Organic electrofluorescence device and display device
An electroluminescent device and a luminescent technology, which are applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve problems such as low lifespan and large device efficiency roll-off, and achieve cost reduction, omission of electronic barrier layers, Reduce the effect of the evaporation chamber
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[0079] The invention also provides a preparation method of the organic electroluminescence device, which comprises sequentially depositing a first electrode, an organic layer and a second electrode on a substrate, and then encapsulating. Wherein, when preparing the light-emitting layer, the method of multi-source co-evaporation can be used to adjust the evaporation rate of the host material and the evaporation rate of the dye so that the dye reaches a preset doping ratio. By adopting the device structure of the present application, one evaporation chamber can be reduced in actual mass production, which greatly simplifies the evaporation process steps and reduces the cost.
[0080] An embodiment of the present invention also provides a display device, which includes the organic electroluminescent device as provided above. Specifically, the display device may be a display device such as an OLED display, and any product or component having a display function such as a TV, a digit...
Embodiment 1-31、 comparative example 3-4
[0083]Embodiments 1-28 and Comparative Examples 3-4 respectively provide an organic electroluminescence device, and its device structure includes an ITO anode, a hole injection layer (HIL), a hole transport layer (HTL), and an emissive layer (EML) successively. , hole blocking layer (HBL), electron transport layer (ETL), electron injection layer (EIL) and cathode.
[0084] Wherein, the material of the hole injection layer is HI-3, and the thickness is 2nm. The material of the hole transport layer is HT-28 with a thickness of 30 nm. The material of the luminescent layer includes a host material, a sensitizer and a fluorescent dye, and the thickness of the luminescent layer is 30nm. The material of the hole blocking layer is HB-4, and the thickness is 5 nm. The material of the electron transport layer is ET-52, and the thickness is 25nm. The material of the electron injection layer is LiQ (1nm), and the material of the cathode is Al (150nm).
[0085] The preparation methods ...
Embodiment 29
[0101] The difference from Example 3 is that the doping concentration of the fluorescent dye F-30 is 0.1wt%, the doping concentration of the sensitizer T-93 is 15wt%, and the thickness of the light-emitting layer is 10nm.
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