Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing polyatomic self-doped graphene using natural porous and layered vegetables

A layered structure, polyatomic technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of graphene's small specific surface area, instability, toxicity, etc., to achieve good electrical conductivity and improve electrical conductivity. , Increase the effect of edge defects

Inactive Publication Date: 2018-06-12
WUHAN UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the reducing agent often used in this method is toxic, which makes the preparation process dangerous and unstable, and the graphene prepared by this reduction will have a reunion process, resulting in a small specific surface area of ​​graphene, usually lower than 900m 2 / g

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing polyatomic self-doped graphene using natural porous and layered vegetables
  • Method for preparing polyatomic self-doped graphene using natural porous and layered vegetables
  • Method for preparing polyatomic self-doped graphene using natural porous and layered vegetables

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] 1) Wash the fresh eggplant with water, peel it, cut it into pieces, put it in the prepared 0.5M KOH solution, and let it soak for 24 hours;

[0037] 2) The material obtained in step 1) is taken out and placed in a freeze-drying oven at -50°C and 10Pa for 36 hours to obtain a dry porous fluffy block structure;

[0038] 3) Weigh 10 g of the material obtained in step 2), place it in a tube furnace, raise the temperature at 5°C per minute to 800°C for 1 hour under an argon protective atmosphere, and then cool down;

[0039] 4) After the product obtained in step 3) was manually ground, it was placed in 250ml 0.5M H 2 SO 4 The solution was acid-washed in a constant temperature water bath at 80°C for 9 hours, then suction-filtered, and washed with water until neutral;

[0040] 5) Dry the sample obtained in step 4) in a vacuum oven at 80° C. to obtain graphene.

[0041] The specific surface area of ​​the prepared graphene can reach 1102m 2 g -1 , wherein the content of N ele...

Embodiment 2

[0050] 1) Wash the fresh cucumber with water, peel it, cut it into pieces, place it in the prepared 0.3M KOH solution, and allow it to soak for 48 hours;

[0051] 2) The material obtained in step 1) is taken out and placed in a freeze-drying oven at -20°C and 15Pa for 40 hours to obtain a dry porous fluffy block structure;

[0052] 3) Place the material obtained in step 2) in a tube furnace, raise the temperature from 7°C per minute to 700°C for 1.5 hours under a nitrogen protective atmosphere, and then cool down;

[0053] 4) After the product obtained in step 3) was manually ground, it was placed in 250 ml of 0.3M HCl solution and acid-washed at 80°C for 9 hours in a constant temperature water bath, then filtered with suction, and washed with water until neutral;

[0054] 5) Dry the sample obtained in step 4) in a vacuum oven at 60° C. to obtain graphene.

[0055] The specific surface area of ​​the prepared graphene can reach 1221m 2 g -1 , wherein the content of N element...

Embodiment 3

[0057] 1) Wash the fresh lettuce with water, peel it, cut it into pieces, place it in the prepared 0.6M KOH solution, and allow it to soak for 36 hours;

[0058] 2) The material obtained in step 1) is taken out and placed in a freeze-drying oven at -10°C and 10Pa for 65 hours to obtain a dry porous fluffy block structure;

[0059] 3) Weigh 10 g of the material obtained in step 2), place it in a tube furnace, raise the temperature from 6°C per minute to 700°C for 0.5h under an argon protective atmosphere, and then cool down;

[0060] 4) After the product obtained in step 3) was manually ground, it was placed in 200ml of 0.3M HCl solution and acid-washed at 70°C for 6 hours in a constant-temperature water bath, then suction-filtered, and washed with water until neutral;

[0061] 5) Dry the sample obtained in step 4) in a vacuum drying oven at 70° C. to obtain graphene.

[0062] The specific surface area of ​​the prepared graphene can reach 1233m 2 g -1 , wherein the content o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
tensile strengthaaaaaaaaaa
impedanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing polyatomic self-doped graphene by using natural porous and laminated vegetables. The method comprises the following steps: soaking treated vegetables in a KOH solution, performing freeze drying and heating activation, then performing acid pickling and drying to obtain the polyatomic self-doped graphene. According to the method, the vegetables are selected as raw materials which are rich in source and low in price, are reproducible, and meet requirements of sustainable development. The vegetables contain rich carbon sources, the C content after preparation of graphene can reach 80.0-95.0at.%, and as the vegetables contain rich amino acid and minerals, polyatomic self-doped multifunctional graphene can be formed to a certain extent, wherein the content of N is 0.5-6.0at.%, the content of P is 0.1-3.0at.%, the polyatomic doping of N, P and the like can open a band gap, regulate the conduction type, change an electronic structure of graphene, and effectively improve the free carrier density of the graphene, thereby improving the electrical conductivity and stability of the graphene, increasing edge defects of the graphene at the same time, exposing more active sites, and enabling the prepared graphene to have relatively high activity.

Description

technical field [0001] The invention relates to a method for preparing polyatomic self-doped graphene by using natural porous and layered vegetables, and belongs to the field of graphene material preparation. Background technique [0002] Graphene (G) is a two-dimensional (2D) lattice material formed by a flat single layer of carbon atoms tightly bound together, and is considered to be the building block for all other dimensional graphitic materials (wrapped into fullerenes, rolled into carbon nanotubes and stacks). The basic unit of integrated graphite). The thickness of graphene is only about 0.35nm, which is the thinnest two-dimensional material in the world. The stable regular hexagonal lattice structure endows graphene with many unique properties, such as the tensile strength is as high as 130Gpa, which is the highest among known materials; the carrier mobility is as high as 15000-25000cm 2 / Vs (10 times more than commercial silicon wafers); thermal conductivity of 50...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01B2204/04C01B2204/22C01B2204/32C01P2002/01C01P2002/82C01P2002/85C01P2004/03C01P2004/04
Inventor 木士春周煌张晨雨张建
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com