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Co/CoO nano composite film with zero-field cooling exchange bias effect as well as preparation method and application of Co/CoO nano composite film

A nano-composite, bias effect technology, applied in the manufacture/processing of electromagnetic devices, magnetic field-controlled resistors, material selection, etc., can solve problems such as inconvenience, and achieve the effect of a simple preparation method

Inactive Publication Date: 2020-04-10
扬州旭磁智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, whether it is a core-shell nanoparticle or a double-layer or multi-layer film, the Co / CoO composite system requires an external cooling field to exhibit the exchange bias effect, which brings great inconvenience to the practical application of the material.

Method used

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  • Co/CoO nano composite film with zero-field cooling exchange bias effect as well as preparation method and application of Co/CoO nano composite film
  • Co/CoO nano composite film with zero-field cooling exchange bias effect as well as preparation method and application of Co/CoO nano composite film
  • Co/CoO nano composite film with zero-field cooling exchange bias effect as well as preparation method and application of Co/CoO nano composite film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] This embodiment provides a method for preparing a Co / CoO nanocomposite film, including the following steps:

[0048] Step S1: Select a single crystal Si substrate with a thickness of 0.5mm and perform pretreatment, that is, use water, acetone and ethanol to perform ultrasonic cleaning on the single crystal Si substrate in sequence, cycle three times, and finally blow dry with a nitrogen gun.

[0049] Step S2: Fix the single crystal Si substrate in the magnetron sputtering apparatus, fix the single crystal Si substrate on the sample holder, put it into the sample chamber of the magnetron sputtering apparatus, close the door of the sample chamber, and respectively Vacuum the sampling chamber and the sputtering chamber. When the vacuum difference between the sampling chamber and the sputtering chamber is less than 1 Pa, open the gate valve connecting the sampling chamber and the sputtering chamber, and send the sample carrier from the sampling chamber to to the sputtering ...

Embodiment 2

[0055] The difference between embodiment 2 and embodiment 1 is that the sputtering time in step S3 is 36s, so that a 3.6nm thick Co / CoO nanoparticle composite film is formed on the single crystal Si substrate.

Embodiment 3

[0057] The difference between embodiment 3 and embodiment 1 is that the sputtering time in step S3 is 1080 s, so that a 108 nm thick Co / CoO nanoparticle composite film is formed on the single crystal Si substrate.

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Abstract

The invention belongs to the technical field of magnetic materials, and provides a Co / CoO nano composite film with a zero-field cooling exchange bias effect and a preparation method and application thereof. The invention discloses a Co / CoO nano composite film with a zero-field cooling exchange bias effect. The Co / CoO nano-particle composite film comprises a substrate, a Co / CoO nano-particle composite film body and a protective layer which are stacked from bottom to top, the particle size of the Co / CoO nano-particle composite film body ranges from 3 nm to 8 nm, and the thickness of the Co / CoO nano-particle composite film body ranges from 3.6 nm to 270 nm. The Co / CoO nano composite film with the zero-field cooling exchange bias effect is prepared by adopting a direct-current magnetron sputtering technology, and the film with a Co / CoO composite nanoparticle structure is obtained by controlling oxygen partial pressure and the thickness of the film.

Description

technical field [0001] The invention relates to the technical field of magnetic materials, in particular to a Co / CoO nanocomposite film with zero-field cooling exchange bias effect and a preparation method thereof. Background technique [0002] Since the giant magnetoresistance effect was discovered, magnetic materials have been widely used in today's science and technology. In particular, the development of spintronic devices has driven the development of national defense economy and social economy. Spintronic devices mainly include spin valves and magnetic tunnel junctions, and have been widely used in the fields of magnetic read heads, magnetic random access memories, and magnetic sensors. With the improvement of magnetic recording density and the reduction of device size, the size of magnetic grains for recording information in magnetic recording media is correspondingly smaller and smaller. When the size of the magnetic particles is reduced below the critical size, th...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/08H01L43/12
CPCH10N50/85H10N50/10H10N50/01
Inventor 杨森田方华李叶蓓张垠周超王宇
Owner 扬州旭磁智能科技有限公司
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