Double-channel lateral super-junction double-diffusion metal oxide wide-band-gap semiconductor field effect transistor and manufacturing method thereof
A field effect transistor, double diffusion technology, applied in semiconductor/solid state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing specific on-resistance and limiting the application of SJ-LDMOS devices
Inactive Publication Date: 2020-04-10
XIDIAN UNIV
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Problems solved by technology
With the increase of the drift region length of SJ-LDMOS devices, the specific on-resistance of the devices also increases rapidly, which limits the application of SJ-LDMOS devices in power integrated circuits
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[0051] Such as figure 1 , figure 2 As shown, the double-channel lateral superjunction double-diffused metal oxide wide-bandgap semiconductor field-effect transistor proposed in this embodiment includes:
[0052] The doping concentration is 1×10 13 cm -3 ~1×10 15 cm -3 A wide bandgap semiconductor substrate 10;
[0053] epitaxial layer 9 grown on the substrate;
[0054] The buffer layer 8 formed on the upper part of the epitaxial layer; the doping concentration of the buffer layer is 2e15-5e16cm -3 ;
[0055] The base region 12 and the super junction drift region 5 are respectively formed in the upper left and right regions of the buffer layer 8, wherein the super junction drift region 5 is composed of a number of N pillars 51 and P pillars 52 arranged alternately;
[0056] a planar gate insulating layer 4 and a planar gate electrode 3;
[0057] The two source regions 13 and the channel substrate contact 14 between them are formed on the side of the base region adjacent...
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Abstract
The invention provides a double-channel transverse super-junction double-diffusion metal oxide wide-band-gap semiconductor field effect transistor and a manufacturing method thereof. A device is basedon a wide band gap material, and a drift region is of a super-junction structure. The method comprises the steps of sequentially forming a first source region, a channel substrate contact, a second source region and a trench from one end, close to the super-junction drift region, of the upper part of a base region to the outer side; forming a planar gate insulating layer and a planar gate electrode on the surface of the device corresponding to the region of the first channel corresponding to the first source region; enabling the trench to penetrate through the base region and extend to a buffer layer below, forming a trench gate insulating layer on the bottom surface and the side surface of the trench, and filling the inner surface of the trench gate insulating layer with polycrystallinesilicon to form a trench gate electrode; and short-circuiting the surfaces of the first source region, the channel substrate contact and the second source region to form a source electrode. Accordingto the present invention, a double-gate structure is formed by the planar gate and the trench gate, so that the double-channel conduction of an electronic current is realized, and the conduction resistance of the device is effectively reduced.
Description
technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a lateral superjunction double-diffused metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] Wide bandgap semiconductor materials have the characteristics of large band gap, high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity, so they have very broad application prospects in the field of high-power, high-temperature and high-frequency power electronics. Lateral power devices have the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-subconduction, small power drive, and high switching speed, and are widely used in PIC (Power Integrated Circuit). At present, the lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) with a wide bandgap semiconductor material (typica...
Claims
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IPC IPC(8): H01L29/78H01L29/08H01L29/10H01L21/336H01L29/06
CPCH01L29/0634H01L29/0886H01L29/1037H01L29/66704H01L29/7823H01L29/7825H01L29/7831
Inventor 曹震于正洋赵嘉璇邵奕霖邓世超焦李成
Owner XIDIAN UNIV