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Resistance-variable gating device with high voltage-withstanding self-current limiting performance and preparation method thereof

A gating device, high withstand voltage technology, applied in the direction of electrical components, etc., to achieve the effect of high resistance state stability, low cost, and easy operation

Active Publication Date: 2020-01-17
BEIJING INFORMATION SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the gates in the prior art only have the function of current suppression, and the gates with both high withstand voltage and self-limiting performance have not been reported yet.

Method used

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  • Resistance-variable gating device with high voltage-withstanding self-current limiting performance and preparation method thereof
  • Resistance-variable gating device with high voltage-withstanding self-current limiting performance and preparation method thereof
  • Resistance-variable gating device with high voltage-withstanding self-current limiting performance and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] This embodiment provides a resistive switching gate with high withstand voltage and self-limiting current performance. The structure includes a glass substrate, a bottom electrode thin film nickel, a functional layer hafnium oxide film and a top electrode thin film nickel arranged in sequence from the bottom to the top. The surface of the nickel film on the top electrode is distributed in a cylindrical lattice, and the diameter of the bottom surface of the cylindrical lattice is 30 μm. The area of ​​the nickel film on the bottom electrode is larger than the area of ​​the hafnium oxide film on the functional layer. The thicknesses of the bottom and bottom electrode film nickel, the functional layer film hafnium oxide and the top electrode film nickel are respectively 1mm, 500nm, 300nm, and 500nm; figure 1 Shown is the preparation flow chart of the resistance variable gate, and the specific steps include:

[0058] (1) Substrate pretreatment:

[0059] Soak the glass subst...

Embodiment 2

[0076] This embodiment provides a resistive switching gate with high withstand voltage self-limiting performance. The structure includes a single crystal silicon substrate, a bottom electrode thin film copper nanowire, a functional layer thin film cuprous oxide and The top electrode film is platinum, the surface of the top electrode film nickel is distributed in a lattice pattern, and the diameter of the lattice is 30 μm, and the area of ​​the bottom electrode copper nanowire film is larger than the area of ​​the functional layer cuprous oxide film; the single The thicknesses of the crystalline silicon substrate, the bottom electrode film copper nanowire, the functional layer film cuprous oxide, and the top electrode film platinum are 1mm, 3000nm, 10nm, and 100nm; figure 1 Shown is the preparation flow chart of the resistance variable gate, and the specific steps include:

[0077] (1) Substrate pretreatment:

[0078] Soak the substrate in detergent water, deionized water, abs...

Embodiment 3

[0095] This embodiment provides a resistive switching gate with high withstand voltage and self-limiting current performance. The structure includes a quartz substrate, a bottom electrode thin film of platinum, a functional layer of bismuth telluride thin film and a top electrode thin film of platinum. , the surface of the top electrode film nickel is distributed in a lattice pattern, and the lattice diameter is 30 μm, and the area of ​​the bottom electrode film platinum is greater than the area of ​​the functional layer film bismuth telluride; the quartz substrate, bottom electrode film platinum The thicknesses of the bismuth telluride thin film of the functional layer and the platinum thin film of the top electrode are 1mm, 100nm, 300nm, and 100nm respectively; figure 1 Shown is the preparation flow chart of the resistance variable gate, and the specific steps include:

[0096] (1) Substrate pretreatment:

[0097] Soak the substrate in detergent water, deionized water, abso...

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Abstract

The invention relates to a resistance-variable gating device with high voltage-withstanding self-current-limiting performance and a preparation method of the resistance-variable gating device. The resistance-variable gating device structurally comprises a substrate, a bottom electrode film, a functional layer film and a top electrode film which are sequentially arranged from bottom to top, and thearea of the bottom electrode film is larger than that of the functional layer film. No other material exists between the material thin film layers, and the adjacent thin film layers form a multi-stage secondary functional layer through mutual diffusion to a certain extent, so that the resistance-variable gating device still keeps a low current value under high voltage, and the crosstalk current in a resistance-variable device integrated array can be effectively suppressed. According to the present invention, the problem of component segregation of the functional layer film obtained by deposition in a vacuum state is solved, so that the high-resistance state is more stable. A special material interface effect is formed between the bottom electrode thin film and the functional layer thin film, the current passing through the gating device is stabilized at an extremely low fixed value under the high voltage, so that a self-current-limiting effect is formed, and the external clamping current is omitted.

Description

technical field [0001] The invention belongs to the technical field of gating devices, and in particular relates to a resistive switching gating device with high pressure-resistant self-limiting current performance and a preparation method. Background technique [0002] Resistive switching device technology is an important part of future high-density, next-generation storage, and next-generation computing technologies. From the storage point of view, using a resistive switch device as a memory has the advantages of lower power consumption and faster speed. From the perspective of storage-computing integration, compared with the traditional Von Neumann architecture computing architecture, the computing network based on resistive switching devices can avoid the problem of limited bus speed in traditional computing architectures, and provides a solution beyond Moore's Law. technical approach. However, with the maturity of resistive switching device technology, the difficulty ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/828H10N70/841H10N70/026H10N70/011
Inventor 曹丽莉王李苑缪旻张浩王涛张锦扬
Owner BEIJING INFORMATION SCI & TECH UNIV
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