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Green quantum dots, preparation method therefor and application of green quantum dots

A technology of quantum dots, quantum dot solutions, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, etc., can solve problems such as stability and low solubility

Active Publication Date: 2020-02-21
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The main purpose of the present invention is to provide a kind of green quantum dot, its preparation method and its application, to solve the problem of the green quantum dot in the prior art in stability, quantum efficiency, device life and the solubility in the high viscosity ink used for printing There are varying degrees of low

Method used

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preparation example Construction

[0035] In another typical embodiment, the present application provides a method for preparing green quantum dots, comprising the following steps: S1, preparing CdSe quantum dots as CdSe cores; S2, forming ZnSe around the CdSe cores X S 1-X shell, resulting in CdSe / ZnSe X S 1-X Quantum dots, where 0X S 1-X A ZnS shell layer is formed on the periphery of the quantum dots to obtain the above-mentioned green quantum dots.

[0036] The preparation method of green quantum dots provided by this application uses a two-step coating method to first prepare CdSe quantum dots, and use them as CdSe cores, which are sequentially coated on the periphery to form ZnSe X S 1-X shell (0X S 1-X The reactivity and coating amount of the precursors of Se and S in the shell layer, and then adjust the position of its emission wavelength, and finally obtain green quantum dots with high optical quality, high brightness life, and high quantum efficiency in QLED devices. Moreover, the green quantum ...

Embodiment 1

[0065] Preparation of CdSe / ZnSe 0.5 S 0.5 / ZnS quantum dots

[0066] (1) CdSe / ZnSe 0.5 S 0.5 Synthesis of quantum dots

[0067] 1) Weigh 0.183g of zinc acetate (1mmol), 1.12g of OA (4mmol), and 5g of ODE in sequence and place them in a 100mL three-neck flask, add a magnet, and raise the temperature of the system to 160°C under the protection of nitrogen. Then carry out magnetic stirring, the stirring speed is 60rpm / min, and the time for passing nitrogen to exhaust air and acetic acid is at least 0.5h;

[0068] 2) Weigh 20mg of Se powder (0.25mmol), add 0.5mL of TOP (trioctylphosphine), and ultrasonically dissolve it; weigh 8mg of S powder (0.25mmol), add 0.5mL of TBP (tributylphosphine ), sonicate to dissolve it; subsequently, Se-TOP and S-TBP are mixed and set aside;

[0069] 3) After the system is deoxygenated, the temperature of the system is raised to 305°C, and the purified CdSe quantum dot solution (CdSe, UV=495nm, OD=50, 25nmol) is added;

[0070] 4) Inject the m...

Embodiment 2

[0083] Preparation of CdSe / ZnSe 0.8 S 0.2 / ZnS quantum dots

[0084] Different from Example 1, the CdSe core used in step (1) is UV=545nm, OD=50, 25nmol; ZnAc 2The dosage is reduced to 0.8mmol, the dosage of Se powder is increased to 0.4mmol, and dissolved in 0.8mL TOP solution; the dosage of S powder is reduced to 0.1mmol, dissolved in 0.2mL TBP; the temperature of the precursor solution (mixed solution C) of the Zn source is prepared at 150°C, synthesize CdSe / ZnSe 0.8 S 0.2 The temperature of the quantum dots is 280°C, and the reaction is kept for 10 minutes, and the measured CdSe / ZnSe 0.8 S 0.2 The PL of quantum dots is 556nm, the half maximum width is 22nm, and the average size of the electron microscope is 8.7nm;

[0085] In step (2), the ZnAc 2 Increase the dosage to 2mmol, increase the dosage of OA to 8mmol, increase the dosage of S powder to 1mmol, dissolve it in 2ml TBP, prepare the precursor solution of Zn source (mixed solution F) at a temperature of 150°C, a...

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Abstract

The invention discloses green quantum dots, a preparation method therefor and an application of the green quantum dots. The green quantum dots have CdSe / ZnSeXS1-X / ZnS structures and comprise CdSe cores, ZnSeXS1-X shells and ZnS shells, wherein peripheries of the CdSe cores are coated with the ZnSeXS1-X shells, X is greater than 0 and is not greater than 1, and peripheries of the ZnSeXS1-X shells are coated with the ZnS shells. The green quantum dots have the characteristics of quantum efficiency higher than 90%, half-peak breadth between 20nm and 26nm, monodispersity and the like; and QLED devices based on the green quantum dots have the advantages of high external quantum efficiency, long device lifetime and the like.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a green quantum dot, its preparation method and its application. Background technique [0002] Quantum Dot (QD) is a semiconductor nanocrystal with a size usually between 1 and 100 nm and having a quantum confinement effect. Due to its special optical and photoelectric properties, such as extremely broad absorption spectrum, very narrow emission spectrum, and high luminous efficiency, by adjusting the size of quantum dots to adjust the corresponding band gap of quantum dots, its electrical properties can be significantly adjusted. , optical properties, etc. Quantum dots have broad application prospects in various components such as light-emitting components or photoelectric conversion components, and have been used in many fields such as display, lighting, solar energy, anti-counterfeiting, and bioluminescent marking. [0003] Quantum dot-based light-emitting diode...

Claims

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Application Information

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IPC IPC(8): C09K11/88H01L51/50B82Y20/00B82Y30/00
CPCC09K11/883B82Y20/00B82Y30/00H10K50/115C09K11/88C09K11/02
Inventor 陈小朋赵海洋谢阳腊苏叶华
Owner NANJING TECH CORP LTD
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