Two-dimensional MOSFET/MFIS multifunctional switch memory device and preparation method thereof

Abstract

The invention discloses a two-dimensional MOSFET (Metal Oxide Semiconductor Field Effect Transistor) / MFIS (Metal-Oxide-Semiconductor Field Effect Transistor) multifunctional switch storage device anda preparation method thereof. A nanoscale multifunctional device with a comprehensive two-dimensional structure and integrating switch and storage characteristics is prepared. The MOSFET structure isdoped with Si, silicon dioxide, a two-dimensional semiconductor nanosheet, a source electrode and a drain electrode to realize a switching function; the MFIS structure comprises a top gate electrode,a two-dimensional ferroelectric film, a cubic boron nitride insulating layer sheet, a two-dimensional thin-layer semiconductor nanosheet, a source electrode and a drain electrode, and achieves a storage function. The mobility of the field effect transistor taking the two-dimensional material as the channel reaches 700cm < 2 > / Vs, and the switching ratio exceeds 108; the two-dimensional ferroelectric thin film is used as a ferroelectric material for replacing a traditional MFIS, the thickness limitation of the ferroelectric thin film is broken through, the thickness of the ferroelectric thin film is reduced to the thickness of a monatomic layer and is about 1 nm, and the polarization direction of the ferroelectric thin film is changed through the magnitude of voltage applied to a top gate so that nonvolatile information storage can be achieved. Due to the unique two-dimensional MOSFET / MFIS structure, the integration level and the information storage density of the transistor are greatlyimproved.

Description

technical field [0001] The invention relates to the fields of semiconductor field effect transistors and non-volatile information storage, in particular to a design and preparation method of a new type of MOSFET / MFIS multifunctional switching storage device based on two-dimensional ferroelectric materials. The invention firstly realizes a multi-functional unit device with a nano-scale process integrating switch and storage characteristics with a comprehensive two-dimensional structure. Background technique [0002] According to "Moore's Law", every 18 months, the number of transistors that can be accommodated on an integrated circuit will double, and the performance will also double. However, traditional silicon-based transistors will soon reach their physical limits due to the constraints of quantum effects. Therefore, looking for semiconductor transistor materials to replace silicon-based semiconductors is currently a hot topic in the field of semiconductor research world...

AI Technical Summary

Problems solved by technology

There are many limitations in the ferroelectric material in the classical FRAM structure. This is because the traditional ferroelectric film is not scalable, and when its thickness is reduced, the ferroelectric performance weakens or even disappears. As a result, FRAM has not broken through the 130 nanometer technology node, which hinders the traditional Widespread use of FRAM

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