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Organic transistor element, organic light emitting transistor element, and manufacturing method thereof

A technology for a light-emitting transistor and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, transistors, electrical components, etc., can solve problems such as difficulty in reproducing production components, difficulty in making CNT mesh source electrodes, and insufficiency.

Pending Publication Date: 2020-03-13
KWANGWOON UNIV IND ACADEMIC COLLABORATION FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Korean Laid-Open Patent No. 10-2013-0130011 of the patent related to this describes "active matrix dilution source enables vertical organic light-emitting transistor)", but the actual situation is that such prior art has Agglomeration (References: Lee, B. et al. J.Appl.Phys.116, 144503, 2014), Difficulty in fabricating CNT mesh source electrodes with flat and uniform surface, Difficulty in reproducible production elements, Effectiveness of CNT-VOLET elements Aperture ratio (effective aperture ratio, AR eff ) is about 98%, which is still insufficient, and the parasitic power consumption of this component must be further reduced to 6.2% (McCarthy, M.A. et al. Science 332, 570-573, 2011)

Method used

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  • Organic transistor element, organic light emitting transistor element, and manufacturing method thereof
  • Organic transistor element, organic light emitting transistor element, and manufacturing method thereof
  • Organic transistor element, organic light emitting transistor element, and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0077] [Experimental example 1] Operation characteristics of Gr-VOLET

[0078] figure 1 is a diagram related to the structure of Gr-VOLETs, showing a bottom gate (Bottom-gate) including indium tin oxide (indium tin oxide, ITO), Al 2 o 3 Schematic structure of Gr-VOLET with gate dielectric layer, SLG source electrode, organic light-emitting channel layer, and Al metal drain electrode. By the action of Gr-VOLET, holes are injected from the SLG source to the light-emitting channel layer, and electrons are injected from the Al drain to the light-emitting channel layer. Through the action of Gr-VOLET, hole injection from the source of SLG can be performed by applying gate voltage, V GS (or V G ) for modulation, V G The application essentially affects the electroluminescence process that takes place in the channel layer.

[0079] figure 2 shown at a fixed source-drain voltage of -3.8V (V DS ) (or V SD =3.8V), at various V G EL light emission of the Gr-VOLET sample under a...

Embodiment 1

[0083] SLG with intrinsic characteristics cleaned by electron chemistry (hereinafter referred to as "SLG 1 ")

Embodiment 2

[0085] With ferric chloride (FeCl 3 ) p-type doped SLG (hereinafter referred to as "SLG 2 ")

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Abstract

The invention relates to an organic light emitting transistor based on a low dimensional electronic structural material, and more specifically relates to an organic light emitting transistor, which isbasically flat, is easy to process, has a low dimensional electronic structure, and takes graphene as the source (or drain) electrode. Moreover, the graphene based organic light emitting transistor (Gr-VOLET) has a very low power loss and the effective aperture ratio (AReff) is prominently improved even under high luminance and can reach 150% or more. Furthermore, the tunneling process of injecting holes from graphene source electrode into channel layer has mechanism of efficient modulation with gate voltage, and present invention with such excellent element action principle can be utilized in next generation display devices, general lighting applications, and light emitting transistor devices of utility in other fields.

Description

technical field [0001] The present invention relates to an organic transistor and an organic light-emitting transistor having an electrode composed of a substance having a low-dimensional electronic structure, and more particularly, relates to using a substance electrode having a flat and easily processable low-dimensional electronic structure as a source electrode or a drain electrode A vertical organic transistor, an organic light-emitting transistor, and a manufacturing method thereof. Background technique [0002] In recent years, various advanced devices such as organic light-emitting diodes (OLEDs), solar cells, transistors, and sensors using organic semiconductor materials have been successfully developed in the field of cutting-edge electronics. Among them, in order to achieve high-quality display, lighting, and high-brightness, high-efficiency, and full-color electroluminescence (electroluminescence, EL) emission of photosensitive devices, in OLED (organic light-emi...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/00H10K50/805H10K50/30H10K71/00H01L29/1606H10K59/125H10K50/11
Inventor 朴炳柱
Owner KWANGWOON UNIV IND ACADEMIC COLLABORATION FOUND
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