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A triaxial test method for silicon carbide epitaxial wafer doping concentration

A technology of doping concentration and testing method, which is applied in the field of measurement of semiconductor device characteristics, can solve the problems of low detection efficiency of epitaxial doping concentration and imperfect monitoring of doping concentration between chips, etc., so as to improve the yield of doping concentration testing, reduce The number of test points and the effect of improving the epitaxy yield

Active Publication Date: 2022-04-05
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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Problems solved by technology

[0009] The purpose of the present invention is to disclose a triaxial test method for the doping concentration of silicon carbide epitaxial wafers in order to solve the problems of low detection efficiency of the current mass-produced silicon carbide epitaxial doping concentration and imperfect inter-chip doping concentration monitoring

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  • A triaxial test method for silicon carbide epitaxial wafer doping concentration
  • A triaxial test method for silicon carbide epitaxial wafer doping concentration
  • A triaxial test method for silicon carbide epitaxial wafer doping concentration

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[0035] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036]Taking a 4-inch silicon carbide epitaxial wafer as an example, this triaxial doping concentration test model is composed of three a, b, and c radius axes lattices with an included angle of 120°, a total of 13 test points, and the edge is removed by 5mm Then, 5 test points are evenly distributed on each radius axis, where the a-axis vertically bisects the main positioning edge. Taking the a-axis as 0° and the clockwise direction as the positive direction, the lattice on the a-axis is named points 1, 2, 3, 4, and 5 in turn from the center along the a-axis radius; the angle between the b-axis and the a-axis is 120 °, the lattice on the b-axis radiates outward from the center and the radius of the b...

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Abstract

The invention belongs to the field of measuring characteristics of semiconductor devices, and discloses a triaxial test method for the doping concentration of a silicon carbide epitaxial wafer. Among them, the sampling model of the triaxial test method for the doping concentration of silicon carbide epitaxial wafers is composed of three radial axis lattices with an included angle of 120°, and based on the triaxial sampling model, the doping concentration of the wafer and between wafers is proposed. monitoring method. The intra-chip doping concentration is monitored by calculating the average and non-uniformity of each radius axis and the overall doping concentration, and drawing the intra-chip doping concentration distribution mapping diagram for monitoring; Doping concentration is monitored.

Description

technical field [0001] The invention belongs to the field of semiconductor device characteristic measurement, and discloses a triaxial test method for doping concentration of silicon carbide epitaxial wafers. The method of the invention can be applied to the factory inspection of the doping concentration of the mass-produced silicon carbide epitaxial wafer and the process monitoring of the inter-chip doping concentration. Background technique [0002] As one of the third-generation semiconductor materials, silicon carbide has the advantages of wide band gap, low intrinsic doping concentration, high mobility, high breakdown field strength, and radiation resistance, and is an ideal material for modern power electronic devices. Generally, the breakdown voltage of power semiconductor devices is determined by the thickness of the drift region, doping concentration and terminal structure, and the conduction characteristics of power semiconductor devices are also closely related to...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20
Inventor 陈施施张新河温正欣叶怀宇张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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