Binding method of rotary target material

A technology of rotating target and target material, which is applied in metal material coating process, ion implantation plating, coating, etc., which can solve the problem of high employee proficiency requirements, poor control of binding uniformity and binding quality, labor High strength and other problems, to reduce the risk of burns, reduce the labor intensity of workers, and achieve the effect of high automation level

Inactive Publication Date: 2020-02-18
GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, domestic rotating target binding adopts the method of segmented binding. This method requires high proficiency of employees, and the labor intensity is relatively high. The binding uniformity and binding quality are not easy to control.

Method used

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  • Binding method of rotary target material

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Embodiment 1

[0027] A method for binding a rotating target, the back tube is a metal tube titanium tube, the target is an ITO ceramic tube target, and the binding device used includes a heating platform 1, a mold base 2, an external heating device 4, an internal heating device 10, The upper end cover 9, the target pressing block 5, the pressure rod 8, the indium tank 11 and the indium tank heating device, the base of the mold is ring-shaped, and an indium inlet channel 21 is opened on it, and the indium tank and the indium inlet channel are connected through an indium pipe 12 A pipeline heating device 13 is arranged outside the indium pipeline, that is, a flexible heating belt is wrapped outside the indium pipeline, and a valve 14 is arranged on the indium pipeline. The external heating device is a heating jacket with segmental heating function.

[0028] The steps of the method are as follows: respectively roughen the surface of the metal tube and the ceramic tube; then heat the target mate...

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Abstract

The invention relates to a binding method of a rotary target material. The method includes the steps of performing roughening treatment on a target material and a titanium pipe, performing metallization treatment on the target material and the titanium pipe correspondingly, evenly coating the target material and the titanium pipe with a layer of scaling powder, assembling the target material and the titanium pipe, starting a heating device, removing an indium liquid oxidized film from an indium groove, switching on an indium pipeline valve so that indium liquid can slowly fulfill a whole weldjoint and an indium pool from the bottom, starting to perform segmented cooling on the target material, and finally cooling to the room temperature so as to complete the binding process of the whole target material. By means of the binding mode of the whole target material, the binding work of multiple segments of the target material can be simply and efficiently completed. The binding method hasthe advantages that no high-temperature assembling is needed, the assembling time is not strictly controlled, the automation level is high, the requirements for the labor intensity of workers and theproficiency of operation of personnel are not high, and the welding rate and welding quality are quite high.

Description

technical field [0001] The invention relates to a binding method for magnetron sputtering coating rotating targets, in particular to a method for simultaneously binding multiple rotating targets. Background technique [0002] Magnetron sputtering is one of the main technologies for preparing thin film materials, and it is widely used in technical fields such as electronic thin films, optical thin films, photoelectric thin films, magnetic thin films and superconducting thin films. With the development of science and technology, the coating industry has become a specialized industry, and the target market has further expanded. There are generally two types of sputtering targets: planar targets and rotating targets. [0003] At first, planar targets were used, and the utilization rate of planar targets was generally only 20% to 30%. With the advancement of technology, the transition to rotating targets was gradually started. First, the rotating targets were constantly rotating...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/3414C23C14/35
Inventor 陈标郭朋刘所心段宇龙
Owner GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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