Slurry for suspension plasma spraying and method for forming sprayed coating
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHIN ETSU CHEM CO LTD
- Publication Date
- 2020-02-21
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Abstract
Description
technical field
[0001] The present invention relates to slurries for use in suspension plasma spraying. The slurry can be used to form a spray coating suitable for parts or components placed within plasma etching equipment used in semiconductor manufacturing processes. The invention also relates to methods for forming spray coatings. Background technique
[0002] In a plasma etching apparatus used in a semiconductor manufacturing method, a wafer as an object to be processed is processed in an atmosphere of halogen-based gas plasma, such as fluorine-based gas plasma and chlorine-based gas plasma. As the fluorine-based gas, SF is used 6 、CF 4 、CHF 3 , HF or NF 3 , and as chlorine gas, using Cl 2 、BCl 3 , HCl, CCl 4 or SiCl 4 .
[0003] In order to manufacture parts or components exposed to highly corrosive gas plasma atmospheres in plasma etching equipment, a corrosion-resistant spray coating is usually formed on the surface of a substrate by atmospheric plasma spray...