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Quantum dot film and preparation method thereof

A technology for thin film preparation and quantum dots, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of not paying attention to the stability of quantum dots, and achieve improved water and oxygen barrier performance, good stability, The effect of improving the service life

Active Publication Date: 2020-03-27
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the above patents did not pay attention to how to further improve the stability of quantum dots

Method used

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  • Quantum dot film and preparation method thereof

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preparation example Construction

[0027] A method for preparing a quantum dot thin film provided in an embodiment of the present invention includes the following steps:

[0028] S1 Obtain quantum dots by thermal injection or room temperature synthesis, and dissolve them in toluene, inject tetramethoxysilane (TMOS) or tetramethoxysilane (TMOS) or tetraethyl orthosilicate (TEOS) into it with a syringe under the condition of rapid stirring and fully Stir to make the silicon dioxide produced by hydrolysis coat the quantum dots to form quantum dot microspheres 1 to obtain a quantum dot microsphere solution;

[0029] S2 Mix the quantum dot microsphere solution with the organic polymer solution, and stir fully so that the quantum dot microsphere 1 is evenly dispersed in the organic polymer solution to obtain a mixture, and then inject the mixture onto a clean glass sheet, and place it in a vacuum-dried It is solidified into a film in the box to obtain the initial quantum dot film;

[0030] S3 adopts the low-temperat...

Embodiment 1

[0035] Using green light CsPbBr 3 (Green light perovskite) quantum dots to prepare quantum dot films, the particle size of the quantum dots is less than 10nm, the emission peak is at 508nm, and there are organic ligands on the surface. The specific preparation steps are as follows:

[0036] S1 Preparation of quantum dots: Mix cesium stearate with octadecyl and oleic acid, heat and dissolve at 100°C to obtain the Cs precursor for later use; add lead bromide, oleic acid, oleylamine and octadecyl into a four-necked flask , heated to 100°C under vacuum, magnetically stirred at a speed of 700r / min while heating, kept at 100°C and continued to heat for 30min, then gradually heated to 155°C under a nitrogen atmosphere, and quickly injected the prepared Cs precursor into it , stay for about 3s, put it into an ice-water bath to cool; after cooling to 25°C, take it out and put it into a centrifuge tube, add ethyl acetate as an anti-solvent at a ratio of 2:1, then centrifuge at 7000r / min...

Embodiment 2

[0041] Synthesis of CsPbBr at room temperature 3 (Green light perovskite) quantum dots to prepare quantum dot films, the particle size of the quantum dots is less than 10nm, the emission peak is at 518nm, and there are organic ligands on the surface. The specific preparation steps are as follows:

[0042] S1 preparation of quantum dots: CsBr, PbBr 2 , oleic acid and oleylamine were added to N,N-dimethylformamide (DMF), the mixed solution was magnetically stirred at 90°C for 2 hours to obtain a clear solution, and then the above clear solution was quickly injected into toluene to obtain green light quantum dots;

[0043] S2 Preparation of quantum dot microspheres: placing the above quantum dot solution in a flask, quickly injecting TMOS at a speed of 1500r / min, and then fully stirring at room temperature for 20h to obtain a quantum dot microsphere solution;

[0044]S3 preparation of the initial quantum dot film: put PMMA in toluene, dissolve at 80 ° C, stir while heating, stir...

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Abstract

The invention belongs to the field of optical films and packaging, and particularly discloses a quantum dot film and a preparation method thereof. The preparation method comprises the following steps:S1, coating quantum dots to obtain quantum dot microspheres; S2, mixing the quantum dot microspheres in an organic polymer solution, and carrying out curing and forming to obtain an initial quantum dot film; and S3, depositing an oxide layer on the surface of the initial quantum dot film to obtain a quantum dot film, thus completing the preparation of the quantum dot film. According to the preparation method, the quantum dots are sequentially coated with an organic or inorganic substance, an organic polymer and an oxide, the prepared quantum dot film is good in uniformity, the stability of the quantum dots is effectively improved, and the service life of the quantum dots is prolonged.

Description

technical field [0001] The invention belongs to the field of optical film and packaging, and more specifically relates to a quantum dot thin film and a preparation method thereof. Background technique [0002] Quantum dots are a kind of semiconductor nanocrystals that have attracted extensive attention due to their superior optoelectronic properties. Quantum dots have a wide color gamut, high color purity, and adjustable luminous wavelengths, making them ideal display materials. However, quantum dots are sensitive to water, oxygen, light, heat, etc., and are prone to failure when exposed to natural environments. For use, quantum dots need to be coated and encapsulated. [0003] Quantum dot electroluminescent devices have not yet been put into actual production, but quantum dot backlight display technology based on the principle of photoluminescence has appeared in the market. In quantum dot backlight display technology, the stability of the quantum dot film layer and The t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02H01L51/56
CPCC09K11/025H10K71/12
Inventor 陈蓉刘梦佳单斌曹坤文艳伟
Owner HUAZHONG UNIV OF SCI & TECH
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