Green quantum dots, preparation method therefor and application of green quantum dots

Abstract

The invention discloses green quantum dots, a preparation method therefor and an application of the green quantum dots. The green quantum dots have CdSe / ZnSeXS1-X / ZnS structures and comprise CdSe cores, ZnSeXS1-X shells and ZnS shells, wherein peripheries of the CdSe cores are coated with the ZnSeXS1-X shells, X is greater than 0 and is not greater than 1, and peripheries of the ZnSeXS1-X shells are coated with the ZnS shells. The green quantum dots have the characteristics of quantum efficiency higher than 90%, half-peak breadth between 20nm and 26nm, monodispersity and the like; and QLED devices based on the green quantum dots have the advantages of high external quantum efficiency, long device lifetime and the like.

Description

technical field

[0001] The invention relates to the technical field of functional materials, in particular to a green quantum dot, its preparation method and its application. Background technique

[0002] Quantum Dot (QD) is a semiconductor nanocrystal with a size usually between 1 and 100 nm and having a quantum confinement effect. Due to its special optical and photoelectric properties, such as extremely broad absorption spectrum, very narrow emission spectrum, and high luminous efficiency, by adjusting the size of quantum dots to adjust the corresponding band gap of quantum dots, its electrical properties can be significantly adjusted. , optical properties, etc. Quantum dots have broad application prospects in various components such as light-emitting components or photoelectric conversion components, and have been used in many fields such as display, lighting, solar energy, anti-counterfeiting, and bioluminescent marking.

[0003] Quantum dot-based light-emitting diode...