2235/3294C04B2235/3251C04B2235/6562C04B2235/6567
Inventor 赵洪峰刘冬季谢清云程宽王锋蒙晓记燕飞霏
Owner XINJIANG UNIVERSITY
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