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Mid-far infrared multi-band laser

A multi-band, laser technology, applied in the laser field, can solve the problems of single wavelength and complex structure of mid- and far-infrared lasers

Pending Publication Date: 2020-03-27
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] A mid-to-far infrared multi-band laser proposed by the present invention can solve the technical problem that the mid-to-far infrared laser has a single wavelength and a relatively complex structure that cannot meet the requirements

Method used

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  • Mid-far infrared multi-band laser

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Side-pumped Er doped with 790nm LD 3+ An Er:YAP laser rod with a concentration of 5at%, LGS electro-optic Q-switching, increases the output energy at 2.7μm through a one-stage amplification method. Among them, M1 is a 2.7 μm resonant cavity mirror, and M2 and M3 are output mirrors with 10% and 30% transmission in the 2.7 μm band, respectively. M6, M7 and ZGP constitute the third optical path, where M6 is an input mirror with 95% transmittance in the 2.7μm band and full reflection in the 3-5μm band, and M7 is an output mirror with 10% transmission in the 3-5μm band; M4 and M5 and CdSe form the second optical path, in which M4 is an input mirror with 95% transmittance in the 2.7μm band and full reflection in the 8-14μm band, and M5 is an output mirror with 10% transmission in the 8-14μm band; when the optical switch is turned on in the middle , can directly output 2.7μm laser. When the 2.7μm laser enters the third optical path through the reflector in the optical switch,...

Embodiment 2

[0041] Side-pumped Er doped with 970nm LD 3+ An Er:YAP laser rod with a concentration of 20at%, LGS electro-optic Q-switching, increases the output energy at 2.7μm through a one-stage amplification method. Among them, M1 is a 2.7 μm resonant cavity mirror, and M2 and M3 are output mirrors with 40% and 60% transmission in the 2.7 μm band, respectively. M6, M7 and ZGP constitute the third optical path, where M6 is an input mirror with 95% transmittance in the 2.7μm band and full reflection in the 3-5μm band, and M7 is an output mirror with 30% transmission in the 3-5μm band; M4, M5 and CdSe constitute the second optical path, in which M4 is an input mirror with a transmittance of 95% in the 2.7μm band and a total reflection in the 8-14μm band, and M5 is an output mirror with a 30% transmittance in the 8-14μm band; the optical conversion switch is opened in the middle 2.7μm laser can be output directly. When the 2.7μm laser enters the third optical path through the reflector in ...

Embodiment 3

[0043] Side-pumped Er doped with 970nm LD 3+ An Er:YAP laser rod with a concentration of 30at%, LGS electro-optic Q-switching, increases the output energy at 2.7μm through a one-stage amplification method. Among them, M1 is a 2.7 μm resonant cavity mirror, and M2 and M3 are output mirrors that are 80% and 90% transparent in the 2.7 μm band, respectively. M6, M7 and ZGP constitute the third optical path, where M6 is an input mirror with 95% transmittance in the 2.7μm band and full reflection in the 3-5μm band, and M7 is an output mirror with 50% transmission in the 3-5μm band; M4, M5 and CdSe constitute the second optical path, in which M4 is an input mirror with a transmittance of 95% in the 2.7μm band and a total reflection in the 8-14μm band, and M5 is an output mirror with a 50% transmittance in the 8-14μm band; the optical conversion switch is opened in the middle 2.7μm laser can be output directly. When the 2.7μm laser enters the third optical path through the reflector ...

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Abstract

A mid-far infrared multi-band laser can solve the technical problems that a mid-far infrared laser is single in wavelength and relatively complex in structure and cannot meet requirements. The mid-farinfrared multi-band laser comprises a first resonant cavity mirror, a laser rod, an LGS electro-optic Q-switched crystal, a second resonant cavity mirror, an amplification stage, a third resonant cavity mirror and an optical change-over switch which are linearly arranged in sequence, three light paths are arranged after the light passes through the light change-over switch, and the first path isemitted along the straight line of the light switch; the second path and the third path are light paths respectively forming an included angle alpha and an included angle beta with the first light path; the second light path comprises a fourth resonant cavity mirror, a cadmium selenide crystal element and a fifth resonant cavity mirror which are linearly arranged in sequence; and the third light path comprises a sixth resonant cavity mirror, a phosphorus-germanium-zinc crystal element and a seventh resonant cavity mirror which are linearly arranged in sequence. Through the laser working substance Er: YAP crystal, the LGS electro-optic Q-switched crystal and the ZGP and CdSe infrared nonlinear frequency conversion crystal, 2.7 [mu]m, 3-5 [mu]m and 8-14 [mu]m three-band laser output can be realized on one laser through the optical conversion switch.

Description

technical field [0001] The invention belongs to the technical field of lasers, and in particular relates to a mid-far infrared multi-band laser. Background technique [0002] Erbium-doped ion laser materials, in which 4 I 11 / 2 → 4 I 13 / 2 The energy level transition can produce laser light near the 2.7-3μm band, which overlaps with the strong absorption peak of water, so the absorption rate of water to it is particularly high, and it is an ideal working band for fine surgery. Due to its properties, erbium lasers have been widely used in the fields of biology and medicine. Compared with the 2.79 μm of the currently developed Cr, Er:YSGG and the 2.94 μm of Er:YAG, the 2.7 μm has the advantages of small optical fiber transmission loss and shallower skin damage layer. In addition, by using 2.7μm laser to pump infrared nonlinear crystals to realize optical parametric oscillation, mid-to-far infrared light sources of 3-5 and 8-14μm can be obtained, which can be used for photoe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/10H01S3/11H01S3/16
CPCH01S3/10061H01S3/1121H01S3/1608
Inventor 孙敦陆罗建乔倪友保张会丽赵绪尧权聪胡伦珍韩志远董昆鹏程毛杰
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI