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Under-seed device for crystal growth

A technology of crystal growth and seed crystal, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of easy falling off of the glue layer, and achieve the effect of simplifying the placement and fixing process of the seed crystal and reducing the heat loss.

Active Publication Date: 2022-03-29
安徽微芯长江半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, this introduces the problem of selection of bonding materials and process control, and on the other hand, there is also the problem that the glued layer is easy to fall off when the crystal grows too heavy.

Method used

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  • Under-seed device for crystal growth
  • Under-seed device for crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1: Growth of 3-inch high-purity SiC crystal

[0044] Unscrew the upper cover 5 and the lower bottom support 8 of the crucible structure, insert the wafer support frame 9 with a funnel-shaped structure with a platform inner diameter of 3 inches, put SiC powder 10 in the annular groove 7 on the inner wall of the crucible, and A seed crystal 11 with a diameter of 3 inches is put into the funnel-shaped wafer support frame 9, and the top cover 5 and the bottom bottom support 8 of the crucible structure are screwed on. The top cover 1 of the heat preservation structure, the middle cylinder 2 of the heat preservation structure, the bottom cover support 3 of the heat preservation structure, and the gasket 4 of the bottom of the heat preservation structure are tightly wrapped outside the crucible structure. The device of the present invention is placed in a closed chamber. Specifically, in the implementation process of silicon carbide crystal growth, usually under th...

Embodiment 2

[0046] Embodiment 2: Growth of 4-inch conductive silicon carbide crystal

[0047] Unscrew the upper cover 5 and the lower bottom support 8 of the crucible structure, insert the wafer support frame 9 with a funnel-shaped structure with a platform inner diameter of 4 inches, put silicon carbide powder 10 in the annular groove 7 on the inner wall of the crucible, Put the seed crystal 11 with a diameter of 4 inches on the funnel-shaped wafer support frame 9, and screw on the top cover 5 and the bottom bottom support 8 of the crucible structure. The top cover 1 of the heat preservation structure, the middle cylinder 2 of the heat preservation structure, the bottom cover support 3 of the heat preservation structure, and the gasket 4 of the bottom of the heat preservation structure are tightly wrapped outside the crucible structure. The device of the present invention is placed in a closed chamber. Specifically, during the implementation process of silicon carbide crystal growth, by...

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Abstract

The invention provides a seed crystal down-mounted device for crystal growth, which includes a cylindrical down-mounted crucible and a cylindrical heat-preservation structure, the heat-preservation structure is tightly wrapped around the under-mounted crucible; the heat-preservation structure includes: Cylinder; the upper sealing cover of the thermal insulation structure arranged above the middle cylinder of the thermal insulation structure; the lower bottom support of the thermal insulation structure arranged under the middle cylinder of the thermal insulation structure, and a hole is formed in the lower bottom cover support of the thermal insulation structure; the insulation for sealing the hole Gasket at the bottom of the structure; the lower crucible includes: a cylinder in the middle of the crucible; a top cover on the crucible arranged above the cylinder in the middle of the crucible; a groove; a crucible bottom cover set under the cylinder in the middle of the crucible; and a funnel-shaped wafer support frame set on the crucible bottom cover for placing seed crystals. The invention can realize the application requirements of sublimation-desublimation crystals with high crystal quality, specific doping and large anchor size.

Description

technical field [0001] The invention relates to an under-seed device for crystal growth, which can be used for the growth of sublimation-desublimation crystals, and belongs to the field of growth equipment for crystal materials. Background technique [0002] The basic principle of sublimation-desublimation crystal growth is to place the raw materials and seed crystals in relatively high-temperature and low-temperature regions respectively. During the growth process, the raw materials are heated in the high-temperature region, and the solid raw materials become gaseous after being heated. Under the multiple effects of gas, concentration diffusion and thermal diffusion, it reaches the low temperature zone, and the seed crystal in the low temperature zone adsorbs gaseous components to complete the process of desublimation and recrystallization. Taking the growth of common silicon carbide (SiC) crystals as an example, the core device to realize the growth of SiC crystals is the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 卓世异刘学超严成锋忻隽孔海宽施尔畏
Owner 安徽微芯长江半导体材料有限公司
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