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Method for preparing nitrogen-doped graphene material based on 4-amino-1,2,4-triazole

A technology of nitrogen-doped graphene and graphene, which is applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems that graphene materials are not easy to compound, and the application is limited, so as to improve the free carrier Effects of density, expanded application, improved conductivity and stability

Inactive Publication Date: 2020-04-10
GUANGDONG UNIV OF PETROCHEMICAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a preparation method of nitrogen-doped graphene material based on 4-amino-1,2,4-triazole, aiming to solve the problem that graphene material is not easy to be combined with other materials, resulting in limited application

Method used

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  • Method for preparing nitrogen-doped graphene material based on 4-amino-1,2,4-triazole
  • Method for preparing nitrogen-doped graphene material based on 4-amino-1,2,4-triazole
  • Method for preparing nitrogen-doped graphene material based on 4-amino-1,2,4-triazole

Examples

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Embodiment 1

[0019] 0.1 g of graphene with a sheet diameter of 0.2 μm was added to 25 ml of deionized water, stirred magnetically at 600 r / min for 60 minutes, then placed in an ultrasonic disperser and ultrasonicated for 60 minutes to obtain a 4 mg / ml graphene solution.

[0020] Dissolve 0.4 g of 4-amino-1,2,4-triazole into 25 ml of deionized water, add the above graphene solution, heat at 100°C for 30 minutes, cool down to 0°C, and dry for 48 hours to obtain graphene-coated 4- Amino-1,2,4-triazole co-crystal.

[0021] Grind the graphene-coated 4-amino-1,2,4-triazole eutectic into powder, heat it in a tube furnace to 600°C, and keep it warm for 4 hours to obtain nitrogen-doped graphite with a nitrogen content of 10.76%. vinyl material.

Embodiment 2

[0023] Add 0.1 g of graphene with a sheet diameter of 100 μm into 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 30 minutes to obtain a 4 mg / ml graphene solution.

[0024] Dissolve 0.2g of 4-amino-1,2,4-triazole into 25ml of deionized water, add the above graphene solution, heat at 70°C for 60min, cool down to 4°C, and dry for 48h to obtain graphene-coated 4 -Amino-1,2,4-triazole co-crystal.

[0025] Grind the graphene-coated 4-amino-1,2,4-triazole eutectic into powder, heat it in a tube furnace to 600°C, and keep it warm for 4 hours to obtain nitrogen-doped graphite with a nitrogen content of 7.86%. vinyl material.

Embodiment 3

[0027] Add 0.1 g of graphene with a sheet diameter of 100 μm into 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 30 minutes to obtain a 4 mg / ml graphene solution.

[0028] Dissolve 0.1g of 4-amino-1,2,4-triazole into 25ml of deionized water, add the above graphene solution, heat at 70°C for 60min, cool down to 4°C, and dry for 48h to obtain graphene-coated 4- Amino-1,2,4-triazole co-crystal.

[0029] Grind the graphene-coated 4-amino-1,2,4-triazole eutectic into powder, heat it in a tube furnace to 600°C, and keep it warm for 4 hours to obtain nitrogen-doped graphite with a nitrogen content of 5.29%. vinyl material.

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Abstract

A method for preparing a nitrogen-doped graphene material based on 4-amino-1,2,4-triazole is disclosed. The method includes dispersing graphene into deionized water; adding an aqueous solution of 4-amino-1,2,4-triazole; heating at 50-100 DEG C for 30-60 min; cooling to room temperature; drying to obtain a 4-amino-1,2,4-triazole eutectic substance coated with graphene; grinding the substance into powder; and heating the powder in a tubular furnace at 500-800 DEG C for 3-5 h to obtain the nitrogen-doped graphene material. In the obtained material, 4-amino-1,2,4-triazole crystals are evenly coated with the graphene, and surface performance of the 4-amino-1,2,4-triazole crystals can be completely maintained without the use of an adhesive or other auxiliary agents.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a preparation method of a nitrogen-doped graphene material based on 4-amino-1,2,4-triazole. Background technique [0002] Graphene (G) is a two-dimensional honeycomb lattice material formed by the close bonding of planar single-layer carbon atoms, with a thickness of about 0.35nm, which is the thinnest two-dimensional material in the world. [0003] Graphene has no resistance for electrons to pass through, generates less heat, and has high electrical conductivity. It is the material with the best electrical conductivity known, and has unique properties. For example, the tensile strength can reach 130GPa; the carrier mobility can reach 15000-25000cm 2 / Vs (square centimeter per volt second), which can exceed 10 times that of silicon wafers; thermal conductivity can reach 5000W / mK (watt per millithermal conductivity), which is 3 times that of diamond; it a...

Claims

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Application Information

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IPC IPC(8): C01B32/194
CPCC01B32/194
Inventor 朱佳平吴铛林若鹏杨晓琳方佳怡
Owner GUANGDONG UNIV OF PETROCHEMICAL TECH
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