Alpha-phase GeTe wide-spectrum infrared detector and preparation method thereof
An infrared detector and wide-spectrum technology, applied in the field of optoelectronics, can solve the problems of high price, mismatched crystal lattice, and high production cost of infrared thermal imaging cameras, and achieve miniaturization and integration, low cost, and high detection rate. high effect
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Embodiment 1
[0024] Embodiment 1: α-phase GeTe wide-spectrum infrared detector, from bottom to top are substrate 1 , α-phase GeTe photosensitive layer 2 and metal electrode layer 3 .
[0025] Wherein, the substrate 1 is quartz glass; the α-phase GeTe photosensitive layer 2 has a thickness of 20nm; the metal electrode layer 3 is an Al electrode with a thickness of 50nm.
[0026] The specific preparation steps of the detector are as follows:
[0027] S1, substrate cleaning: first soak the substrate in a solution mixed with ionized water, hydrogen peroxide and ammonia water at a ratio of 2:1:1, and clean at 80°C for 60 minutes. Subsequently, rinse with deionized water, and then dry with compressed air to completely remove impurities adsorbed on the surface of the substrate.
[0028] S2, sputtering of α-phase GeTe thin film layer: put the substrate in the magnetron sputtering machine, first vacuum to 10 -5 Pa, and then filled with Ar gas to keep the cavity pressure in the range of 3Pa, and t...
Embodiment 2
[0031] Embodiment 2: α-phase GeTe wide-spectrum infrared detector, from bottom to top are substrate 1 , α-phase GeTe photosensitive layer 2 and metal electrode layer 3 .
[0032] Wherein, the substrate 1 is ordinary glass; the α-phase GeTe film layer 2 has a thickness of 30 nm; the metal electrode layer 3 is an Al electrode with a thickness of 100 nm.
[0033] The specific preparation steps of the detector are as follows:
[0034] S1, substrate cleaning: first soak the substrate in a solution mixed with ionized water, hydrogen peroxide and ammonia water at a ratio of 2.5:1:1, and clean at 80°C for 50 minutes. Subsequently, rinse with deionized water, and then dry with compressed air to completely remove impurities adsorbed on the surface of the substrate.
[0035] S2, sputtering of α-phase GeTe thin film layer: put the substrate in the magnetron sputtering machine, first vacuum to 10 -5 Pa, and then filled with Ar gas to keep the cavity pressure in the range of 5Pa, and sput...
Embodiment 3
[0038] Embodiment 3: α-phase GeTe wide-spectrum infrared detector, from bottom to top are substrate 1 , α-phase GeTe photosensitive layer 2 and metal electrode layer 3 .
[0039] Among them, substrate 1 is SiO 2 ; The α-phase GeTe photosensitive layer 2 has a thickness of 60nm, and the metal electrode layer 3 is an Al electrode with a thickness of 150nm.
[0040] The specific preparation steps of the detector are as follows:
[0041] S1, substrate cleaning: first soak the substrate in a solution mixed with ionized water, hydrogen peroxide and ammonia water at a ratio of 3:1:1, and clean at 100°C for 30 minutes. Subsequently, rinse with deionized water, and then dry with compressed air to completely remove impurities adsorbed on the surface of the substrate.
[0042] S2, sputtering of α-phase GeTe thin film layer: put the substrate in the magnetron sputtering machine, first vacuum to 10 -5 Pa, and then filled with Ar gas to keep the cavity pressure in the range of 4Pa, and s...
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