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Erosion resistant metal oxide coatings deposited by atomic layer deposition

A technology of oxide coating and metal, which is applied in the field of anti-corrosion metal oxide coating, and can solve the problems of impermeability and coating, erosion and particle formation, mechanical separation, etc. of plasma spray coating

Pending Publication Date: 2020-01-31
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] by Al 2 o 3 , AlN, SiC, Y 2 o 3 , quartz and ZrO 2 The resulting plasma spray coating reduces particle generation from chamber components, but this plasma spray coating cannot penetrate and coat high aspect ratio features such as the holes of the showerhead
Although some deposition techniques are capable of coating high aspect ratio features, the resulting coatings may erode and form grains in certain plasma environments (e.g., bromine-containing plasmas) or suffer from insufficient interdiffusion in the coating. mechanical separation of the layers

Method used

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  • Erosion resistant metal oxide coatings deposited by atomic layer deposition
  • Erosion resistant metal oxide coatings deposited by atomic layer deposition
  • Erosion resistant metal oxide coatings deposited by atomic layer deposition

Examples

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example 2

[0105] Example 2 - Co-deposition of Y on a substrate using ALD x Zr y o z coating

[0106] Using ALD according to the embodiments described herein (i.e. performing M1-M2 and M2-M1 co-deposition cycles) would be as Figure 5A The yttrium-zirconium oxide coatings shown in were co-deposited onto the substrate. The codeposition sequence can be expressed by the following formula: 180*[2*(1s Y+1s Zr+100ms H 2 O)+1*(1s Zr+1s Y+100ms H 2 O)]. Thus, the coating was formed by a ratio of two (2) RE-Zr codeposition cycles (m=2) to one (1) Zr-RE codeposition cycle (n=1). In each cycle, each Y and Zr precursor was pulsed for a duration of up to 1 s. Reactant H 2 O pulse 100ms. A total of 180 (K=180) hypercycles were performed. The ALD reactor was controlled at a temperature of 300°C. The yttrium-containing precursor used to form the film is (CH 3 Cp) 3 Y, the zirconium-containing precursor is Cp tris(dimethylamino)zirconium. The thickness of the obtained rare earth metal-conta...

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Abstract

Embodiments of the present disclosure relate to articles, coated articles and methods of coating such articles with a rare earth metal containing oxide coating. The coating can contain at least a first metal (e.g., a rare earth metal, tantalum, zirconium, etc.) and a second metal that have been co-deposited onto a surface of the article. The coating can include a homogenous mixture of the first metal and the second metal and does not contain mechanical segregation between layers in the coating.

Description

technical field [0001] Embodiments of the present disclosure relate to corrosion resistant metal oxide coatings, coated articles, and methods of forming such coatings using atomic layer deposition. Background technique [0002] In the semiconductor industry, devices are fabricated through several fabrication processes that produce structures of ever decreasing size. Some manufacturing processes, such as plasma etching and plasma cleaning processes, expose a substrate to a high velocity stream of plasma to etch or clean the substrate. Plasmas can be highly corrosive and can corrode processing chambers and other surfaces exposed to the plasma. This corrosion can generate particles that often contaminate the substrate being processed, contributing to device defects. Bromine-containing plasmas, which may include bromide ions and free radicals, can be particularly harsh, resulting in particles generated by the interaction of the plasma with materials within the processing chamb...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455
CPCC23C16/40C23C16/45527C04B35/50C04B35/505C04B35/495C04B35/486C04B35/44C04B2235/3224C04B2235/3225C23C16/45531C23C16/4404C23C16/405C23C16/0272C23C16/45525C04B35/48C09D1/00C04B2235/3248C07F7/00C07F5/00
Inventor 邬笑炜J·Y·孙M·R·赖斯
Owner APPLIED MATERIALS INC